Build Biasing Circuit Amplifier ADE-208-572B(Z) 3rd. Edition Mar.

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Build Biasing Circuit Amplifier ADE-208-572B(Z) 3rd. Edition Mar.

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BB302M
Build Biasing Circuit Amplifier
ADE-208-572B(Z) 3rd. Edition Mar. 2001 Features
Build Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Build absorbing diode. Withstand 240V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
MPAK-4
Source Gate1 Gate2 Drain
Notes:
Marking BB302M individual type number HITACHI BBFET.
BB302M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Symbol VG1S VG2S Tstg Ratings Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature +150 Unit
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate1 source breakdown voltage Gate2 source breakdown voltage Gate1 source cutoff current G1SS Gate2 source cutoff current G2SS Gate1 source cutoff voltage VG1S(off) Gate2 source cutoff voltage VG2S(off) Drain current Forward transfer admittance D(op) |yfs| +100 ±100 Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Unit Test Conditions 200µA VG1S VG2S +10µA VG2S ±10µA VG1S VG1S VG2S VG2S VG1S VG2S 100µA VG1S 100µA VG2S 120k VG2S 120k, 1kHz VG2S =6V, 120k 1MHz VG2S 120k 200MHz
Input capacitance Output capacitance
0.017
0.04
Reverse transfer capacitance Power gain Noise figure
BB302M
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss, Gate Gate
Drain
Source
Application Circuit VAGC BBFET Output
Input
BB302M
Maximum Channel Power Dissipation Curve (mW) (mA) Typical Output Characteristics
Channel Power Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
Drain Current Gate2 Source Voltage
Drain Current Gate1 Voltage (mA)
(mA)
Drain Current
Drain Current
Gate2 Source Voltage VG2S Gate1 Voltage
BB302M
Drain Current Gate1 Voltege (mA) (mA) Drain Current Gate1 Voltege
Drain Current
Drain Current
Gate1 Voltage
Gate1 Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
Gate1 Voltage
Gate1 Voltage
BB302M
Forward Transfer Admittance Gate1 Voltage Power Gain Gate Resistance Power Gain (dB) Gate1 Voltage 1000 Gate Resistance
Forward Transfer Admittance (mS)
Noise Figure Gate Resistance Power Gain (dB)
Power Gain Drain Current
Noise Figure (dB)
variable
1000
Gate Resistance
Drain Current (mA)
BB302M
Noise Figure Drain Current variable 1000 Drain Current Gate Resistance
Drain Current (mA)
Noise Figure (dB)
Drain Current (mA)
Gate Resistance
Gain Reduction Gate2 Source Voltage Gain Reduction (dB) Input Capacitance Ciss (pF) Gate2 Source Voltage
Input Capacitance Gate2 Source Voltage
Gate2 Source Voltage
BB302M
Parameter Frequency
-1.5 -120° -90° -60° 180° 150°
Parameter Frequency
120°
Scale: div.
-150°
-30°
Test Condition 1000 step)
Test Condition 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.01 div.
150°
180°
-150° -30° -120° -90° -60° -1.5
Test Condition 1000 step)
Test Condition 1000 step)
BB302M
Sparameter (VDS VG2S 120k,
(MHz) 1000 0.988 0.986 0.979 0.964 0.948 0.939 0.920 0.904 0.885 0.864 0.848 0.826 0.808 0.789 0.773 0.755 0.735 0.721 0.703 0.677 -5.2 -10.4 -16.0 -21.5 -26.9 -32.0 -37.3 -42.3 -47.1 -51.7 -56.5 -60.9 -65.0 -69.4 -73.7 -77.9 -82.1 -86.3 -90.7 -93.9 2.13 2.13 2.12 2.08 2.04 2.00 1.95 1.91 1.86 1.81 1.76 1.70 1.66 1.61 1.56 1.51 1.47 1.42 1.39 1.34 174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 81.3 76.9 72.4 0.00052 0.00087 0.00156 0.00226 0.00254 0.00339 0.00335 0.00338 0.00351 0.00347 0.00355 0.00300 0.00289 0.00246 0.00211 0.00166 0.00165 0.00123 0.00176 0.00204 90.0 72.5 79.4 78.4 71.0 72.0 59.0 66.3 62.2 56.6 61.5 61.4 51.1 57.6 70.0 77.5 114.5 114.5 145.8 164.0 0.985 0.993 0.992 0.990 0.987 0.985 0.982 0.978 0.974 0.970 0.966 0.961 0.957 0.952 0.947 0.943 0.937 0.933 0.927 0.923 -1.3 -3.6 -5.5 -7.5 -9.6 -11.4 -13.3 -15.3 -17.1 -18.9 -21.0 -22.7 -24.5 -26.6 -28.3 -30.2 -32.2 -34.1 -35.9 -37.9
BB302M
Package Dimensions January, 2001
Unit:
2.95 0.95 0.95
0.05
0.05
0.65
0.16 0.06
0.15
0.95
0.85
0.65
0.05
0.05
Hitachi Code JEDEC EIAJ Mass (reference value)
MPAK-4 Conforms 0.013
BB302M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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Build Biasing Circuit Amplifier ADE-208-572B(Z) 3rd. Edition Mar.

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