Motorola Small-Signal Transistors, FETs Diodes Device Data TMOS®
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Motorola Small-Signal Transistors, FETs Diodes Device Data
TMOS® registered trademark Motorola Inc. HDTMOS GreenLine trademarks Motorola Inc. Thermal Clad trademark Bergquist Company.
Motorola Small-Signal Transistors, FETs Diodes Device Data
SMALL-SIGNAL TRANSISTORS, FETs DIODES
This publication presents technical information several product families that comprise Motorola small-signal semiconductor line. families include bipolar transistors, field-effect transistors, diodes. These available variety through hole surface mount packages. Complete device specifications typical performance curves given individual data sheets, which grouped various families. quick comparison performance characteristics presented easy-to-use selector guide first section. tables will assist selection proper device specific application. Seperate sections included describe package outline drawings footprints product reliability quality considerations. information this book been carefully checked believed accurate; however, responsibility assumed inaccuracies. Furthermore, this information does convey purchaser semiconductor devices license under patent rights manufacturer. Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters which provided Motorola data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
Motorola, Inc. 1997 Previous Edition 1994 Printed U.S.A. "All Rights Reserved"
Motorola Small-Signal Transistors, FETs Diodes Device Data
About This Revision
accomodate increasing requirements surface mount components, this publication adds variety device types several choices surface mount packages. expanded MOSFET portfolio include lower RDS(on) HDTMOS devices TSOP-6 package. Dual transistors diodes SC-70 multi-lead package. Family transistors diodes smaller SC-90 package. should noted that Metal Transistors previously listed this data book have been removed this revision. Replacement devices these parts found Chapter
Motorola Small-Signal Transistors, FETs Diodes Device Data
Motorola Device Classifications
effort provide current information customer regarding status given device, Motorola classified devices into three categories: Preferred devices, Current product Recommended Design products. Preferred device device which recommended first choice future use. These devices "preferred" virtue their performance, price functionality, combination attributes which offer overall "best" value customer. This category contains both advanced mature devices which will remain available foreseeable future (generally years). Device types identified "current" first choice product designs, will continue available because popularity and/or standardization volume usage current production designs. These products acceptable designs preferred types considered better alternatives long term usage.
device that been identified "preferred device" "current" device.
Products designated "Not Recommended Design" become obsolete dictated poor market acceptance, technology package that reaching life cycle. Devices this category have uncertain future represent good selection device designs long term usage.
"Not Recommended Design" devices have been removed from data book. event device need longer found within appropriate section data book, refer Replacement Devices index back book there Replacement Part device question.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Table Contents
Selector Guide
Bipolar Devices Plastic-Encapsulated Transistors Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated Surface Mount Transistors 1-10 Field-Effect Transistors 1-18 JFETs 1-18 TMOS FETs 1-20 Surface Mount FETs 1-21 Tuning Switching Diodes 1-23 Tuning Diodes Abrupt Junction 1-23 Tuning Diodes Hyper-Abrupt Junction 1-26 Schottky Diodes 1-29 Switching Diodes 1-31 Multiple Switching Diodes 1-35 GreenLine Devices 1-36 Small Signal Multi-Integrated Devices 1-38
Small-Signal Tuning Switching Diodes
Embossed Tape Reel Radial Tape Fold Reel Device Markings/Date Code Characters Data Sheets
Tape Reel Specifications Packaging Specifications
Tape Reel Specifications Packaging Specifications
Surface Mount Information
Information Using Surface Mount Packages Footprints Soldering
Package Outline Dimensions
Package Outline Dimensions
Plastic-Encapsulated Transistors
Embossed Tape Reel Radial Tape Fold Reel Device Markings/Date Code Characters Data Sheets
Reliability Quality Assurance
Outgoing Quality Reliability Data Analysis Thermal Resistance Flow Activation Energy Reliability Stress Tests Statistical Process Control
GreenLinePortfolio
Data Sheets
Small-Signal Field-Effect Transistors MOSFETs
Embossed Tape Reel Radial Tape Fold Reel Device Markings/Date Code Characters Data Sheets
Replacement Devices 10-1 Alphanumeric Index 11-1
Motorola Small-Signal Transistors, FETs Diodes Device Data
Section
Selector Guide
Brief
This selector guide highlights semiconductors that most popular have history high usage most applications. large selection encapsulated plastic transistors, FETs diodes available surface mount insertion assembly technology. Plastic packages include TO-92 (TO-226AA), 1-Watt TO-92 (TO-226AE), SOT-23, SC-70/SOT-323, SC-90/SOT-416, SC-59, SOD-123, SOT-223, SOT-363, TSOP-6. Plastic multiples available 14-pin 16-pin dual-in-line packages insertion applications: SO-14 SO-16 surface mount applications.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide
Bipolar Transistors
CASE 29-05 TO-226AE 1-WATT (TO-92)
Plastic-Encapsulated Transistors
Motorola's Small Signal TO-226 plastic transistors encompass hundreds devices with wide variety characteristics general-purpose, amplifier switching applications. popular high-volume package combines proven reliability, performance, economy convenience provide perfect solution industrial consumer design problems. devices laser marked ease identification shipped antistatic containers, part Motorola's ongoing practice maintaining highest standards quality reliability.
CASE 29-04 TO-226AA (TO-92)
Table Plastic-Encapsulated General-Purpose Transistors These general-purpose transistors designed small-signal amplification from ratio frequencies. They also useful oscillators general-purpose switches. Complementary devices shown where available (Tables 1-4).
V(BR)CEO Volts
Style
Case 29-04 TO-226AA (TO-92)
MPS8099 MPSA06 2N4410 BC546 BC546B MPSA05 BC182 BC237B BC337 BC547 BC547A BC547B BC547C MPSA20 MPS2222A 2N4401 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338
Typical
MPS8599 MPSA56 BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 2N4403 2N4402 MPS6652 2N3905 2N3906 BC558B 2N4125 BC328
200(1) 210(1) 300(1) 300(1) 300(1) 210(1)
1000
Devices listed bold, italic Motorola preferred devices.
Selector Guide
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Transistors (continued)
Table Plastic-Encapsulated General-Purpose Transistors (continued)
V(BR)CEO Volts VCE(sat) Volts Style
Case 29-05 TO-226AE (1-WATT TO-92)
BDC01D BDB01C MPS6717 MPSW06 BDB02C MPSW56 1000 1000
Table Plastic-Encapsulated Low-Noise Good Linearity These devices designed applications where good linearity low-noise characteristics required: Instrumentation, hi-fi preamplifier.
V(BR)CEO Volts VT(4) NF(5)
Style
Case 29-04 TO-226AA (TO-92)
MPS6428 BC239 BC550B BC550C MPSA18 MPS3904 BC549B BC549C 2N5088 2N5089(6)
MPS6521
2N5087 BC560C MPS3906 MPS4250 BC559B BC559C MPS6523
7.0(7) 6.5(1)
3.5(8) 2.0(1)
40(2) 100(2) 200(2)
Typical Total Input Noise Voltage (see BC413/BC414 BC415/BC416 Data Sheets) Volts. Noise Figure Volts. kHz.
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide
Plastic-Encapsulated Transistors (continued)
Table Plastic-Encapsulated Darlington Transistors Darlington amplifiers cascade transistors used applications requiring very high-gain input impedance. These devices have monolithic construction.
V(BR)CEO Volts VCE(sat) Volts Style
Case 29-05 TO-226AE (1-WATT TO-92)
MPSW45A MPSW64
1000 1000 150K 1000
Case 29-04 TO-226AA (TO-92)
MPSA29 BC373 MPSA27 BC618 2N6427 2N6426 MPSA14 MPSA13 BC517
MPSA77 MPSA75 MPSA64 MPSA63 1000 1000 1000 160K 200K 300K 0.25 200(1)
Table Plastic-Encapsulated High-Current Transistors following table listing devices that capable handling higher current range small-signal transistors.
V(BR)CEO Volts VCE(sat) Volts Style
Case 29-05 TO-226AE (1-WATT TO-92)
MPS6715 MPSW01A MPS6727 MPSW51A 1000 1000 1000 1000 0.5/0.7 1000 1000
Case 29-04 TO-226AA (TO-92)
BC489 BC639 MPS651 MPS650 BC368
Typical
BC490 BC640 MPS751 MPS750 BC369
200/150(1)
1000 2000 2000 1000
1000 1000 1000
0.3/0.5
1000 2000 2000 1000
Devices listed bold, italic Motorola preferred devices.
Selector Guide
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Transistors (continued)
Table Plastic-Encapsulated High-Voltage Amplifier Transistors These high-voltage transistors designed driving neon bulbs indicator tubes, direct line operation, other applications requiring high-voltage capability relatively collector current. These devices listed order decreasing breakdown voltage (V(BR)CEO).
Device Type V(BR)CEO Volts VCE(sat) Volts Style
Case 29-05 TO-226AE (1-WATT TO-92)
MPSW42
Case 29-05 TO-226AE (1-WATT TO-92)
MPSW92
Case 29-04 TO-226AA (TO-92)
BF844 MPSA44 2N6517 BF393 MPSA42 2N5551 0.75 0.15
Case 29-04 TO-226AA (TO-92)
BF493S 2N6520 MPSA92 2N6519 2N5401
Case 29-04 TO-226AA (TO-92)
V(BR)CEO Volts Cont VCE(sat) Volts Style
BF420 BF422
BF421 BF423
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide
Plastic-Encapsulated Transistors (continued)
Table Plastic-Encapsulated Transistors transistors designed small-signal amplification from VHF/UHF frequencies. They also used mixers oscillators same frequency ranges.
V(BR)CEO Volts CRE/CRB
Device Type
Style
Case 29-04 TO-226AA (TO-92)
BF224 MPSH11 MPSH10 BF199 BF959 MPSH17 MPS918 MPS5179 MPS3563 650(2) 650(2) 600(2) 800(2) 600(2) 2000(3) 0.28 0.65 0.35 0.65 6.0(3) 6.0(3) 5.0(3) 6.0(3)
Case 29-04 TO-266AA (TO-92)
MPSH81
600(2) 0.85
Table Plastic-Encapsulated High-Speed Saturated Switching Transistors
toff Device Type V(BR)CEO Volts VCE(sat) Volts Style
Case 29-04 TO-226AA (TO-92)
2N4264 MPS3646 MPS2369A
Capable
0.22
Devices listed bold, italic Motorola preferred devices.
Selector Guide
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Transistors (continued)
Table Plastic-Encapsulated Choppers Devices listed decreasing V(BR)EBO.
Device Type V(BR)EBO Volts Amp(1) VCE(sat) Volts Style
Case 29-04 TO-226AA (TO-92)
MPSA17
0.25
Case 29-04 TO-266AA (TO-92)
MPS404A
-150 -0.2
Table Plastic-Encapsulated Telecom Transistors These devices special product ranges intended telecom applications.
25°C Cont Volts Style
Device Type
V(BR)CEO Volts
Case 29-04 TO-226AA (TO-92)
P2N2222A
Case 29-04 TO-226AA (TO-92)
P2N2907A
Typical
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide
Plastic-Encapsulated Multiple Transistors
manufacturing trend been toward printed circuit board design with requirements smaller packages with more functions. case discrete components multiple device package helps reduce board space requirements assembly costs. Many most popular devices offered standard plastic surface mount packages. This includes small-signal bipolar transistors, N-channel P-channel FETs, well diode arrays.
CASE 646-06 (TO-116) STYLE
CASE 751B-05 SO-16 STYLE
Specification Tables following short form specifications include Quad Dual transistors listed alphanumeric order. Some columns denote different types data indicated either bold italic typeface. headings proper identification. This applies Table this section only.
Ref. Point Subscript Unit
hFE1 hFE2 Volts
Common-emitter Current Gain. Units test Current: ampere
TYPE
Alphanumeric listing type numbers Identification Code
Watts Only
toff
(sat) Volts
Unit
First Letter: Polarity both types multiple device Second Letter: General Purpose Amplifier Noise Audio Amplifier Noise Amplifier General Purpose Amplifier Switch Tuned RF/IF Amplifier Differential Amplifier High Speed Switch Darlington
Power Gain Noise Figure Test Frequency 10-15 Frequency Units: Hertz VCE(sat) Collector-Emitter Saturation Voltage Test Current Current Units: hFE1/hFE2 Current Gain Ratio Differential Base Voltage |VBE1 VBE2|. Differential Amplifiers turn-on time toff turn-off time
Current-Gain-Bandwidth Product
Continuous (DC) Collector Current
Power Dissipation specified 25°C. Single rating. Ref. Point: Ambient Temperature Case Temperature
Rated Minimum Collector-Emitter Voltage Subscript letter identifies base termination listed below order preference. SUBSCRIPT: VCEO, open
Output Capacitance, common-base. Shown without distinction: Collector-Base Capacitance Common-Emitter Reverse Transfer Capacitance
Selector Guide
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Multiple Transistors (continued)
Table Plastic-Encapsulated Multiple Transistors Quad following table listing most popular multiple devices available plastic package. These devices available NPN, PNP, NPN/PNP configurations. (See note.)
hFE1 Watts Only hFE2 VCEO Volts toff (sat) Volts Typ(1)
Device
Case 646-06 TO-116
MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907A MPQ3467 MPQ3725 MPQ3762 MPQ3798 MPQ3799 MPQ3904 MPQ3906 MPQ6001 MPQ6002 MPQ6100A MPQ6426 MPQ6502 MPQ6600A1 MPQ6700 MPQ6842 MPQ7043 MPQ7042 MPQ7051 MPQ7093
0.65 0.625 0.625 0.65 0.75 0.75 0.625 0.625 0.65 0.65 0.65 0.75 0.75 0.75 0.75 0.75 0.05 0.05 0.05 0.05 0.05 0.05 35(1) 9.0(1) 285(1) 15(1) 0.25 3.0(1) 2.0(1) 3.0(1) 2.0(1) 4.0(1)
45(1)
180(1)
0.45 0.55
37(1) 43(1) 30(1) 30(1) 30(1)
136(1) 155(1) 225(1) 225(1) 225(1)
0.25 0.25 0.25 0.15
Table Plastic-Encapsulated Multiple Transistors Quad Surface Mount following table listing most popular multiple devices available plastic SOIC surface mount package. These devices available NPN, PNP, NPN/PNP configurations.
Device V(BR)CEO V(BR)CBO
Case 751B-05 SO-16
MMPQ2222A MMPQ2369 MMPQ2907A MMPQ3467 MMPQ3725 MMPQ3904 MMPQ3906 MMPQ6700 (12)
Typical (12) NPN/PNP NOTE: Some columns show different types data indicated either bold italic typefaces. headings.
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide
Plastic-Encapsulated Surface Mount Transistors
CASE 318D-04 SC-59
This section selector guide lists small-signal plastic devices that available surface mount applications. These devices encapsulated with latest state-of-the-art mold compounds that enhance reliability exhibit excellent performance high temperature high humidity environments. This package offers higher power dissipation capability small-signal applications.
CASE 318-08 TO-236AB SOT-23
CASE 318E-04 SOT-223
CASE 419-02 SC-70/SOT-323
CASE 419B-01 SOT-363
CASE 463-01 SOT-416/SC-90
Table Plastic-Encapsulated Surface Mount General-Purpose Transistors following tables listing small-signal general-purpose transistors SOT-23, SC-59, SOT-223, SC-70, SC-90, SOT-363 surface mount packages. These devices intended small-signal amplification audio, lower frequencies. They also have applications oscillators general-purpose, voltage switches. Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order descending breakdown voltage.
Device Marking V(BR)CEO
Case 318-08 TO-236AB (SOT-23)
BC846ALT1 BC846BLT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 BC847ALT1 BC847BLT1 BC847CLT1 MMBT2222ALT1 MMBT3904LT1 MMBT4401LT1 BC848ALT1 BC848BLT1 BC848CLT1
Case 318-08 TO-236AB (SOT-23)
BC856ALT1 BC856BLT1 MMBT2907ALT1 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC857ALT1 BC857BLT1 MMBT3906LT1 MMBT4403LT1 BC858ALT1 BC858BLT1 BC858CLT1
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-10
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount General-Purpose Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order descending breakdown voltage.
Device Marking V(BR)CEO
Case 318D-04 SC-59
MSD601-RT1 MSD601-ST1 MSD602-RT1 MSD1328-RT1
150(1) 150(1) 200(1) 200(1)
Case 318D-04 SC-59
MSB709-RT1 MSB710-RT1
100(1) 200(1)
Case 419-02 SC-70/SOT-323 -NPN
BC818WT1 BC818-25WT1 BC818-40WT1 BC846AWT1 BC846BWT1 BC847AWT1 BC847BWT1 BC847CWT1 BC848AWT1 BC848BWT1 BC848CWT1 MMBT2222AWT1 MMBT3904WT1 MSC3930-BT1 MSD1819A-RT1
Case 419-02 SC-70/SOT-323 -PNP
BC808-25WT1 BC808-40WT1 BC856AWT1 BC856BWT1 BC857AWT1 BC857BWT1 BC858AWT1 BC858BWT1 BC858CWT1 MMBT2907AWT1 MMBT3906WT1 MSB1218A-RT1
Case 419B-01 SOT-363 Dual
MBT3904DW1T1 MBT3904DW9T1
Case 419B-01 SOT-363 Dual
MBT3906DW1T1 MBT3906DW9T1
Typical
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-11
(OUT)
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount General-Purpose Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order descending breakdown voltage.
Device Marking V(BR)CEO
(IN)
(GND)
Case 419B-01 SOT-363 Dual Combination
MBT3946DW1T1
Case 463-01 SOT-416/SC-90
2SC4617
Case 463-01 SOT-416/SC-90
2SA1774
Table Plastic-Encapsulated Surface Mount Bias Resistor Transistors Table General Purpose Applications Pinout: 1-Base, 2-Emitter, 3-Collector These devices include bias resistors semiconductor chip with transistor. diagram orientation resistors.
Device Marking V(BR)CEO Volts (Min) hFE@
Case 318D-04 SC-59
MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1
4.7K 1.0K 2.2K 4.7K 4.7K 1.0K 2.2K 4.7K
Case 318-08 TO-236AB (SOT-23)
MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1
4.7K 1.0K 2.2K 4.7K 4.7K 1.0K 2.2K 4.7K
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-12
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount Bias Resistor Transistors General Purpose Applications (continued) Pinout: 1-Base, 2-Emitter, 3-Collector
Device Marking V(BR)CEO Volts (Min) hFE@
Case 419-02 SC-70/SOT-323
MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1
4.7K 1.0K 2.2K 4.7K 4.7K 1.0K 2.2K 4.7K
Case 419B-01 SOT-363 Duals
MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 Device Marking V(BR)CEO 4.7K 1.0K 2.2K 4.7K 4.7K 2.2K 1.0K 2.2K 4.7K
Case 419B-01 SOT-363 Dual Combination
MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1
Device Marking V(BR)CEO Volts (Min) hFE@ 4.7K 1.0K 2.2K 4.7K 4.7K 2.2K 1.0K 2.2K 4.7K
Case 463-01 SOT-416/SC-90
DTC114TE DTC114YE
DTA114YE DTA143EE 4.7K 4.7K
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-13
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount Switching Transistors following tables listing devices intended high-speed, saturation voltage, switching applications. These devices have very fast switching times output capacitance optimized switching performance. Pinout: 1-Base, 2-Emitter, 3-Collector
Switching Time (ns) Device Marking toff V(BR)CEO hFE@
Case 318-08 TO-236AB (SOT-23)
MMBT2369LT1 MMBT2369ALT1 BSV52LT1
Case 318-08 TO-236AB (SOT-23)
MMBT3640LT1
Table Plastic-Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators following table listing devices intended small-signal amplifier applications VHF/UHF frequencies. These devices also used VHF/UHF oscillators mixers. Pinout: 1-Base, 2-Emitter, 3-Collector
Device Marking V(BR)CEO Ccb(13)
Case 318-08 TO-236AB (SOT-23)
MMBTH10LT1 MMBT918LT1 MMBTH24LT1
1.7(14) 0.45 0.65
Case 318-08 TO-236AB (SOT-23)
MMBTH81LT1 MMBTH69LT1
0.85 0.35(13)
Pinout: 1-Emitter, 2-Base, 3-Collector Case 318D-04 SC-59
MSC2295-BT1 MSC2295-CT1 MSC3130T1
1.5(13) 1.5(13) 2.0(13) 0.15 0.15
Case 318D-04 SC-59
MSA1022-CT1
(13) (14)
0.15
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-14
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount Choppers following table listing small-signal devices intended chopper applications where higher than normal V(BR)CEO required circuit application. Pinout: 1-Base, 2-Emitter, 3-Collector
Device Marking V(BR)CEO V(BR)EBO
Case 318-08 TO-236AB (SOT-23)
MMBT404ALT1
Table Plastic-Encapsulated Surface Mount Darlingtons following table listing small-signal devices that have very high input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order descending hFE.
VCE(sat) Volts
Device
Marking
V(BR)CES
Case 318-08 TO-236AB (SOT-23)
MMBTA14LT1 MMBTA13LT1
Case 318-08 TO-236AB (SOT-23)
MMBTA64LT1
Table Plastic-Encapsulated Surface Mount Low-Noise Transistors following table listing small-signal devices intended noise applications audio range. These devices exhibit good linearity candidates hi-fi instrumentation equipment. Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order ascending
hFE@ V(BR)CEO
Device
Marking
Case 318-08 TO-236AB (SOT-23)
MMBT5089LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1
2.0(15) 3.0(15)
Case 318-08 TO-236AB (SOT-23)
MMBT5087LT1
(15)
2.0(15)
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-15
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount High-Voltage Transistors following table listing small-signal high-voltage devices designed direct line operation requiring high voltage breakdown relatively current capability. Pinout: 1-Base, 2-Emitter, 3-Collector Devices listed order descending breakdown voltage.
hFE@ Device Marking V(BR)CEO
Case 318-08 TO-236AB (SOT-23)
MMBT6517LT1 MMBTA42LT1 MMBT5551LT1
Case 318-08 TO-236AB (SOT-23)
MMBT6520LT1 MMBTA92LT1 MMBT5401LT1
Table Plastic-Encapsulated Surface Mount Drivers following listing small-signal devices intended medium voltage driver applications fairly high current levels. Pinout: 1-Base, 2-Emitter, 3-Collector
hFE@ Device Marking V(BR)CEO VCE(sat) VBE(sat)
Case 318-08 TO-236AB (SOT-23)
MMBTA06LT1 BSS64LT1
0.25 0.15
Case 318-08 TO-236AB (SOT-23)
BSS63LT1 MMBTA56LT1 0.25 0.25 0.90
following devices designed conserve energy. They offer ultra-low collector saturation voltage. Case 318-08 TO-236AB (SOT-23)
MMBT1010LT1
Case 318-03 SC-59
MSD1010T1
Table Plastic-Encapsulated Surface Mount General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector
hFE@ Device Marking V(BR)CEO
Case 318E-04 SOT-223
BCP56T1
Case 318E-04 SOT-223 Pinout: 1-Gate, 2-Drain, 3-Source, 4-Drain
BCP53T1
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-16
Motorola Small-Signal Transistors, FETs Diodes Device Data
Plastic-Encapsulated Surface Mount Transistors (continued)
Table Plastic-Encapsulated Surface Mount Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector
Device Marking toff V(BR)CEO (mA) (MHz)
Case 318E-04 SOT-223
PZT2222AT1
Case 318E-04 SOT-223
PZT2907AT1
Table Plastic-Encapsulated Surface Mount Darlingtons Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector
VCE(sat) (mA)
Device
Marking
V(BR)CER
Case 318E-04 SOT-223
BSP52T1 PZTA14T1
2000
Case 318E-04 SOT-223
BSP62T1 PZTA64T1
2000
Table Plastic-Encapsulated Surface Mount High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector
Device Marking V(BR)CEO (mA) (MHz)
Case 318E-04 SOT-223
BSP19AT1 PZTA42T1 BF720T1
SP19A BF720
Case 318E-04 SOT-223
PZTA96T1 PZTA92T1 BSP16T1 BF721T1
ZTA96 BSP16 BF721
Table Plastic-Encapsulated Surface Mount High Current Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector
Device Marking V(BR)CEO VCE(sat) Volts hFE@
Case 318E-04 SOT-223
PZT651T1 BCP68T1
1000 1000
Case 318E-04 SOT-223
PZT751T1 BCP69T1
ZT751 1000 1000
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-17
Field-Effect Transistors
JFETs
JFETs operate depletion mode. They available both N-channel offered both Through-hole Surface Mount packages. Applications include general- purpose amplifiers, switches choppers, amplifiers mixers. These devices economical very rugged. drain source interchangeable many typical FETs.
CASE 29-04 TO-226AA (TO-92)
Table JFET Low-Frequency/Low-Noise following table listing small-signal JFETs intended low-noise applications audio range. These devices exhibit good linearity candidates hi-fi instrumentation equipment.
Device mmho µmho V(BR)GSS V(BR)GDO Volts VGS(off) Volts IDSS Style
Ciss
Crss
Case 29-04 TO-226AA (TO-92) N-Channel
J202 2N5457 2N5458
Case 29-04 TO-226AA (TO-92) P-Channel
2N5460 2N5461 2N5462
0.75
Table JFET High-Frequency Amplifiers following listing small-signal JFETs that intended hi-frequency applications. These candidates VHF/UHF oscillators, mixers front-end amplifiers.
Device mmho µmho V(BR)GSS V(BR)GDO Volts VGS(off) Volts IDSS Style
Ciss
Crss
Case 29-04 TO-226AA (TO-92) N-Channel
MPF102 2N5484 2N5485 2N5486 J308 J309 J310
Typical
12(1) 12(1) 12(1)
250(1) 250(1) 250(1)
1.5(1) 1.5(1) 1.5(1)
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-18
Motorola Small-Signal Transistors, FETs Diodes Device Data
JFETs (continued)
Table JFET Switches Choppers following listing JFETs intended switching chopper applications.
RDS(on) Device VGS(off) Volts IDSS V(BR)GSS V(BR)GDO Volts
Ciss
Crss
toff
Style
Case 29-04 TO-226AA (TO-92) N-Channel
J112 MPF4392 2N5639 MPF4393 2N5640 2N5555 J110
Typical (16) GS(f)
(8.0)(1) (12)(1) (6.0)(1) 1.0(16)
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-19
TMOS FETs
CASE 29-05 TO-226AE 1-WATT (TO-92) CASE 29-04 TO-226AA (TO-92)
Table TMOS Switches Choppers following listing small-signal TMOS devices that intended switching chopper applications. These devices offer RDS(on) characteristics.
RDS(on) Device VGS(th) Volts
V(BR)DSS Volts
Ciss
Crss
toff
Style
Case 29-05 TO-226AE (1-WATT TO-92) N-Channel
MPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM
70(1) 70(1) 30(1) 70(1) 30(1) 30(1) 20(1) 20(1) 4(1) 20(1) 4(1) 4(1)
Case 29-04 TO-226AA (TO-92) N-Channel
VN0300L 2N7000 BS170 VN0610LL VN2406L BS107A 2N7008 VN2222LL VN2410L BS107
Typical
0.25
25(1) 60(1) 60(1)
3.0(1) 6.0(1) 6.0(1)
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-20
Motorola Small-Signal Transistors, FETs Diodes Device Data
Surface Mount FETs
This section contains plastic packages available surface mount applications. Most these devices most popular metal-can insertion type parts carried over surface mount packages.
CASE 318-08 TO-236AB SOT-23
CASE 419-02 SC-70/SOT-323
CASE 419B-01 SOT-363
CASE 318E-04 SOT-223
Table Surface Mount JFETs following list surface mount FETs which intended VHF/UHF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate
Device Marking mmhos mmhos Volts V(BR)GSS Style
Case 318-08 TO-236AB (SOT-23) N-Channel
MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1
2(3)
Case 419B-01 SOT-363- Dual N-Channel
MBF4416DW1T1
Table Surface Mount General-Purpose JFETs following table listing surface mount small-signal general purpose FETs. These devices intended small-signal amplification audio, lower frequencies. They also have applications oscillators general-purpose, low-voltage switches. Pinout: 1-Drain, 2-Source, 3-Gate
Device Marking V(BR)GSS mmhos mmhos Volts IDSS Style
Case 318-08 TO-236AB (SOT-23) N-Channel
MMBF5457LT1
Case 318-08 TO-236AB (SOT-23) P-Channel
MMBF5460LT1
Case 419B-01 SOT-363 Dual N-Channel
MBF5457DW1T1
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-21
Surface Mount FETs (continued)
Table Surface Mount Choppers/Switches JFETs following listing small-signal surface mount JFET devices intended switching chopper applications. Pinout: 1-Drain, 2-Source, 3-Gate
RDS(on) Ohms toff VGS(off) V(BR)GSS Volts Volts IDSS Style
Device
Marking
Case 318-08 TO-236AB (SOT-23) N-Channel
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
-4.0 -2.0 -0.5 -5.0 -3.0
Case 318-08 TO-236AB (SOT-23) P-Channel
MMBFJ175LT1 MMBFJ177LT1
Table TMOS FETs following listing small-signal surface mount TMOS FETs which exhibit RDS(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain
RDS(on) Device Marking VDSS VGS(th) Volts Volts Switching Time toff Style
Case 318-08 TO-236AB (SOT-23) N-Channel
MMBF170LT1 BSS123LT1 BSS138LT1 2N7002LT1 MMBF0201NLT1 MGSF1N02LT1 MGSF1N03LT1 0.085 0.09 1200 1200
Case 318-08 TO-236 (SOT-23) P-Channel
BSS84LT1 MMBF0202PLT1 MGSF1P02LT1 MGSF1P02ELT1
0.35 0.16 1500 1500
Pinout: 1-Gate, 2-Drain, 3-Source, 4-Drain
RDS(on) Device Marking VDSS VGS(th) Volts Volts Switching Time toff Style
Case 318E-04- SOT-223 N-Channel
MMFT960T1 MMFT6661T1 MMFT2406T1 MMFT107T1
FT960 T6661 T2406 FT107 1000 1000
Case 419-02 SC-70/SOT-323 N-Channel
MMBF2201NT1
Case 419-02 SC-70/SOT-323 P-Channel
MMBF2202PT1
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-22
Motorola Small-Signal Transistors, FETs Diodes Device Data
Tuning Switching Diodes
Tuning Diodes Abrupt Junction
Motorola supplies voltage-variable capacitance diodes serving entire range frequencies from through UHF. Used receivers transmitters, they have variety applications, including: Phase-locked loop tuning systems Local oscillator tuning Tuned preselectors filters phase shifters amplifiers Automatic frequency control Video filters delay lines Harmonic generators modulators families devices available: Abrupt Junction Hyper Abrupt Junction. Abrupt Junction family includes devices suitable virtually tuned-circuit narrow-range tuning applications throughout spectrum.
CASE 29-04 TO-226AA (TO-92) CASE 51-02 DO-204AA (DO-7) STYLE STYLE
CASE 182-02 TO-226AC (TO-92)
Cathode STYLE
Anode
CASE 318-08 TO-236AB SOT-23
Cathode STYLE
Anode
CASE 463-01 SOT-416/SC-90 STYLE
Typical Characteristics
Diode Capacitance versus Reverse Voltage
DIODE CAPACITANCE (pF) REVERSE VOLTAGE (VOLTS) 25°C DIODE CAPACITANCE (pF) 1N5148 1000
MV1638
1N5456A MV1650
(See Tables Thru MV1628
REVERSE VOLTAGE (VOLTS)
1000 DIODE CAPACITANCE (pF) MV2115 DIODE CAPACITANCE (pF) MV2109 MMBV2109LT1
MMBV432LT1 MV104
MV2101 MMBV2101LT1 MV2105 MMBV2105LT1
25°C EACH DIODE REVERSE VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
(See Tables
(See Table
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-23
Tuning Diodes Abrupt Junction (continued)
Table General-Purpose Glass Abrupt Tuning Diodes High Capacitance Ratio Volts/60 Volts following listing axial leaded, general-purpose, abrupt tuning diodes. These devices exhibit high characteristics.
Device(19) Nominal V(BR)R Volts Ratio C4/C60
Case 51-02 DO-204AA (DO-7)
1N5148 42.3 51.7
Table General-Purpose Glass Abrupt Tuning Diodes High Capacitance Ratio Volts/30 Volts following listing axial leaded, general-purpose, abrupt tuning diodes. These devices exhibit very high characteristics.
Device(20) Nominal VR(BR)R Volts Ratio C2/C30
Case 51-02 DO-204AA (DO-7)
1N5446ARL 1N5448ARL 1N5456A
(19)Suffix 10.0% (20)Suffix 5.0%
16.2 19.8
19.8 24.2
Table General-Purpose Glass Abrupt Tuning Diodes Capacitance Ratio Volts/20 Volts following listing axial leaded, general-purpose, abrupt tuning diodes. These devices exhibit high characteristics.
Device Nominal V(BR)R Volts Ratio C2/C20
Case 51-02 DO-204AA (DO-7)
MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 10.8 13.5 16.2 19.8 29.7 73.8 13.2 16.5 19.8 24.2 36.3 90.2
Table General-Purpose Plastic Abrupt Tuning Diodes Capacitance Ratio Volts/30 Volts following listing plastic package, general-purpose, abrupt tuning diodes. These devices exhibit high characteristics.
Device Nominal VR(BR)R Volts Ratio C4/C30
Case 182-02 TO-226AC (TO-92) 2-Lead
MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
10.8 13.5 24.3 29.7 42.3 13.2 16.5 29.7 36.3 51.7
Selector Guide 1-24
Motorola Small-Signal Transistors, FETs Diodes Device Data
Tuning Diodes Abrupt Junction (continued)
Table Surface Mount Abrupt Tuning Diodes Capacitance Ratio Volts/30 Volts following listing surface mount abrupt junction tuning diodes intended general-purpose variable capacitance circuit applications.
Device Nominal VR(BR)R Volts Ratio C2/C30
Case 318-08 DO-236AB (SOT-23)
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
13.5 19.8 24.3 29.7 16.5 24.2 29.7 36.3
Table Abrupt Tuning Diodes Radio Dual following listing abrupt tuning diodes that available dual units single package.
VR(22) Device Volts Ratio C3/C30
V(BR)R Volts
Device Marking
Style
Case 29-04 TO-226AA (TO-92)
MV104
Case 318-08 TO-236AB (SOT-23)
MMBV432LT1
(21)C2/C8 (22)Each Diode
48.1
1.5(21)
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-25
Tuning Diodes Hyper-Abrupt Junction
Hyper-Abrupt family exhibits higher capacitance, much larger capacitance ratio. particularly well suited wider-range applications such AM/FM radio tuning.
CASE 51-02 DO-204AA (DO-7) Cathode STYLE Anode
CASE 182-02 TO-226AC (TO-92)
Anode STYLE
Cathode
CASE 318-08 TO-236AB SOT-23
Cathode STYLE
Anode
CASE 318E-04 SOT-223 STYLE
Typical Characteristics
Diode Capacitance versus Reverse Voltage
DIODE CAPACITANCE (pF) 25°C MMBV105GLT1 CAPACITANCE (pF) MMBV109LT1 MV209
REVERSE VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
Figure Diode Capacitance
Figure Diode Capacitance
Selector Guide 1-26
Motorola Small-Signal Transistors, FETs Diodes Device Data
Tuning Diodes Hyper-Abrupt Junction (continued)
DIODE CAPACITANCE (pF) REVERSE VOLTAGE (VOLTS) MMBV409LT1 MV409 DIODE CAPACITANCE (pF) MMBV809LT1
REVERSE VOLTAGE (VOLTS)
Figure Diode Capacitance
Figure Diode Capacitance
DIODE CAPACITANCE (pF) DIODE CAPACITANCE (pF) 25°C MMBV3102LT1
MMBV609LT1
REVERSE VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
Figure Diode Capacitance
Figure Diode Capacitance Each
MV7005T1
1000 DIODE CAPACITANCE (pF) CAPACITANCE (pF) MV1405 MV1403 MV1404 MV7404T1 25°C
REVERSE VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
Figure Capacitance versus Reverse Voltage
Figure Diode Capacitance versus Reverse Voltage
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-27
Tuning Diodes Hyper-Abrupt Junction (continued)
Table Hyper-Abrupt Tuning Diodes Telecommunications Single following listing hyper-abrupt tuning diodes intended high frequency, radio, tuner applications.
MHz) Device Volts Ratio Volts V(BR)R Volts Device Marking Case Style Curve
Case 182-02 TO-226AC (TO-92)
MV209 MV409
3/25
Case 318-08 TO-236AB (SOT-23)
MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 MMBV3102LT1
3/25 3/25 3/25
Case 419-02 SC-70/SOT-323
MBV109T1
3/25
Table Hyper-Abrupt Tuning Diodes Communications Dual
MHz) Device Volts Ratio Volts V(BR)R Volts Device Marking Case Style Curve
Case 318-08 TO-236AB (SOT-23)
MMBV609LT1
Table Hyper-Abrupt High Capacitance Voltage Variable Diode Surface Mount following high capacitance voltage variable diodes intended frequency applications circuits requiring large tuning capacitance.
Device V(BR)R Volts Ratio Style Curve Figure
Case 318E-04- SOT-223 Pinout: 1-Anode, 4-Cathode, 3-NC
MV7005T1 MV7404T1
12(26) 10(27) 150(28) 200(29)
Table Hyper-Abrupt High Capacitance Tuning Diodes Axial Lead Glass Package
Device Volts Ratio C2/C10 V(BR)R Volts Curve Figure
Style
Case 51-02 DO-204AA (DO-7)
MV1404 MV1403 MV1405
(26) (27) (28) (29)
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-28
Motorola Small-Signal Transistors, FETs Diodes Device Data
Schottky Diodes
Schottky diodes ideal mixer detector applications well many higher frequency applications. They provide stable electrical characteristics eliminating point-contact diode presently used many applications.
CASE 182-02 TO-226AC (TO-92) STYLE Cathode Anode Cathode
CASE 425-04 SOD-123 STYLE Anode
CASE 419-02 SC-70/SOT-323 Single
CASE 419B-01, STYLE SOT-363
CASE 318-08 TO-236AB SOT-23 STYLE STYLE Series
STYLE Single
Common Cathode STYLE Anode Cathode Cathode
STYLE Series
Typical Characteristics
Capacitance versus Reverse Voltage
MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* 25°C CAPACITANCE (pF) EACH DIODE REVERSE VOLTAGE (VOLTS) REVERSE VOLTAGE (VOLTS) MBD701, MMBD701LT1 MBD301, MMBD301LT1 25°C
CAPACITANCE (pF)
(See Table
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-29
Schottky Diodes (continued)
Table Schottky Diodes following listing Schottky diodes that exhibit forward voltage drop improved circuit efficiency.
V(BR)R Volts Volts Minority Lifetime (TYP) Device Marking
Device
Style
Case 182-02 TO-226AC (TO-92)
MBD701 MBD301 MBD101 BAS40LT1 BAS40-04LT1 BAS70LT1 BAT54ALT1 BAT54LT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 BAS40-06LT1 BAS70-04LT1(23) MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD452LT1
0.75 0.75 0.37 1000 1000 2000 2000 2000 1000 2000 0.25 2000 2000
Case 318-08 TO-236AB (SOT-23) Single
Case 318-08 TO-236AB (SOT-23) Dual
Case 425-04 (SOD-123)
BAT54T1 MMSD701T1 MMSD301T1 MMSD101T1 BAT54WT1 MMBD330T1 MMBD770T1 BAT54SWT1 MMBD352WT1 MMBD717LT1(23)
(23) Common Anode
Case 419-02 (SC-70/SOT-323) Single
Case 419-02 (SC-70/SOT-323) Dual
Case 419B-01 SOT-363 Duals
V(BR)R Device Marking Volts (µA) (µA) Volts Volts Volts 0.32 (mA) (30) (pF) (ns) Case Style
MBD54DWT1 MBD110DWT1 MBD330DWT1 MBD770DWT1
(30)
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-30
Motorola Small-Signal Transistors, FETs Diodes Device Data
Switching Diodes
Small-signal switching diodes intended current switching steering applications. Hot-Carrier, general-purpose diodes allow wide selection specific application requirements.
CASE 29-04 TO-226AA (TO-92) STYLE CASE 182-02 TO-226AC (TO-92)
Typical Characteristics
Capacitance versus Reverse Voltage
DIODE CAPACITANCE (pF) 25°C
STYLE
STYLE Cathode Anode
MPN3404
MMBV3401LT1
MPN3700 MMBV3700LT1
CASE 318-08 TO-236AB SOT-23 STYLE COMMON ANODE
STYLE
REVERSE VOLTAGE (VOLTS)
SINGLE
(See Table
STYLE Cathode CASE 425-04 SOD-123 Anode COMMON CATHODE STYLE ANODE CATHODE SERIES STYLE
STYLE SINGLE
STYLE SERIES
CASE 463-01 SOT-416/SC-90 CATHODE STYLE ANODE STYLE CASE 318D-04 SC-59
STYLE STYLE SINGLE STYLE COMMON ANODE COMMON CATHODE STYLE COMMON ANODE STYLE SINGLE
STYLE SINGLE STYLE COMMON CATHODE
CASE 419-02 SC-70/SOT-323
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-31
Switching Diodes (continued)
Table Switching Diodes following diodes designed band switching general-purpose current switching applications.
V(BR)R Volts Volts Series Resistance
Device
Device Marking
Style
Case 182-02 TO-226AC (TO-92)
MPN3700 MPN3404 0.85
Case 318-08 TO-236AB (SOT-23)
MMBV3700LT1 MMBV3401LT1
Table General-Purpose Signal Switching Diodes Single following listing small-signal switching diodes surface mount packages. These diodes intended current switching signal steering applications.
V(BR)R Device Marking Volts (µA) (µA) Volts Volts Volts (mA) CT(30) (pF) (ns) Case Style
Case 318-08 TO-236AB (SOT-23)
BAS21LT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1
0.85
Case 318D-04 SC-59
M1MA151AT1 M1MA151KT1
Case 419-02 SC-70/SOT-323
BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1
0.02 1.25
Case 425-04- SOD-123
MMSD914T1 MMSD71RKT1
(30)
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-32
Motorola Small-Signal Transistors, FETs Diodes Device Data
Switching Diodes (continued)
Table General-Purpose Signal Switching Diodes Dual following listing small-signal switching diodes surface mount packages. These diodes intended current switching signal steering applications.
V(BR)R Device Marking Volts (µA) (µA) Volts Volts Volts (mA) CT(30) (pF) (ns) Case Style
Case 318-08 TO-236AB (SOT-23)
MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1
0.75 0.85
Case 318D-04 SC-59
M1MA151WAT1 M1MA151WKT1
Case 419-02 SC-70/SOT-323
M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1
Case 463-01 SOT-416/SC-90 (Common Anode)
DAP222
Case 463-01 SOT-416/SC-90 (Common Cathode)
DAN222
Table Low-Leakage Medium Speed Switching Diodes Single
V(BR)R Device Marking Volts (µA) (nA) Volts Volts Volts (mA) CT(30) (pF) (ns) Case Style
Case 318-08 TO-236AB (SOT-23)
BAS116LT1 MMBD1000LT1
0.95 3000 3000
Case 419-02 (SOT-323)/(SC-70)
MMBD2000T1
0.95 3000
Case 318D-04 (SC-59)
MMBD3000T1
0.95 3000
Case 425-04 (SOD-123)
MMSD1000T1
0.95 3000
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-33
Switching Diodes (continued)
Table Low-Leakage Medium Speed Switching Diodes Dual
V(BR)R Device Marking Volts (µA) (nA) Volts Volts Volts (mA) CT(30) (pF) (ns) Case Style
Case 318-08 TO-236AB (SOT-23)
BAV170LT1 BAV199LT1 BAW156LT1 MMBD1005LT1 MMBD1010LT1
0.95 0.95 3000 3000 3000 3000 3000
Case 419-02 (SOT-323)/(SC-70) DUAL
MMBD2005T1 MMBD2010T1
0.95 0.95 3000 3000
Case 318D-04 (SC-59) DUAL
MMBD3005T1 MMBD3010T1
(30)
0.95 0.95
3000 3000
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-34
Motorola Small-Signal Transistors, FETs Diodes Device Data
Multiple Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated planar process. They designed satisfy fast switching requirements core driver encoding/decoding applications where their monolithic configurations offer lower cost, higher reliability space savings.
CASE 751A-03 SO-14 PLASTIC
CASE 751B-05 SO-16 PLASTIC
Diode Array Diagrams
Diode Array (Common Anode)
Dual Diode Array
Isolated Diode Array
Diode Array
Dual Diode Array
4,6,10,13
Diode Array (Common Cathode)
Isolated Diode Array
Table Diode Arrays Case 751A-03- SO-14
MMAD130 MMAD1103 MMAD1105 MMAD1106 MMAD1107 MMAD1109
Dual Diode Array Diode Array Diode Common Cathode Array Diode Common Anode Array Dual Diode Array Isolated Diode Array
Case 751B-05 SO-16
MMAD1108
Isolated Diode Array
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-35
CASE 318-08 TO-236AB SOT-23
CASE 318D-04 SC-59
CASE 318E-04 SOT-223
Plastic-Encapsulated Surface Mount Devices
Energy. It's something Motorola putting energy into helping save. That's we're introducing GreenLineportfolio devices, featuring energy-conserving traits superior those existing line standard parts same usage. GreenLine devices actually help reduce power demands your products. Wide Range Applications Currently, portfolio consists three families. Low-Leakage Switching Diodes: With reverse leakage specifications guaranteed they help extend battery life, making them ideal small battery-operated systems which standby power essential. Applications include protection, reverse voltage protection, steering logic. Bipolar Output Driver Transistors: Offering ultra-low collector saturation voltage, they deliver more energy intended load with less power wasted through dissipation loss. They especially effective today's lower voltage battery-powered applications, prolong battery life portable hand-held communications personal digital equipment.
CASE 419-02 SC-70/SOT-323
CASE 318G-02 TSOP-6
CASE 425-04 SOD-123
Small Signal HDTMOSTM: These devices provide lowest ever drain-source resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss, making them especially effective low-current applications where energy conservation crucial, such current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, bias switching. This makes them ideal portable computer-type products system where combination power management energy conservation key. Save Energy Save Money increasingly power-hungry world, Motorola's GreenLine portfolio makes powerful sense. much sense that plan continue adding devices portfolio. Chances are, there Motorola GreenLine devices applicable more your products ones that help save energy, dollars environment.
Table Bipolar Driver Transistor These offer ultra-low collector saturation voltage. Pinout: 1-Base, 2-Emitter, 3-Collector
hFE@ Device Type Marking Case SOT-23 SC-59 V(BR)CEO VCE(sat) VBE(sat)
MMBT1010LT1 MSD1010T1
Selector Guide 1-36
Motorola Small-Signal Transistors, FETs Diodes Device Data
GreenLine (continued)
Table Leakage Switching Diodes These offer reverse leakage specifications guaranteed Versions available single dual.
V(BR)R Device Type Marking Case SOT-23 SOT-23 SOT-23 SC-70 SC-70 SC-70 SC-59 SC-59 SC-59 SOD-123 Style Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Volts (µA) (nA) Volts
MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1 MMBD3000T1 MMBD3005T1 MMBD3010T1 MMSD1000T1
Table Small Signal HDTMOSMOSFETs These provide lowest drain-source resistance versus package size.
RDS(on) Device Type Marking Channel @Vgs1 @Vgs2 (4.5 @Vgs3 (2.5 VDSS VGS(th) Volts Volts Switching Time t(on) t(off) Style
Case 318-08 TO-236AB (SOT-23) P-Channel N-Channel
2N7002LT1 BSS84LT1 BSS123LT1 BSS138LT1 MMBF0201NLT1 MMBF0202PLT1 MGSF1N02LT1 MGSF1N03LT1 MGSF1P02LT1 MGSF1P02ELT1
0.085 0.10 0.16 0.125 0.145 0.21
Case 318G-02 TSOP-6 P-Channel N-Channel
MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1
0.065 0.065 0.10 0.10 0.10 0.10 0.07 0.07 0.095 0.095 0.19 0.19 0.135 0.135 0.095 0.095 0.45 0.45
Case 419-02 SC-70/SOT-323
MMBF2202PT1 MMBF2201NT1
Devices listed bold, italic Motorola preferred devices.
Motorola Small-Signal Transistors, FETs Diodes Device Data
Selector Guide 1-37
Small Signal Multi-integrated Devices
CASE 419B-01 SOT-363
CASE 318-08 SOT-23 Vout
VENBL
Vref Iout
MDC3105LT1
MDC5001T1
INTERNAL CIRCUIT DIAGRAMS Table Voltage Bias Stabilizer silicon SMALLBLOCKintegrated circuit which maintains stable bias current various discrete bipolar junction field effect transistors.
(Volts) Device Type Marking Vref Volts Vref Volts
Case 419B-01 SOT-363
MDC5001T1
Table Integrated Relay/Solenoid Driver Monolithic circuit block switch relays. intended replace array three discrete components.
(Volts) Device Type (Volts) Vsat (Volts) (mA) IC(on) (mA)
Case 318-08 SOT-23
MDC3105LT1
Devices listed bold, italic Motorola preferred devices.
Selector Guide 1-38
Motorola Small-Signal Transistors, FETs Diodes Device Data
Section
Plastic-Encapsulated Transistors
Brief
Motorola's plastic transistors diodes encompass hundreds devices spanning gamut from general-purpose amplifiers switches with wide variety characteristics dedicated special-purpose devices most demanding applications. popular TO-92, 1-Watt TO-92 TO-116 combine proven reliability performance economy through-the-hole manufacturing, while SOT-23, SC-59, SC-70/SOT-323, SC-90/SOT-416, SOT-223, SO-16 offer same solutions surface mount manufacturing. additional service customers Motorola will, upon request, supply many these devices tape reel automatic insertion. Contact your Motorola representative ordering information. This section contains both single multiple plasticencapsulated transistors. NOTE: SOT-23 package devices have "T1" suffix NOTE: added device title.
CASE 29-04 (TO-226AA) TO-92
CASE 29-05 (TO-226AE) WATT TO-92
CASE 318-08 (TO-236AB) SOT-23
CASE 318D-04 SC-59
CASE 318E-04 (TO-261AA) SOT-223
CASE 419-02 SC-70/SOT-323
CASE 463-01 SC-90/SOT-416
CASE 646-06 (TO-116)
CASE 751B-05 SO-16
Scale
Motorola Small-Signal Transistors, FETs Diodes Device Data
EMBOSSED TAPE REEL
SOT-23, SC-59, SC-70/SOT-323, SC-90/SOT-416, SOT-223 SO-16 packages available only Tape Reel. appropriate suffix indicated below order SOT-23, SC-59, SC-70/SOT-323, SOT-223 SO-16 packages. (See Section Packaging additional information). SOT-23: available Tape Reel device title (which already includes "T1" suffix) order inch/3000 unit reel. Replace "T1" suffix device title with "T3" suffix order inch/10,000 unit reel. available Tape Reel device title (which already includes "T1" suffix) order inch/3000 unit reel. Replace "T1" suffix device title with "T3" suffix order inch/10,000 unit reel. available Tape Reel device title (which already includes "T1" suffix) order inch/3000 unit reel. Replace "T1" suffix device title with "T3" suffix order inch/10,000 unit reel. available Tape Reel device title (which already includes "T1" suffix) order inch/1000 unit reel. Replace "T1" suffix device title with "T3" suffix order inch/4000 unit reel. available Tape Reel "R1" suffix device title order inch/500 unit reel. "R2" suffix device title order inch/2500 unit reel.
SC-59:
SC-70/ SOT-323:
SOT-223:
SO-16:
RADIAL TAPE FOLD REEL
TO-92 packages available both bulk shipments Radial Tape Fold Boxes Reels. Fold Boxes Radial Tape Reel best methods capturing devices automatic insertion printed circuit boards. TO-92: available Fold "RLR" suffix appropriate Style code* device title order Fold box. available Radial Tape Reel "RLR" suffix appropriate Style code* device title order Radial Tape Reel. *Refer Section Packaging Style code characters additional information ordering *requirements.
DEVICE MARKINGS/DATE CODE CHARACTERS
SOT-23, SC-59, SC-70/SOT-323, SC-90/SOT-416 packages have device marking date code etched device. generic example below depicts both device marking representation date code that appears SC-70/SOT-323, SC-59 SOT-23 packages.
represents smaller alpha digit Date Code. Date Code indicates actual month which part manufactured.
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Silicon
2N3903 2N3904*
*Motorola Preferred Device
COLLECTOR BASE EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Indicates Data addition JEDEC Requirements. Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX nAdc nAdc
Preferred devices Motorola recommended choices future best overall value.
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3903 2N3904
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain(1) mAdc, Vdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc)
Collector Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc Base Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) Noise Figure mAdc, Vdc, kHz) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 Cobo Cibo
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Pulse Test: Pulse Width (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc) 2N3903 2N3904
Duty Cycle 2.0%.
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3903 2N3904
DUTY CYCLE +10.9 1N916 DUTY CYCLE +10.9
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) CHARGE (pC) Cibo Cobo 5000 3000 2000 1000 IC/IB
REVERSE BIAS VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure Charge Data
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3903 2N3904
COLLECTOR CURRENT (mA) IC/IB RISE TIME (ns) IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
Figure Turn Time
STORAGE TIME (ns) IC/IB IC/IB IC/IB IC/IB
Figure Rise Time
FALL TIME (ns)
IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Storage Time
Figure Fall Time
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE Vdc, 25°C, Bandwidth
NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE
NOISE FIGURE (dB)
SOURCE RESISTANCE
SOURCE RESISTANCE
FREQUENCY (kHz)
SOURCE RESISTANCE OHMS)
Figure
Figure
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3903 2N3904
PARAMETERS
(VCE Vdc, kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos)
CURRENT GAIN
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
INPUT IMPEDANCE OHMS)
Figure Output Admittance
VOLTAGE FEEDBACK RATIO
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
+125°C 55°C +25°C
CURRENT GAIN (NORMALIZED)
COLLECTOR CURRENT (mA)
Figure Current Gain
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) =1.0 VCE(sat) IC/IB VBE(sat) IC/IB COEFFICIENT (mV/
+25°C +125°C
VCE(sat)
55°C +25°C +25°C +125°C 55°C +25°C
VBE(sat)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Silicon
COLLECTOR BASE EMITTER
2N3905 2N3906*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Power Dissipation 60°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C
CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Indicates Data addition JEDEC Requirements. Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX nAdc nAdc
Preferred devices Motorola recommended choices future best overall value.
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3905 2N3906
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc)
Collector Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc Base Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) Noise Figure mAdc, Vdc, kHz) 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Cobo Cibo 10.0
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time (VCC Vdc, mAdc mAdc, (VCC Vdc, Vdc, mAdc, mAdc) 2N3905 2N3906 2N3905 2N3906
Fall Time
Pulse Test: Pulse Width
Duty Cycle 2.0%.
2-10
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3905 2N3906
+9.1 +0.5 10.6 DUTY CYCLE DUTY CYCLE 10.9 1N916
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) CHARGE (pC) Cobo Cibo 5000 3000 2000 1000 IC/IB
REVERSE BIAS (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
IC/IB
Figure Charge Data
IC/IB
FALL TIME (ns)
IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn Time
Figure Fall Time
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-11
2N3905 2N3906
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE Vdc, 25°C, Bandwidth
SOURCE RESISTANCE NOISE FIGURE (dB) SOURCE RESISTANCE
NOISE FIGURE (dB)
SOURCE RESISTANCE
SOURCE RESISTANCE
FREQUENCY (kHz)
SOURCE RESISTANCE OHMS)
Figure
Figure
PARAMETERS
(VCE Vdc, kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos)
CURRENT GAIN
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO INPUT IMPEDANCE OHMS)
Figure Output Admittance
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
2-12
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N3905 2N3906
TYPICAL STATIC CHARACTERISTICS
+125°C 55°C +25°C
CURRENT GAIN (NORMALIZED)
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB +25°C +125°C 55°C +25°C
TEMPERATURE COEFFICIENTS (mV/
VCE(sat)
+25°C +125°C
55°C +25°C
VCE(sat) IC/IB
VBE(sat)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-13
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Silicon
COLLECTOR BASE EMITTER
2N4123 2N4124
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N4123 +150 2N4124 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO nAdc nAdc
2-14
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4123 2N4124
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain(1) mAdc, Vdc) 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 0.95
mAdc, Vdc) Collector Emitter Saturation Voltage(1) mAdc, mAdc) Base Emitter Saturation Voltage(1) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Collector-Base Capacitance MHz) Small-Signal Current Gain mAdc, Vdc, ohm, kHz) Current Gain High Frequency mAdc, Vdc, MHz) 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 Cibo
mAdc, kHz) mAdc, kHz) Noise Figure µAdc, Vdc, ohm, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%.
CAPACITANCE (pF) Cibo TIME (ns)
Cobo 10.0 IC/IB VEB(off) COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (VOLTS)
Figure Capacitance
Figure Switching Times
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-15
2N4123 2N4124
AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE (VCE Vdc, 25°C) Bandwidth
NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE
NOISE FIGURE (dB)
SOURCE RESISTANCE
SOURCE RESISTANCE
FREQUENCY (kHz)
SOURCE RESISTANCE
Figure Frequency Variations
Figure Source Resistance
PARAMETERS
(VCE kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos)
CURRENT GAIN
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO INPUT IMPEDANCE
Figure Output Admittance
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
2-16
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4123 2N4124
STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED) +125°C 55°C +25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VCE(sat) IC/IB COLLECTOR CURRENT (mA) VBE(sat) IC/IB
TEMPERATURE COEFFICIENTS (mV/°C)
55°C +25°C +25°C +125°C +25°C +125°C
VCE(sat)
55°C +25°C
VBE(sat)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-17
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
Silicon
COLLECTOR BASE EMITTER
2N4125
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO nAdc nAdc
2-18
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4125
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain(1) mAdc, Vdc) mAdc, Vdc) Collector Emitter Saturation Voltage(1) mAdc, mAdc) Base Emitter Saturation Voltage(1) mAdc, mAdc) VCE(sat) VBE(sat) 0.95
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Current Gain High Frequency mAdc, Vdc, MHz) Noise Figure µAdc, Vdc, ohm, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. Cibo |hfe|
CAPACITANCE (pF)
Cobo Cibo TIME (ns)
10.0 REVERSE BIAS (VOLTS)
IC/IB VBE(off) COLLECTOR CURRENT (mA)
Figure Capacitance
Figure Switching Times
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-19
2N4125
AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE Vdc, 25°C Bandwidth
NOISE FIGURE (dB) SOURCE RESISTANCE
NOISE FIGURE (dB)
SOURCE RESISTANCE
SOURCE RESISTANCE
SOURCE RESISTANCE -100
FREQUENCY (kHz)
SOURCE RESISTANCE
Figure Frequency Variations
Figure Source Resistance
PARAMETERS
kHz, 25°C
hoe, OUTPUT ADMITTANCE mhos)
CURRENT GAIN
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO INPUT IMPEDANCE
Figure Output Admittance
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
2-20
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4125
STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED) +125°C 55°C +25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS)
VBE(sat) IC/IB
TEMPERATURE COEFFICIENTS (mV/°C)
-0.5 +25°C +125°C -1.0 -1.5 -2.0
VCE(sat)
+25°C +125°C 55°C +25°C
VBE(sat)
55°C +25°C
VCE(sat) IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-21
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
Silicon
COLLECTOR BASE EMITTER
2N4264
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, VEB(off) 0.25 Vdc) (VCE Vdc, VEB(off) 0.25 Vdc, 100°C) Collector Cutoff Current (VCE Vdc, VEB(off) 0.25 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX nAdc µAdc
2-22
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4264
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc, 55°C) mAdc, Vdc) mAdc, Vdc)(1) mAdc, Vdc)(1) Collector Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)(1) Base Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)(1) VCE(sat) VBE(sat) 0.65 0.75 0.95 0.22 0.35
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Output Capacitance (VCB Vdc, MHz, Cibo Cobo
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn-On Time Turn-Off Time Storage Time Total Control Charge (VCC Vdc, VEB(off) Vdc, mAdc, mAdc) (Fig. Test Condition Vdc, mAdc, (IB1 (IB2 (Fig. Test Condition (VCC Vdc, VEB(off) Vdc, mAdc, mAdc) (Fig. Test Condition (VCC Vdc, mAdc, mAdc, mAdc) (Fig. Test Condition (VCC Vdc, mAdc) (Fig. Test Condition (VCC Vdc, mAdc, mAdc) (Fig. Test Condition toff
Pulse Test: Pulse Width Duty Cycle 2.0%.
Figure Switching Time Equivalent Test Circuit
Test Condition CS(max) VBE(off) -1.5 -2.0 VEB(off) toff
3300
10.55 -4.15 10.70 -4.65 6.55 6.35 -4.65 6.55
PULSE WIDTH (t1) DUTY CYCLE
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-23
2N4264
CURRENT GAIN CHARACTERISTICS
CURRENT GAIN 125°C 25°C -15°C 55°C 2N4264
COLLECTOR CURRENT (mA)
Figure Minimum Current Gain
PULSE WIDTH (t1) DUTY CYCLE COPT TIME COPT
Figure Test Circuit NOTE
When transistor held conductive state base current, charge, developed "stored" transistor. written: charge required develop required collector current. This charge primarily function alpha cutoff frequency. charge required charge collector-base feedback capacity. excess charge resulting from overdrive, i.e., operation saturation. charge required turn transistor "on" edge saturation which defined active region charge, IB1tr when transistor driven constant current step (IB1)
Figure Turn-Off Waveform
were suddenly removed, transistor would continue conduct until removed from active regions through external path through internal recombination. Since internal recombination time long compared ultimate capability transistor, charge, opposite polarity, equal magnitude, stored external capacitor, neutralize internal charge considerably reduce turn-off time transistor. Figure shows test circuit Figure turn-off waveform. Given from Figure external worst-case turn-off circuit QT/V, where defined Figure
2-24
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4264
"ON" CONDITION CHARACTERISTICS
VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N4264 25°C
BASE CURRENT (mA)
Figure Collector Saturation Region
Vsat SATURATION VOLTAGE (VOLTS)
IC/IB 25°C
TEMPERATURE COEFFICIENTS (mV/°C)
VBE(sat) VBE(sat)
(25°C 125°C)
VCE(sat)
(25°C 125°C) 55°C 25°C)
VCE(sat)
55°C 25°C)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Saturation Voltage Limits
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-25
2N4264
DYNAMIC CHARACTERISTICS
DELAY TIME (ns) COLLECTOR CURRENT (mA) VEB(off) RISE TIME (ns) 25°C COLLECTOR CURRENT (mA) IC/IB 25°C 125°C
Figure Delay Time
Figure Rise Time
25°C 125°C FALL TIME (ns) IC/IB
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) IC/IB IC/IB 25°C 125°C
STORAGE TIME (ns)
IC/IB
Figure Storage Time
Figure Fall Time
CAPACITANCE (pF) Cibo CHARGE (pC)
1000 COLLECTOR CURRENT (mA) IC/IB 25°C 125°C
Cobo
REVERSE BIAS (Vdc)
Figure Junction Capacitance
Figure Maximum Charge Data
2-26
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Silicon
2N4400 2N4401*
*Motorola Preferred Device
COLLECTOR BASE EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX µAdc µAdc
Preferred devices Motorola recommended choices future best overall value.
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-27
2N4400 2N4401
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) mAdc, Vdc) 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 0.75 0.75 0.95
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc) Collector Emitter Saturation Voltage mAdc, mAdc) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Saturation Voltage mAdc, mAdc) Base Emitter Saturation Voltage mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) 2N4400 2N4401 2N4400 2N4401 µmhos 2N4400 2N4401 10-4 ohms
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc)
Pulse Test: Pulse Width Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
DUTY CYCLE 2.0% DUTY CYCLE 2.0%
Scope rise time *Total shunt capacitance test connectors, oscilloscope
Figure Turn-On Time
Figure Turn-Off Time
2-28
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4400 2N4401
TRANSIENT CHARACTERISTICS
25°C CAPACITANCE (pF) CHARGE (nC) Cobo 100°C REVERSE VOLTAGE (VOLTS) COLLECTOR CURRENT (mA)
IC/IB
Figure Capacitances
Figure Charge Data
TIME (ns) TIME (ns) IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Rise Fall Times
STORAGE TIME (ns) IC/IB FALL TIME (ns)
IC/IB IC/IB
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA)
Figure Storage Time
Figure Fall Time
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-29
2N4400 2N4401
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE Vdc, 25°C Bandwidth
OPTIMUM SOURCE RESISTANCE NOISE FIGURE (dB)
NOISE FIGURE (dB)
0.01 0.02 0.05
SOURCE RESISTANCE (OHMS)
FREQUENCY (kHz)
Figure Frequency Effects
Figure Source Resistance Effects
PARAMETERS Vdc, kHz, 25°C This group graphs illustrates relationship between selected from both 2N4400 2N4401 lines, other parameters this series transistors. same units were used develop correspondingly numobtain these curves, high-gain low-gain unit were bered curves each graph.
INPUT IMPEDANCE (OHMS) CURRENT GAIN 2N4401 UNIT 2N4401 UNIT 2N4400 UNIT 2N4400 UNIT
2N4401 UNIT 2N4401 UNIT 2N4400 UNIT 2N4400 UNIT
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO hoe, OUTPUT ADMITTANCE mhos)
Figure Input Impedance
2N4401 UNIT 2N4401 UNIT 2N4400 UNIT 2N4400 UNIT
2N4401 UNIT 2N4401 UNIT 2N4400 UNIT 2N4400 UNIT
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Voltage Feedback Ratio 2-30
Figure Output Admittance Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4400 2N4401
STATIC CHARACTERISTICS
NORMALIZED CURRENT GAIN 125°C 25°C 55°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
0.01
0.02 0.03
0.05 0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB COEFFICIENT (mV/
VCE(sat)
VCE(sat) IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-31
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
Silicon
2N4402 2N4403*
*Motorola Preferred Device
COLLECTOR BASE EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watt mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX µAdc µAdc
Preferred devices Motorola recommended choices future best overall value.
2-32
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4402 2N4403
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) VBE(sat) 0.75 0.95 0.75
mAdc, Vdc) mAdc, Vdc)(1) mAdc, Vdc)(1) Collector Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) Base Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) 2N4402 2N4403 2N4402 2N4403 µmhos 2N4402 2N4403 10-4 ohms
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc,
Pulse Test: Pulse Width Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE DUTY CYCLE
Scope rise time *Total shunt capacitance test connectors, oscilloscope
Figure Turn-On Time Motorola Small-Signal Transistors, FETs Diodes Device Data
Figure Turn-Off Time 2-33
2N4402 2N4403
TRANSIENT CHARACTERISTICS
25°C CAPACITANCE (pF) 100°C CHARGE (nC) REVERSE VOLTAGE (VOLTS) COLLECTOR CURRENT (mA)
IC/IB
Figure Capacitances
Figure Charge Data
TIME (ns) RISE TIME (ns) VBE(off) VBE(off) IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Rise Time
IC/IB STORAGE TIME (ns) IC/IB
COLLECTOR CURRENT (mA)
Figure Storage Time
2-34
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4402 2N4403
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE Vdc, 25°C Bandwidth
NOISE FIGURE (dB) NOISE FIGURE (dB)
OPTIMUM SOURCE RESISTANCE
0.01 0.02 0.05
SOURCE RESISTANCE (OHMS)
FREQUENCY (kHz)
Figure Frequency Effects
Figure Source Resistance Effects
PARAMETERS Vdc, kHz, 25°C This group graphs illustrates relationship between selected from both 2N4402 2N4403 lines, other parameters this series transistors. same units were used develop correspondingly- obtain these curves, high-gain low-gain unit were numbered curves each graph.
1000 CURRENT GAIN 2N4403 UNIT 2N4403 UNIT 2N4402 UNIT 2N4402 UNIT INPUT IMPEDANCE (OHMS) 2N4403 UNIT 2N4403 UNIT 2N4402 UNIT 2N4402 UNIT
COLLECTOR CURRENT (mAdc)
COLLECTOR CURRENT (mAdc)
Figure Current Gain
VOLTAGE FEEDBACK RATIO 2N4403 UNIT 2N4403 UNIT 2N4402 UNIT 2N4402 UNIT hoe, OUTPUT ADMITTANCE mhos)
Figure Input Impedance
2N4403 UNIT 2N4403 UNIT 2N4402 UNIT 2N4402 UNIT
COLLECTOR CURRENT (mAdc)
COLLECTOR CURRENT (mAdc)
Figure Voltage Feedback Ratio Motorola Small-Signal Transistors, FETs Diodes Device Data
Figure Output Admittance 2-35
2N4402 2N4403
STATIC CHARACTERISTICS
NORMALIZED CURRENT GAIN 125°C 25°C 55°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005
0.01
0.02
0.03
0.05 0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
VOLTAGE (VOLTS)
25°C VBE(sat) IC/IB COEFFICIENT (mV/
VCE(sat) IC/IB
VCE(sat)
VBE(sat)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
2-36
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
Silicon
COLLECTOR BASE EMITTER
2N4410
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Emitter Breakdown Voltage µAdc, Vdc, ohms) Collector Base Breakdown Voltage µAdc, Emitter Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO IEBO 0.01 µAdc µAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-37
2N4410
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Saturation Voltage mAdc, mAdc) Base Emitter Voltage mAdc, Vdc) VCE(sat) VBE(sat) VBE(on)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product(2) mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz, emitter guarded) Emitter-Base Capacitance (VEB Vdc, MHz, collector guarded) |hfe| ftest. CURRENT GAIN 55°C 125°C 25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
2-38
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N4410
COLLECTOR CURRENT 10-1 10-2 10-3 10-4 10-5 125°C
ICES
75°C REVERSE 25°C FORWARD
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
TEMPERATURE COEFFICIENT (mV/
25°C
COLLECTOR CURRENT (mA) 55°C +135°C
VOLTAGE (VOLTS) VBE(sat) IC/IB
VCE(sat)
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
VBE(sat)
Figure "On" Voltages
Figure Temperature Coefficients
10.2 INPUT PULSE DUTY CYCLE 1.0% 0.25 CAPACITANCE (pF) 1N914 Vout Cibo
25°C
Cobo
Values Shown
REVERSE VOLTAGE (VOLTS)
Figure Switching Time Test Circuit
Figure Capacitances
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-39
2N4410
1000 TIME (ns) VEB(off) IC/IB 25°C TIME (ns) 5000 3000 2000 1000 IC/IB 25°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Turn-Off Time
2-40
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
Silicon
COLLECTOR BASE EMITTER
2N5087
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO nAdc nAdc
Preferred devices Motorola recommended choices future best overall value.
(Replaces 2N5086/D)
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-41
2N5087
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) mAdc, Vdc) mAdc, Vdc)(1) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Voltage mAdc, Vdc) VCE(sat) VBE(on) 0.85
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%.
2-42
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE Vdc, 25°C)
NOISE VOLTAGE (nV) BANDWIDTH NOISE CURRENT (pA) FREQUENCY (Hz) FREQUENCY (Hz)
BANDWIDTH
Figure Noise Voltage
Figure Noise Current
NOISE FIGURE CONTOURS
(VCE Vdc, 25°C)
COLLECTOR CURRENT (µA) COLLECTOR CURRENT (µA)
BANDWIDTH SOURCE RESISTANCE (OHMS)
SOURCE RESISTANCE (OHMS)
BANDWIDTH
Figure Narrow Band,
Figure Narrow Band,
SOURCE RESISTANCE (OHMS)
15.7
Noise Figure Defined COLLECTOR CURRENT (µA) log10 4KTRS 4KTRS
Noise Voltage Transistor referred input. (Figure Noise Current Transistor referred input. (Figure Boltzman's Constant (1.38 10-23 j/°K) Temperature Source Resistance (°K) Source Resistance (Ohms)
Figure Wideband Motorola Small-Signal Transistors, FETs Diodes Device Data 2-43
2N5087
TYPICAL STATIC CHARACTERISTICS
125°C 25°C
CURRENT GAIN
55°C 0.003 0.005 0.01 0.02 0.03 0.05 0.07 COLLECTOR CURRENT (mA)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C COLLECTOR CURRENT (mA)
25°C PULSE WIDTH DUTY CYCLE 2.0%
0.002 0.005 0.01 0.02 0.05 BASE CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Collector Saturation Region
Figure Collector Characteristics
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB VBE(on) VCE(sat) IC/IB COLLECTOR CURRENT (mA)
TEMPERATURE COEFFICIENTS (mV/°C)
*APPLIES IC/IB hFE/2 *qVC VCE(sat) 55°C 25°C 25°C 125°C 25°C 125°C
55°C 25°C
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
2-44
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
VBE(off) IC/IB 25°C TIME (ns) 1000 -1.0
IC/IB 25°C
TIME (ns)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
-100
Figure Turn-On Time
CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure Turn-Off Time
25°C CAPACITANCE (pF)
25°C
0.05
COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure Current-Gain Bandwidth Product
Figure Capacitance
INPUT IMPEDANCE COLLECTOR CURRENT (mA) hoe, OUTPUT ADMITTANCE mhos) 25°C
COLLECTOR CURRENT (mA) 25°C
Figure Input Impedance
Figure Output Admittance
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-45
2N5087
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.05 0.02 0.01 SINGLE PULSE P(pk) TIME (ms) FIGURE DUTY CYCLE, t1/t2 CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME (SEE AN-569) ZJA(t) r(t) TJ(pk) P(pk) ZJA(t)
0.01 0.01 0.02
0.05
Figure Thermal Response
COLLECTOR CURRENT (mA) 25°C
25°C 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation. Collector load lines specific circuits must fall below limits indicated applicable curve. data Figure based upon TJ(pk) 150°C; variable depending upon conditions. Pulse curves valid duty cycles provided TJ(pk) 150°C. TJ(pk) calculated from data Figure high case ambient temperatures, thermal limitations will reduce power than handled values less than limitations imposed second breakdown.
Figure Active-Region Safe Operating Area
COLLECTOR CURRENT (nA) 10-1 10-2 ICEO
DESIGN NOTE: THERMAL RESPONSE DATA
train periodical power pulses represented model shown Figure Using model device thermal response normalized effective transient thermal resistance Figure calculated various duty cycles. find ZJA(t), multiply value obtained from Figure steady state value RJA. Example: 2N5087 dissipating watts peak under following conditions: 0.2) Using Figure pulse width 0.2, reading r(t) 0.22. peak rise junction temperature therefore r(t) P(pk) 0.22 88°C. more information, AN-569.
ICBO ICEX VBE(off)
JUNCTION TEMPERATURE (°C)
Figure Typical Collector Leakage Current
2-46
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Silicon
COLLECTOR BASE EMITTER
2N5088 2N5089
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5088 +150 2N5089 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA(1) RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) mAdc, Collector Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, Emitter Cutoff Current (VEB(off) Vdc, (VEB(off) Vdc, measured with device soldered into typical printed circuit board. Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO nAdc nAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-47
2N5088 2N5089
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 1200
mAdc, Vdc) mAdc, Vdc)(2) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Voltage mAdc, Vdc)(2)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5088 2N5089 2N5088 2N5089 1400 1800
IDEAL TRANSISTOR
Figure Transistor Noise Model
2-48
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5088 2N5089
NOISE CHARACTERISTICS
(VCE Vdc, 25°C) NOISE VOLTAGE
BANDWIDTH NOISE VOLTAGE (nV) NOISE VOLTAGE (nV) BANDWIDTH
FREQUENCY (Hz) 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure Effects Frequency
NOISE CURRENT (pA) NOISE FIGURE (dB)
Figure Effects Collector Current
BANDWIDTH
BANDWIDTH 15.7
FREQUENCY (Hz)
SOURCE RESISTANCE (OHMS)
Figure Noise Current NOISE DATA
TOTAL NOISE VOLTAGE (nV) SOURCE RESISTANCE (OHMS) BANDWIDTH NOISE FIGURE (dB)
Figure Wideband Noise Figure
BANDWIDTH SOURCE RESISTANCE (OHMS)
Figure Total Noise Voltage
Figure Noise Figure
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-49
2N5088 2N5089
CURRENT GAIN (NORMALIZED) 125°C 25°C 0.01 55°C
0.02
0.03
0.05
COLLECTOR CURRENT (mA)
Figure Current Gain
25°C VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/
25°C 125°C
VCE(sat) IC/IB 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
55°C 25°C 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure "On" Voltages
CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure Temperature Coefficients
CAPACITANCE (pF) 25°C
COLLECTOR CURRENT (mA) 25°C
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
Figure Current-Gain Bandwidth Product
2-50
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Silicon
COLLECTOR BASE EMITTER
2N5209 2N5210
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage mAdc, Collector Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, V(BR)CEO V(BR)CBO ICBO IEBO nAdc nAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-51
2N5209 2N5210
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 0.85
mAdc, Vdc) mAdc, Vdc)(1) Collector Emitter Saturation Voltage mAdc, mAdc) Base Emitter Voltage mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210
IDEAL TRANSISTOR
Figure Transistor Noise Model
2-52
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5209 2N5210
NOISE CHARACTERISTICS
(VCE Vdc, 25°C) NOISE VOLTAGE
BANDWIDTH NOISE VOLTAGE (nV) NOISE VOLTAGE (nV) BANDWIDTH
FREQUENCY (Hz) 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure Effects Frequency
NOISE CURRENT (pA) NOISE FIGURE (dB)
Figure Effects Collector Current
BANDWIDTH
BANDWIDTH 15.7
FREQUENCY (Hz)
SOURCE RESISTANCE (OHMS)
Figure Noise Current NOISE DATA
TOTAL NOISE VOLTAGE (nV) SOURCE RESISTANCE (OHMS) BANDWIDTH NOISE FIGURE (dB)
Figure Wideband Noise Figure
BANDWIDTH SOURCE RESISTANCE (OHMS)
Figure Total Noise Voltage
Figure Noise Figure
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-53
2N5209 2N5210
CURRENT GAIN (NORMALIZED) 125°C 25°C 0.01 55°C
0.02
0.03
0.05
COLLECTOR CURRENT (mA)
Figure Current Gain
25°C VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/
25°C 125°C
VCE(sat) IC/IB 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
55°C 25°C 0.01 0.02 0.05 COLLECTOR CURRENT (mA)
Figure "On" Voltages
CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure Temperature Coefficients
CAPACITANCE (pF) 25°C
COLLECTOR CURRENT (mA) 25°C
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
Figure Current-Gain Bandwidth Product
2-54
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Silicon
2N5400 2N5401*
*Motorola Preferred Device
COLLECTOR BASE EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5400 +150 2N5401 Unit mAdc mW/°C Watts mW/°C
CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, (VCB Vdc, 100°C) (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%.
Preferred devices Motorola recommended choices future best overall value.
V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO 2N5400 2N5401 2N5400 2N5401 IEBO
nAdc µAdc nAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-55
2N5400 2N5401
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 VCE(sat) VBE(sat)
mAdc, Vdc)
mAdc, Vdc) Collector Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) Base Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5400 2N5401 2N5400 2N5401 Cobo
2-56
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5400 2N5401
125°C CURRENT GAIN 55°C COLLECTOR CURRENT (mA) 25°C
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
COLLECTOR CURRENT 125°C 75°C 10-1 10-2 10-3 REVERSE 25°C FORWARD ICES
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-57
2N5400 2N5401
TEMPERATURE COEFFICIENT (mV/ VOLTAGE (VOLTS) COLLECTOR CURRENT (mA) VCE(sat) IC/IB VBE(sat) IC/IB 25°C -0.5 -1.0 -1.5 -2.0 -2.5 VBE(sat) COLLECTOR CURRENT (mA) VCE(sat) 55°C 135°C
Figure "On" Voltages
Figure Temperature Coefficients
10.2 INPUT PULSE DUTY CYCLE 1.0% 0.25 1N914 Vout
CAPACITANCE (pF)
Cibo
25°C
Cobo
Values Shown
REVERSE VOLTAGE (VOLTS)
Figure Switching Time Test Circuit
Figure Capacitances
1000 TIME (ns)
2000 IC/IB 25°C TIME (ns) 1000 IC/IB 25°C
VBE(off)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Turn-Off Time
2-58
Motorola Small-Signal Transistors, FETs Diodes Device Data
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Silicon
COLLECTOR BASE EMITTER
2N5550 2N5551*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5550 +150 2N5551 Unit mAdc mW/°C Watts mW/°C
CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage µAdc, Emitter Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, (VCB Vdc, 100°C) (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%.
Preferred devices Motorola recommended choices future best overall value.
V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO 2N5550 2N5551 2N5550 2N5551 IEBO
nAdc µAdc nAdc
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-59
2N5550 2N5551
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 0.15 0.25 0.20
mAdc, Vdc)
mAdc, Vdc) Collector Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) Base Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5550 2N5551 2N5550 2N5551 Cobo Cibo
2-60
Motorola Small-Signal Transistors, FETs Diodes Device Data
2N5550 2N5551
CURRENT GAIN 55°C 125°C 25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
Motorola Small-Signal Transistors, FETs Diodes Device Data
2-61
2N5550 2N5551
COLLECTOR CURRENT 10-1 10-2 10-3 10-4 10-5 125°C
ICES
75°C REVERSE 25°C FORWARD
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
TEMPERATURE COEFFICIENT (mV/
25°C
COLLECTOR CURRENT (mA) 55°C +135°C
VOLTAGE (VOLTS) VB
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