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ADE-208-1283 1st. Edition Mar. 2001 Application Features on-
Top Searches for this datasheet2SK1403, 2SK1403A ADE-208-1283 1st. Edition Mar. 2001 Application Features on-resistance High speed switching drive current secondary breakdown Suitable switching regulator DC-DC converter Outline TO-3P Gate Drain (Flange) Source 2SK1403, 2SK1403A Absolute Maximum Ratings 25°C) Item Drain source voltage 2SK1403 2SK1403A Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C VGSS D(pulse)* Pch* Tstg Symbol VDSS Ratings +150 Unit 2SK1403, 2SK1403A Electrical Characteristics 25°C) Item Drain source breakdown voltage K1403 K1403A V(BR)GSS Symbol V(BR)DSS ±100 VGS(off) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) 1180 0.95 diF/dt A/µs Unit Test conditions Gate source breakdown voltage Gate source leak current Zero gate voltage drain current K1403 K1403A Gate source cutoff voltage Static drain source K1403 state resistance K1403A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test 2SK1403, 2SK1403A Power Temperature Derating Channel Dissipation Drain Current Maximum Safe Operation Area 0.05 25°C 2SK1403 2SK1403A Case Temperature (°C) 1,000 Drain Source Voltage Typical Output Characteristics Drain Current Pulse Test Drain Current Typical Transfer Characteristics Pulse Test Drain Source Voltage 75°C 25°C -25°C Gate Source Voltage 2SK1403, 2SK1403A Drain Source Saturation Voltage (on) Drain Source Saturation Voltage Gate Source Voltage Pulse Test Static Drain Source State Resistance Drain Current Static Drain Source State Resistance (on) Pulse Test Gate Source Voltage 0.05 Drain Current Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Forward Transfer Admittance Pulse Test Forward Transfer Admittance Drain Current Pulse Test 75°C 25°C -25°C Case Temperature (°C) Drain Current 2SK1403, 2SK1403A Body Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) 5,000 Ciss Capacitance (pF) 1,000 Typical Capacitance Drain Source Voltage di/dt A/µs, 25°C Reverse Drain Current Coss Crss Drain Source Voltage Dynamic Input Characteristics 1,000 Drain Source Voltage Gate Charge (nc) Gate Source Voltage Switching Characteristics Switching Time (ns) (on) duty (off) Drain Current 2SK1403, 2SK1403A Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test Source Drain Voltage Normalized Transient Thermal Impedance Normalized Transient Thermal Impedance Pulse Width 25°C 0.05 ch-c ch-c ch-c 1.25°C/W, 25°C 0.02 0.03 0.01 0.01 Pulse Pulse Width Switching Time Test Circuit Monitor Vout Monitor D.U.T. Vout (on) Waveforms (off) 2SK1403, 2SK1403A Package Dimensions January, 2001 15.6 Unit: 14.9 19.9 18.0 5.45 5.45 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms 2SK1403, 2SK1403A Cautions Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Hitachi, Ltd. Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica Europe Asia Japan http://sicapac.hitachi-asia.com Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk further information write Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan. 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