TOSHIBA Transistor Silicon Epitaxial Type (PCT process) (Darlington po

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TOSHIBA Transistor Silicon Epitaxial Type (PCT process) (Darlington po

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2SD1631
TOSHIBA Transistor Silicon Epitaxial Type (PCT process) (Darlington power transistor)
2SD1631
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit:
High current gain: 4000 (min) (VCE saturation voltage: (sat) (max)
Maximum Ratings 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Tstg Rating 1000 Unit
JEDEC JEITA TOSHIBA
2-7D101A
Weight: (typ.)
Equivalent Circuit
COLLECTOR BASE
EMITTER
2003-02-04
2SD1631
Electrical Characteristics 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO (BR) (sat) (sat) Test Condition Input Output 4000 Typ. Unit
Turn-on time
0.20
Switching time
Storage time
tstg
Fall time
-IB2 duty cycle
Marking
D1631
Product
Explanation
Month manufacture (January December denoted letters respectively.) Year manufacture (Last decimal digit year manufacture)
2003-02-04
2SD1631
Common emitter 25°C
Common emitter 100°C
(mA)
Collector current
Collector current
Collector-emitter voltage
(mA)
Collector-emitter voltage
Common emitter -50°C 50000 30000
(mA)
100°C 10000 5000 3000
Collector current
current gain
1000 Common emitter 0.003 0.01 0.03
Collector current
Collector-emitter voltage
(sat)
Common emitter
Collector-emitter saturation voltage (sat)
IC/IB 1000
-50°C
Collector current
Common emitter
100°C
0.003
0.01
0.03
Collector current
Base-emitter voltage
2003-02-04
2SD1631
(sat)
Base-emitter saturation voltage (sat)
Common emitter IC/IB 1000 -50°C
Collector power dissipation
0.002
0.01
0.03
Collector current
Ambient temperature (°C)
Safe Operating Area
(pulsed)* (continuous) operation 25°C
(mA) Collector current
0.05 0.03
0.01 0.005 0.003
Single nonrepetitive pulse 25°C Curves must derated linearly with increase temperature.
Collector-emitter voltage
2003-02-04
2SD1631
RESTRICTIONS PRODUCT
000707EAA
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2003-02-04

TOSHIBA Transistor Silicon Epitaxial Type (PCT process) (Darlington po

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