ADE-208-1285 1st. Edition Mar. 2001 Application Features on-

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ADE-208-1285 1st. Edition Mar. 2001 Application Features on-

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2SK1405
ADE-208-1285 1st. Edition Mar. 2001 Application
Features
on-resistance High speed switching drive current Built-in fast diode (trr Suitable motor control, switching regulator, DC-DC converter
Outline
TO-3PFM
Gate Drain Source
2SK1405
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C Symbol VDSS VGSS D(pulse)* Pch* Tstg
Ratings +150
Unit
2SK1405
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS 0.35 3150 0.50 diF/dt A/µs 3.75 Unit Test conditions ±100
Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
2SK1405
Power Temperature Derating Channel Dissipation Drain Current 0.03 0.05 Case Temperature (°C) 1,000 Drain Source Voltage 25°C
Maximum Safe Operation Area
Typical Output Characteristics Drain Current Pulse Test Drain Current
Typical Transfer Characteristics Pulse Test
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
2SK1405
Drain Source Saturation Voltage (on) Drain Source Saturation Voltage Gate Source Voltage Pulse Test Static Drain Source State Resistance (on) Pulse Test Static Drain Source State Resistance Drain Current
Gate Source Voltage
0.05 Drain Current
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Pulse Test Forward Transfer Admittance
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C
Pulse Test Drain Current
Case Temperature (°C)
2SK1405
Body Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) 10,000 Ciss Capacitance (pF) 1,000 Coss Typical Capacitance Drain Source Voltage
di/dt A/µs, 25°C Pulse Test Reverse Drain Current
Crss
Drain Source Voltage
Dynamic Input Characteristics 1,000 Drain Source Voltage Gate Source Voltage
Switching Characteristics (off) Switching Time (ns) (on)
duty Drain Current
Gate Charge (nc)
2SK1405
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
ch-c ch-c ch-c 2.08°C/W, 25°C
0.05
0.03 0.01
0.02 0.01
Pulse Width
Switching Time Test Circuit Monitor
Waveforms Vout Monitor
D.U.T.
Vout (on)
(off)
2SK1405
Package Dimensions
January, 2001
Unit:
15.6
19.9
0.66 5.45
21.0
0.86
0.86
5.45
Hitachi Code JEDEC EIAJ Mass (reference value)
TO-3PFM
2SK1405
2SK1405
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica Europe Asia Japan
http://sicapac.hitachi-asia.com
Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan.
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ADE-208-1285 1st. Edition Mar. 2001 Application Features on-

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