HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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Spec. HE6452 Issued Date 1993.02.10 Revised Date 2002.04.18 Page
HTL195
EPITAXIAL PLANAR TRANSISTOR
Description
HTL195 designed high voltage power switching applications especially telephone telecommunication circuits.
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage -500 VCEO Collector Emitter Voltage -500 Collector Current -300
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. -500 -500 Typ. Max. -200 -500 -900 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 VCB=-500V, IE=0 VCE=-100V, IB=0 VEB=-6V, IC=0 IC=-20mA, IB=-2mA IC=-80mA, IB=-4mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-20mA VCE=-10V, IC=-80mA VCE=-20V, IE=-10mA, f=1MHz VCB=-20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HTL195
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6452 Issued Date 1993.02.10 Revised Date 2002.04.18 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=10V
VCE(sat) IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=20IB 1000
Saturation Voltage Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
VBE(s IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance Reverse-Biased Voltage
1000 10000
Safe Operating Area
Capacitance (Pf)
Collector Current (mA)
1000
PT=1ms PT=100ms PT=1s
1000 10000
Reverse Biased Voltage
Forward Voltage
HTL195
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HE6452 Issued Date 1993.02.10 Revised Date 2002.04.18 Page
Marking:
Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTL195
HSMC Product Specification

HTL195 EPITAXIAL PLANAR TRANSISTOR Description HTL195 d

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