Mbit (1Mb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPERA

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Mbit (1Mb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPERA

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M27W801
Mbit (1Mb Voltage EPROM EPROM
2.7V 3.6V SUPPLY VOLTAGE READ OPERATION ACCESS TIME: 80ns 3.0V 3.6V 100ns 2.7V 3.6V
COMPATIBLE with M27C801 POWER CONSUMPTION: 15µA Standby Current 15mA Active Current 5MHz
FDIP32W
PDIP32
PROGRAMMING TIME 50µs/byte HIGH RELIABILITY CMOS TECHNOLOGY 2,000V Protection 200mA Latchup Protection Immunity
PLCC32 TSOP32
ELECTRONIC SIGNATURE Manufacturer Code: Device Code: Figure Logic Diagram
DESCRIPTION M27W801 voltage Mbit EPROM offered ranges (ultra violet erase) (one time programmable). ideally suited microprocessor systems requiring large data program storage organized 1,048,576 bits. M27W801 operates read mode with supply voltage 2.7V 85°C temperature range. decrease operating power allows either reduction size battery increase time between battery recharges. FDIP32W (window ceramic frit-seal package) transparent lids which allow user expose chip ultraviolet light erase pattern. pattern then written device following programming procedure. applications where content programmed only time erasure required, M27W801 offered PDIP32, PLCC32 TSOP32 packages.
A0-A19
Q0-Q7
GVPP
M27W801
AI02363
April 2000
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M27W801
Figure Connections Figure PLCC Connection
M27W801
AI02671
GVPP
GVPP M27W801
AI02365
Figure TSOP Connection
Table Signal NameA0-A19 Q0-Q7 Address Inputs Data Outputs Chip Enable Output Enable Program Supply Supply Voltage Ground
M27W801 (Normal)
AI02366
GVPP
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M27W801
Table Absolute Maximum Ratings
Symbol TBIAS TSTG Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input Output Voltage (except Supply Voltage Voltage Program Supply Voltage Value 13.5 Unit
Note: Except rating "Operating Temperature Range", stresses above those listed Table "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only operation device these other conditions above those indicated Operating sections this specification implied. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Refer also STMicroelectronics SURE Program other relevant quality documents. Minimum voltage Input Output -0.5V with possible undershoot -2.0V period less than 20ns. Maximum voltage Output +0.5V with possible overshoot period less than 20ns. Depends range.
Table Operating ModeMode Read Output Disable Program Program Inhibit Standby Electronic Signature
Note: VIL, 0.5V.
Pulse
GVPP
Q7-Q0 Data Hi-Z Data Hi-Z Hi-Z Code
Table Electronic Signature
Identifier Manufacturer's Code Device Code Data
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M27W801
Table Measurement ConditionHigh Speed Input Rise Fall Times Input Pulse Voltages Input Output Timing Ref. Voltages 10ns 1.5V Standard 20ns (10% 90%) 0.4V 2.4V 0.8V
Figure Testing Input Output Waveform
Figure Testing Load Circuit
1.3V
High Speed 1.5V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
0.4V
30pF High Speed 100pF Standard includes capacitance
AI01823B
Table Capacitance MHz)
Symbol COUT Parameter Input Capacitance Output Capacitance Test Condition VOUT Unit
Note: Sampled only, 100% tested.
DEVICE OPERATION operating modes M27W801 listed Operating Modes table. single power supply required read mode. inputs levels except GVPP Electronic Signature Margin Mode Reset. Read Mode M27W801 control functions, both which must logically active order obtain data outputs. Chip Enable power control should used device selection. Output Enable output control should used gate data output pins, independent device selection. Assuming that addresses stable, address access time
(tAVQV) equal delay from output (tELQV). Data available output after delay GLQV from falling edge assuming that been addresses have been stable least tAVQV-tGLQV. Standby Mode M27W801 standby mode which reduces supply current from 15mA 20µA with voltage operation 3.6V, Read Mode Characteristics table details. M27W801 placed standby mode applying CMOS high signal input. When standby mode, outputs high impedance state, independent GVPP input.
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M27W801
Table Read Mode Characteristics 2.7V 3.6V; VCC)
Symbol ICC1 ICC2 Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) Supply Current (Standby) CMOS Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage 2.1mA -1mA Test Condition VOUT VIL, GVPP VIL, IOUT 0mA, 5MHz, 3.6V 0.2V, 3.6V -0.6 Unit
Note: must applied simultaneously with before removed simultaneously after Maximum voltage Output +0.5V.
Line Output Control Because EPROMs usually used larger memory arrays, product features line control function which accommodates multiple memory connection. line control function allows: lowest possible memory power dissipation, complete assurance that output contention will occur. most efficient these control lines, should decoded used primary device selecting function, while should made common connection devices array connected READ line from system control bus. This ensures that deselected memory devices their power standby mode that output pins only active when data required from particular memory device.
System Considerations power switching characteristics Advanced CMOS EPROMs require careful decoupling devices. supply current, three segments that interest system designer: standby current level, active current level, transient current peaks that produced falling rising edges magnitude transient current peaks dependent capacitive inductive loading device output. associated transient voltage peaks suppressed complying with line output control properly selected decoupling capacitors. recommended that 0.1µF ceramic capacitor used every device between VSS. This should high frequency capacitor inherent inductance should placed close device possible. addition, 4.7µF bulk electrolytic capacitor should used between every eight devices. bulk capacitor should located near power supply connection point. purpose bulk capacitor overcome voltage drop caused inductive effects traces.
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M27W801
Table Read Mode Characteristics 2.7V 3.6V; VCC)
M27W801 Test Condition tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tACC Address Valid Output Valid Chip Enable Output Valid Output Enable Output Valid Chip Enable High Output Hi-Z Output Enable High Output Hi-Z Address Transition Output Transition VIL, VIL, -100 -120 (-150/-200)
Symbol
Parameter
Unit
3.0V 3.6V 2.7V 3.6V 2.7V 3.6V
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested. Speed obtained with High Speed measurement conditions.
Figure Read Mode Waveform
A0-A19
VALID tAVQV tAXQX
VALID
tGLQV tELQV Q0-Q7 tGHQZ Hi-Z tEHQZ
AI01583B
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M27W801
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol Parameter Input Leakage Current Supply Current Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage Voltage 2.1mA -1mA 11.5 12.5 -0.3 Test Conditio Unit
Note: must applied simultaneously with before removed simultaneously after
Table MARGIN MODE Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol tA9HVPH tVPHEL tA10HEH tA10LEH tEXA10X EXVPX tVPXA9X tVPS tAS10 tAS10 tAH10 tVPH tAH9 Parameter High High High Chip Enable VA10 High Chip Enable High (Set) VA10 Chip Enable High (Reset) Chip Enable Transition VA10 Transition Chip Enable Transition Transition Transition Transition Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after
Programming M27W801 been designed fully compatible with M27C801 same electronic signature. result M27W801 programmed M27C801 same programming equipment applying 12.75V 6.25V same PRESTO algorithm. When delivered (and after each `1's erasure EPROM), bits M27W801 state. Data introduced selectively programming "0"s into desired locations.Al-
though only will programmed, both present data word. only change exposure ultraviolet light EPROM). M27W801 programming mode when input 12.75V pulsed VIL. data programmed applied bits parallel data output pins. levels required address data inputs TTL. specified 6.25V 0.25V.
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M27W801
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol tAVEL tQVEL tVCHEL tVPHEL tVPLVPH tELEH tEHQX tEHVPX tVPLEL tELQV tEHQZ tEHAX tVCS tOES tPRT tOEH tDFP Parameter Address Valid Chip Enable Input Valid Chip Enable High Chip Enable High Chip Enable Rise Time Chip Enable Program Pulse Width (Initial) Chip Enable High Input Transition Chip Enable High Transition Chip Enable Chip Enable Output Valid Chip Enable High Output Hi-Z Chip Enable High Address Transition Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested.
Figure MARGIN MODE Waveform
tA9HVPH GVPP tVPHEL tA10HEH tEXA10X tEXVPX tVPXA9X
Reset tA10LEH
AI00736B
Note: High level High level 12V.
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M27W801
Figure Programming Verify Modes Waveform
A0-A19 tAVEL Q0-Q7 tQVEL tVCHEL GVPP tVPHEL DATA
VALID tEHAX DATA tEHQX tEHQZ
tEHVPX
tELQV
tVPLEL
tELEH
PROGRAM
VERIFY
AI01270
Figure Programming Flowchart
6.25V, 12.75V MARGIN MODE
50µs Pulse VERIFY Last Addr Addr
FAIL
RESET MARGIN MODE CHECK BYTES 1st: 2nd: 2.7V
AI01271C
PRESTO Programming Algorithm PRESTO Programming Algorithm allows whole array programmed with guaranteed margin, typical time 52.5 seconds. This achieved with STMicroelectronics M27W801 several design innovations improve programming efficiency provide adequate margin reliability. Before starting programming internal MARGIN MODE circuit must order guarantee that each cell programmed with enough margin. Then sequence 50µs program pulses applied each byte until correct verify occurs (see Figure overprogram pulses applied since verify MARGIN MODE much higher than 3.6V, provides necessary margin. Program Inhibit Programming multiple M27W801s parallel with different data also easily accomplished. Except like inputs including GVPP parallel M27W801 common. level pulse applied M27W801's input, with 12.75V, will program that M27W801. high level input inhibits other M27W801s from being programmed. Program Verify verify (read) should performed programmed bits determine that they were correctly programmed. verify accomplished with Data should verified with tELQV after falling edge
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M27W801
On-Board Programming M27W801 directly programmed application circuit. relevant Application Note AN620. Electronic Signature Electronic Signature (ES) mode allows reading binary code from EPROM that will identify manufacturer type. This mode intended programming equipment automatically match device programmed with corresponding programming algorithm. mode functional 25°C ambient temperature range that required when programming M27W801. activate mode, programming equipment must force 11.5V 12.5V address line M27W801. identifier bytes then sequenced from device outputs toggling address line from VIH. other address lines must held during Electronic Signature mode. Byte VIL) represents manufacturer code byte device identifier code. STMicroelectronics M27W801, these identifier bytes given Table read-out outputs Note that M27W801 M27C801 have same identifier byte. ERASURE OPERATION (applies EPROM) erasure characteristics M27W801 such that erasure begins when cells exposed light with wavelengths shorter than approximately 4000 should noted that sunlight some type fluorescent lamps have wavelengths 3000-4000 range. Research shows that constant exposure room level fluorescent lighting could erase typical M27W801 about years, while would take approximately week cause erasure when exposed direct sunlight. M27W801 exposed these types lighting conditions extended periods time, suggested that opaque labels over M27W801 window prevent unintentional erasure. recommended erasure procedure M27W801 exposure short wave ultraviolet light which wavelength 2537 integrated dose (i.e. intensity exposure time) erasure should minimum W-sec/cm2. erasure time with this dosage approximately minutes using ultraviolet lamp with 12000 µW/cm2 power rating. M27W801 should placed within inch) lamp tubes during erasure. Some lamps have filter their tubes which should removed before erasure.
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M27W801
Table Ordering Information Scheme
Example: Device Type Supply Voltage 2.7V 3.6V Device Function Mbit (1Mb Speed -100 (1,2) -120 Design -150 -200 Package FDIP32W PDIP32 PLCC32 TSOP32: Temperature Range Optio Tape Reel Packing M27W801
Note:
High Speed, Characteristics section further information. This speed also guarantees 80ns access time 3.0V 3.6V. These speeds replaced 120ns. Packages option available request. Please contact STMicroelectronics local Sales Office.
list available options (Speed, Package, etc.) further information aspect this device, please contact STMicroelectronics Sales Office nearest you.
Table Revision History
Date July 1999 First Issue FDIP32W Package Dimension, added (Table TSOP32 Package Dimension changed (Table 70°C Temperature Range deleted Programming Time changed Read Mode Characteristics: tAVQV, tELQV, tGLQV, tEHQZ, tGHQZ changed (Table Revision Detail
03/15/00
04/21/00
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M27W801
Table FDIP32W Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symb 6.60 10.67 2.54 14.99 38.10 15.24 1.45 0.51 3.91 3.89 0.41 0.23 41.73 13.06 16.18 3.18 1.52 5.72 1.40 4.57 4.50 0.56 0.30 42.04 13.36 18.03 4.10 2.49 0.260 0.420 0.100 0.590 1.500 0.600 0.057 0.020 0.154 0.153 0.016 0.009 1.643 0.514 0.637 0.125 0.060 inches 0.225 0.055 0.180 0.177 0.022 0.012 1.655 0.526 0.710 0.161 0.098
Figure FDIP32W Ceramic Frit-seal with window, Package Outline
FDIPW-b
Drawing scale.
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M27W801
Table PDIP32 Plastic DIP, mils width, Package Mechanical Data
Symb 2.54 15.24 38.10 15.24 1.52 0.38 3.56 0.38 0.20 41.78 13.59 15.24 3.18 1.78 5.08 4.06 0.51 0.30 42.04 13.84 17.78 3.43 2.03 0.100 0.600 1.500 0.600 0.060 inches 0.015 0.140 0.015 0.008 1.645 0.535 0.600 0.125 0.070 0.200 0.160 0.020 0.012 1.655 0.545 0.700 0.135 0.080
Figure PDIP32 Plastic DIP, mils width, Package Outline
PDIP
Drawing scale.
13/16
M27W801
Table PLCC32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symb 0.89 1.27 2.54 1.52 0.33 0.66 12.32 11.35 9.91 14.86 13.89 12.45 0.00 0.10 3.56 2.41 0.38 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 0.25 0.035 0.050 inches 0.100 0.060 0.013 0.026 0.485 0.447 0.390 0.585 0.547 0.490 0.000 0.004 0.140 0.095 0.015 0.021 0.032 0.495 0.455 0.430 0.595 0.555 0.530 0.010
Figure PLCC32 lead Plastic Leaded Chip Carrier, Package Outline
0.51 (.020)
D2/E2
1.14 (.045)
PLCC
Drawing scale.
14/16
M27W801
Table TSOP32 lead Plastic Thin Small Outline, Package Mechanical Data
Symbol 0.500 0.050 0.950 0.150 0.100 19.800 18.300 7.900 0.500 1.200 0.150 1.050 0.270 0.210 20.200 18.500 8.100 0.700 0.100 0.0197 0.0020 0.0374 0.0059 0.0039 0.7795 0.7205 0.3110 0.0197 0.0472 0.0059 0.0413 0.0106 0.0083 0.7953 0.7283 0.3189 0.0276 0.0039 inch
Figure TSOP32 lead Plastic Thin Small Outline, Package Outline
TSOP-a
Drawing scale.
15/16
M27W801
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2000 STMicroelectronics Rights Reserved other names property their respective owners. STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A http://w ww.st.com
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Mbit (1Mb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPERA

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