Noise, Matched Dual Transistor MAT03 CONNECTION TO-78 Suffix)

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Noise, Matched Dual Transistor MAT03 CONNECTION TO-78 Suffix)

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FEATURES Dual Matched Transistor Offset Voltage: Noise: nV/Hz High Gain: High Gain Bandwidth: Tight Gain Matching: Excellent Logarithmic Conformance: Available Form
Noise, Matched Dual Transistor MAT03
CONNECTION TO-78 Suffix)
GENERAL DESCRIPTION
MAT03 dual monolithic transistor offers excellent parametric matching high frequency performance. noise characteristics nV/Hz kHz), high bandwidth (190 typical), offset voltage (100 max), makes MAT03 excellent choice demanding preamplifier applications. Tight current gain matching mismatch) high current gain (100 min), over wide range collector current, makes MAT03 excellent choice current mirrors. value bulk resistance (typically also makes MAT03 ideal component applications requiring accurate logarithmic conformance.
Each transistor individually tested data sheet specifications. Device performance guaranteed 25°C over extended industrial military temperature ranges. insure longterm stability matching parameters, internal protection diodes across base-emitter junction clamp reverse baseemitter junction potential. This prevents base-emitter breakdown condition which result degradation gain matching performance excessive breakdown current.
REV.
Information furnished Analog Devices believed accurate reliable. However, responsibility assumed Analog Devices use, infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Analog Devices.
Technology Way, P.O. 9106, Norwood, 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
MAT03-SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Current Gain
unless otherwise noted.)
MAT03A MAT03E 0.75 0.75 0.025 MAT03F 0.75 0.75 0.025 Units
Symbol
Conditions
Current Gain Matching Offset Voltage3 Offset Voltage Change Collector Voltage Offset Voltage Change Collector Current Bulk Resistance Offset Current Collector-Base Leakage Current Noise Voltage Density
DhFE DVOS/DVCB DVOS/DIC ICB0
µA,VCB VCB1 VCB2 VMAX
0.75 0.75
nV/÷ nV/÷ nV/÷ nV/÷
Collector Saturation Voltage
VCE(SAT)
0.025
ELECTRICAL CHARACTERISTICS +125 unless otherwise noted.)
Parameter Current Gain
Symbol
Conditions
MAT03A
Units
Offset Voltage Offset Voltage Drift5 Offset Current Breakdown Voltage
TCVOS BVCEO
µV/°C
ELECTRICAL CHARACTERISTICS unless otherwise noted.)
Parameter
Symbol
Conditions
MAT03E
MAT03F
Units
Current Gain
Offset Voltage Offset Voltage Drift5 Offset Current Breakdown Voltage
TCVOS BVCEO
µV/°C
NOTES Current gain measured collector-base voltages swept from indicated collector current. Typicals measured
2Current 3Offset
gain matching (hFE) defined
(min
voltage defined VBE1 VBE2, where differential voltage IC2: VBE1 VBE2 Sample tested. Noise tested specified equivalent input voltage each transistor. Guaranteed test (TCVOS VOS/T VBE) where 298°K 25°C. Specifications subject change without notice.
REV.
MAT03 WAFER TEST LIMITS unless otherwise noted.)
Parameter Symbol Conditions MAT03N Limits Units
Breakdown Voltage Offset Voltage Current Gain Current Gain Match Offset Voltage Change Offset Voltage Change Collector Current Bulk Resistance Collector Saturation Voltage
BVCEO VOS/VCB VOS/IC (SAT)
VCB1 VCB2
0.75
NOTE: Electrical tests performed wafer probe limits shown. variations assembly methods normal yield loss, yield after packaging guaranteed standard product dice. Consult factory negotiate specifications based dice qualification through sample assembly testing.
DICE CHARACTERISTICS
COLLECTOR BASE EMITTER COLLECTOR BASE EMITTER SUBSTRATE CONNECTED FLOATED
ABSOLUTE MAXIMUM RATINGS
ORDERING GUIDE1
Model
Temperature Range -55°C +125°C -40°C +85°C -40°C +85°C
Package Option TO-78 TO-78 TO-78
Collector-Base Voltage (BVCBO) Collector-Emitter Voltage (BVCEO) Collector-Collector Voltage (BVCC) Emitter-Emitter Voltage (BVEE) Collector Current (IC) Emitter Current (IE) Total Power Dissipation Ambient Temperature 70°C2 Operating Temperature Range MAT03A -55°C +125°C MAT03E/F -40°C +85°C Operating Junction Temperature -55°C +150°C Storage Temperature -65°C +150°C Lead Temperature (Soldering, sec) +300°C Junction Temperature -65°C +150°C
NOTES Absolute maximum ratings apply both DICE packaged devices. Rating applies TO-78 using heat sink, LCC; devices free only. TO-78, derate linearly mW/°C above 70°C ambient temperature; LCC, derate mW/°C.
MAT03AH2 MAT03EH MAT03FH
NOTES Burn-in available industrial temperature range parts. devices processed total compliance MIL-STD-883, add/883 after part number. Consult factory data sheet.
CAUTION (electrostatic discharge) sensitive device. Electrostatic charges high 4000 readily accumulate human body test equipment discharge without detection. Although MAT03 features proprietary protection circuitry, permanent damage occur devices subjected high energy electrostatic discharges. Therefore, proper precautions recommended avoid performance degradation loss functionality.
WARNING!
SENSITIVE DEVICE
REV.
MAT03
Figure Current Gain Collector Current
Figure Current Gain Temperature
Figure Gain Bandwidth Collector Current
Figure Base-Emitter Voltage Collector Current
Figure Small-Signal Input Resistance (hie) Collector Current
Figure Small Signal Output Conductance (hoe) Collector Current
REV.
MAT03
Figure Saturation Voltage Collector Current
Figure Noise Voltage Density Frequency
Figure Noise Voltage Density
Figure Total Noise Collector Current
Figure Collector-Base Capacitance
REV.
MAT03
Figure SPICE SABER Model
APPLICATIONS INFORMATION
MAT03 MODELS
MAT03 NOISE MEASUREMENT
MAT03 model (Figure includes parasitic diodes through internal protection diodes which prevent zenering base-emitter junctions. analysis programs, SPICE SABER, primarily used evaluating functional performance systems. models provided only utilizing these simulation programs.
resistive components (Johnson noise, 4kTBR, 0.13R nV/Hz, where semiconductor junctions (Shot noise, caused current flowing through junction, produces voltage noise series impedances such transistorcollector load resistors, 0.566 pA/Hz where contribute system input noise. Figure illustrates technique measuring equivalent input noise voltage MAT03. stage current used
Figure MAT03 Voltage Noise Measurement Circuit
REV.
MAT03
bias each side differential pair. collector resistors noise contribution insignificant compared voltage noise MAT03. Since noise signal path referred back input, this voltage noise attenuated gain circuit. Consequently, noise contribution collector load resistors only 0.048 nV/Hz. This considerably less than typical nV/Hz input noise voltage MAT03 transistor. noise contribution OP27 gain stages also negligible gain signal path. stages amplify input referred noise transistors increase signal strength allow noise spectral density (ein 10000) measured with spectrum analyzer. And, since assume equal noise contributions from each transistor MAT03, output divided determine single transistor's input noise. currents cause small temperature changes that appear frequency noise. eliminate this noise source, measurement circuit must thermally isolated. Effects extraneous noise sources must also eliminated totally shielding circuit.
SUPER NOISE AMPLIFIER
circuit Figure super noise amplifier with equivalent input voltage noise 0.32 nV/Hz. paralleling three MAT03 matched pairs, further reduction amplifier noise attained reduction base spreading resistance factor consequently noise Additionally, shot noise contribution reduced maintaining high collector current mA/device) which reduces dynamic emitter resistance decreases voltage noise. voltage noise inversely proportional square root stage current, current noise increases proportionally square root stage current. Accordingly, this amplifier capitalizes voltage noise reduction techniques expense increasing current noise. However, high current noise usually important when dealing with impedance sources.
Figure 14a. Super Noise Amplifier
REV.
MAT03
This amplifier exhibits excellent full power performance, 0.08% into load, making suitable exacting audio applications (see Figure 14b). silicon transistor predictable constant percent) over wide temperature range. voltage difference, approximately dropped across resistor which produces temperature stabilized emitter current.
CURRENT SOURCES
fundamental requirement accurate current mirrors active load stages matched transistor components. excellent matching (the voltage difference between VBE's required equalize collector current) gain matching, MAT03 used implement variety standard current mirrors that source current into load such amplifier stage. advantages current loads amplifiers versus resistors increase voltage gain higher impedances, larger signal range, many applications wider signal bandwidth. Figure illustrates cascode current mirror consisting MAT03 transistor pairs.
Figure 14b. Super Noise Amplifier-Total Harmonic Distortion
NOISE MICROPHONE PREAMPLIFIER
Figure shows microphone preamplifier that consists MAT03 noise amp. input stage operates relatively high quiescent current side, which reduces MAT03 transistor's voltage noise. corner less than Total harmonic distortion under 0.005% signal from kHz. preamp gain 100, modified varying (VOUT/VIN R5/R6 total input stage emitter current provided constant current using forward voltage GaAsP reference. difference between this voltage
cascode current source common base transistor series with output which causes increase output impedance current source since stays relatively constant. High frequency characteristics improved reduction Miller capacitance. small-signal output impedance determined consulting "hOF Collector Current" typical graph. Typical output impedance levels approach performance perfect current source. Considering typical collector current have: roQ3 µMHOS
Figure Noise Microphone Preamplifier
REV.
MAT03
series operate same current levels total output impedance
roQ3 (160)(1
Since buffers both transistors MAT03, maintain same collector current. form Baker clamp which prevents from turning off, thereby improving switching speed current mirror. feedback serves increase output impedance improves accuracy reducing base-width modulation which occurs with varying collector-emitter voltages. Accuracy linearity performance current pump summarized Figure
Figure Cascode Current Source Figure 17a. Current Matching Circuit
CURRENT MATCHING
objective current source mirror design generation currents that either matched must maintain constant ratio. However, mismatch base-emitter voltages cause output current errors. Consider example Figure 17a. resistors transistors equal collector voltages same, collector currents will match precisely. Investigating current-matching errors resulting from nonzero VOS, define current error between transistors. Graph describes relationship current matching errors versus offset voltage specified average current Note that since relative error between currents exponentially proportional offset voltage, tight matching required design high accuracy current sources. example, offset voltage collector current, current matching error would 20%. Additionally, temperature effects such offset drift µV/°C VOS) will degrade performance well matched.
DIGITALLY PROGRAMMABLE BIPOLAR CURRENT PUMP
Figure 17b. Current Matching Accuracy Offset Voltage
circuit Figure digitally programmable current pump. current pump incorporates DAC08, fast Wilson current source using MAT03. Examining Figure DAC08 full-scale range that bipolar current operation achieved. Wilson current mirror maintains linearity within range 8-bit DAC08 mA/256 15.6 resolution) seen Figure negative feedback path established regulates collector current that matches reference current programmed DAC08. Collector-emitter voltages across both matched with Q3's collector-emitter voltage remaining constant, independent voltage across current source output.
Figure Digitally Programmable Bipolar Current Pump
REV.
MAT03
full-scale output DAC08, IOUT, linear function IREF
IREF, IOUT IOUT IREF
current mirror output IOUT IOUT that IREF IOUT 1.992
Input Code 1.992
DIGITAL CURRENT PUMP CODING
Figure Digitally Programmable Current Pump-INL Error Digital Code
Digital Input FULL RANGE HALF-RANGE ZERO-SCALE 1111 1111 1000 0000 0000 0000
Output Current 1.992 0.008 -1.992
-10-
REV.
MAT03
OUTLINE DIMENSIONS
Dimensions shown inches (mm).
TO-78 Metal
REFERENCE PLANE 0.185 (4.70) 0.165 (4.19) 0.750 (19.05) 0.500 (12.70) 0.250 (6.35) 0.050 (1.27) 0.100 (2.54) 0.160 (4.06) 0.110 (2.79) 0.200 (5.08) 0.019 (0.48) 0.016 (0.41) 0.040 (1.02) 0.045 (1.14) 0.010 (0.25) 0.021 (0.53) 0.016 (0.41) BASE SEATING PLANE 0.100 (2.54) 0.034 (0.86) 0.027 (0.69)
0.370 (9.40) 0.335 (8.51)
0.335 (8.51) 0.305 (7.75)
0.045 (1.14) 0.027 (0.69)
REV.
-11-
-12-
000000000
PRINTED U.S.A.

Noise, Matched Dual Transistor MAT03 CONNECTION TO-78 Suffix)

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