1.0A MINIATURE SILICON RECTIFIER Features Diffused Junction

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1.0A MINIATURE SILICON RECTIFIER Features Diffused Junction

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POWER SEMICONDUCTORS
1.0A MINIATURE SILICON RECTIFIER
Features
Diffused Junction Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability
Mechanical Data
Case: Molded Plastic Terminals: Plated Leads Solderable MIL-STD-202, Method Polarity: Cathode Band Weight: 0.181 grams (approx.) Mounting Position: Marking: Type Number
20.0 2.00 3.50 0.53 0.64 2.20 2.60 Dimensions
Maximum Ratings Electrical Characteristics
Single Phase, half wave, 60Hz, resistive inductive load. capacitive load, derate current 20%.
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Reverse Voltage Average Rectified Output Current (Note 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed rated load (JEDEC Method) Forward Voltage Peak Reverse Current Rated Blocking Voltage 1.0A 25°C 100°C
Symbol VRRM VRWM VR(RMS)
Unit
1000
IFSM TSTG
+125 +150
Typical Junction Capacitance (Note Typical Thermal Resistance Junction Ambient (Note Operating Temperature Range Storage Temperature Range
*Glass passivated forms available upon request
Note: Leads maintained ambient temperature distance 9.5mm from case Measured Applied Reverse Voltage 4.0V D.C.
2000 Won-Top Electronics
I(AV), AVERAGE FORWARD RECTIFIED CURRENT
INSTANTANEOUS FORWARD CURRENT
PULSE WIDTH 300µs DUTY CYCLE
AMBIENT TEMPERATURE Fig. Forward Current Derating Curve
0.01
INSTANTANEOUS FORWARD VOLTAGE Fig. Typical Forward Characteristics
1MHz
IFSM, PEAK FORWARD SURGE CURRENT
CAPACITANCE (pF)
8.3ms Single half sine-wave JEDEC Method
NUMBER CYCLES Fig. Non-Repetitive Peak Surge Current
REVERSE VOLTAGE Fig. Typical Junction Capacitance
2000 Won-Top Electronics

1.0A MINIATURE SILICON RECTIFIER Features Diffused Junction

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