HN1D03F Ultra High Speed Switching Application Built anode c

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HN1D03F Ultra High Speed Switching Application Built anode c

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HN1D03F
HN1D03F
Ultra High Speed Switching Application
Built anode common cathode common. Unit forward voltage Small total capacitance Unit forward voltage Small total capacitance Unit:
0.90V (typ.) 0.9pF (typ.)
Fast reverse recovery time 1.6ns (typ.)
0.92V (typ.) 2.2pF (typ.)
Fast reverse recovery time 1.6ns (typ.)
Unit Unit Common Maximum Ratings 25°C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Symbol IFSM Tstg Rating -55~125 Unit
JEDEC EIAJ TOSHIBA Weight: 0.015g
SC-74
This Maximum Ratings single diode Q4). case using Unit Unit independently simultaneously, Maximum Ratings diode single diode one.
Marking
Assignment (Top View)
2001-06-07
HN1D03F
Fig.1 Reverse Recovery Time (trr) Test Circuit
Unit Electrical Characteristics (Q1, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz 10mA (fig.1) Typ. 0.60 0.72 0.90 1.20 Unit
Unit Electrical Characteristics (Q3, Common) 25°C)
Characteristic Symbol Forward voltage Reverse current Total capacitance Reverse recovery time Test Circuit Test Condition 10mA 100mA 1MHz 10mA (fig.1) Typ. 0.61 0.74 0.92 1.20 Unit
2001-06-07
HN1D03F
2001-06-07
HN1D03F
RESTRICTIONS PRODUCT
000707EAA
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-06-07

HN1D03F Ultra High Speed Switching Application Built anode c

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