Bulletin I27400 IRK.430. SERIES THYRISTOR DIODE THYRISTOR TH

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Bulletin I27400 IRK.430. SERIES THYRISTOR DIODE THYRISTOR TH

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Bulletin I27400
IRK.430. SERIES
THYRISTOR DIODE THYRISTOR THYRISTOR Features
High current capability 3000 VRMS isolating voltage with non-toxic substrate High surge capability High voltage ratings 2000V Industrial standard package recognition pending
SUPER MAGN-A-PAK Power Modules
Typical Applications
Motor starters motor controls motor controls Uninterruptable power supplies Wind miles
Major Ratings Characteristics
Parameters
IT(AV) F(AV) IT(RMS) ITSM 50Hz 60Hz 50Hz 60Hz DRM/VRRM range range range
IRK.430.
15.7 16.4 1232 1125 12320 1600 2000
Units
KA2s KA2s
Order
IRK.430. Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
VRRM maximum repetitive peak reverse voltage
maximum nonrepetitive peak rev. voltage
1700 1900 2100
IRRM max.
max.
IRK.430.
1600 1800 2000
On-state Conduction
Parameter
IT(AV) IF(AV) IT(RMS) ITSM IFSM Maximum average on-state current Case temperature Maximum on-state current Maximum peak, one-cycle, non-repetitive surge current
IRK.430.
15.7 16.4 13.2 13.8
Units Conditions
180° conduction, half sine wave 82°C 10ms 8.3ms 10ms 8.3ms KA2s 10ms 8.3ms 10ms 8.3ms
180° conduction, half sine wave
voltage reapplied 100% VRRM reapplied voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial max.
Maximum fusing
1232 1125
Maximum fusing
12320 0.96 1.06 0.51 0.45 1.65
10ms, voltage reapplied (16.7% IT(AV) IT(AV)), max. IT(AV)), max. (16.7% IT(AV) IT(AV)), max. IT(AV)), max. 1500A, 25°C, 10ms sine pulse
VT(TO)1 level value threshold voltage VT(TO)2 High level value threshold voltage VVFM level value on-state slope resistance High level value on-state slope resistance Maximum on-state forward voltage drop Maximum holding current Typical latching current
1000
25°C, anode supply resistive load
Switching
Parameter
di/dt Maximum rate rise turned-on current Typical delay time Gate current g/dt 1A/µs 0.67% VDRM 25°C 750A, max, di/dt -60A/µs, 50V, dv/dt 20V/µs, Gate
IRK.430.
1000
Units Conditions
A/µs max., 400A, VDRM applied
Typical turn-off time
Order
IRK.430. Series
Blocking
Parameter
dv/dt Maximum critical rate rise off-state voltage VINS IRRM IDRM isolation voltage Maximum peak reverse off-state leakage current 3000 t=1s max., rated VDRM/V applied
IRK.430.
1000
Units Conditions
V/µs 130°C., linear VDRM
Triggering
Parameter
PG(AV) Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. gate current required trigger gate voltage required trigger gate current trigger gate voltage trigger
IRK.430.
0.25
Units Conditions
25°C 25°C max. max., max., 50Hz, max.,
Thermal Mechanical Specifications
Parameter
Tstg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction case RthC-hs Max. thermal resistance, case heatsink Mounting torque SMAP heatsink busbar SMAP Approximate weight Case style 1500 outline table
mounting compound recommended torque should rechecked after period hours allow spread compound
IRK.430.
0.065
Units Conditions
junction, operation
0.02
Super Magn-a-Pak
Order
IRK.430. Series
RthJC Conduction
(The following table shows increment thermal resistance RthJC when devices operate different conduction angles than
Conduction angle
180° 120°
Sinusoidal conduction Rectangular conduction
0.009 0.011 0.014 0.021 0.037 0.006 0.011 0.015 0.022 0.038
Units
Conditions
max.
Ordering Information Table
Device Code
Module type
Circuit configuration (See Circuit Configurations Table) Current rating Voltage code: Code (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
4(K1) 7(K2) 5(G1) 6(G2)
4(K1) 5(G1)
7(K2) 6(G2)
Order
IRK.430. Series
Outline Table
dimensions millimeters (inches)
Order

Bulletin I27400 IRK.430. SERIES THYRISTOR DIODE THYRISTOR TH

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