2SD1662 High Current Switching Applications Unit: High curre

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2SD1662 High Current Switching Applications Unit: High curre

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2SD1662
2SD1662
High Current Switching Applications
Unit: High current gain: 1000 (min) (VCE collector saturation voltage: (sat) (max) Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Tstg Rating Unit
JEDEC JEITA TOSHIBA
2-16C1A
Equivalent Circuit
COLLECTOR
Weight: (typ.)
BASE
EMITTER
2003-02-04
2SD1662
Electrical Characteristics 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol ICBO IEBO (BR) (sat) (sat) VECF Test Condition 0.025 Output 1000 Typ. Unit
Turn-on time
Input
Switching time
Storage time
tstg
Fall time -IB2 0.01 duty cycle
Marking
TOSHIBA D1662
Product
Explanation
Month manufacture (January December denoted letters respectively.) Year manufacture (Last decimal digit year manufacture)
2003-02-04
2SD1662
Common emitter 25°C 10000 Common emitter 5000 3000
100°C
current gain
Collector current
1000
Collector current
Collector-emitter voltage
(sat)
Common emitter IC/IB Common emitter
Collector-emitter saturation voltage (sat)
Collector current
-55°C
100°C
Collector current
Base-emitter voltage
Safe Operating Area
(pulsed)* (continuous) operation 25°C
Common emitter
Base-emitter saturation voltage (sat)
IC/IB
Collector current
Single nonrepetitive pulse 25°C Curves must derated linearly with increase temperature. VCEO 0.05
(sat)
-55°C
Collector current
Collector-emitter voltage
2003-02-04
2SD1662
RESTRICTIONS PRODUCT
000707EAA
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2003-02-04

2SD1662 High Current Switching Applications Unit: High curre

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