HSB772 EPITAXIAL PLANAR TRANSISTOR Description HSB772 d

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HSB772 EPITAXIAL PLANAR TRANSISTOR Description HSB772 d

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Spec. HE6605 Issued Date 1993.05.15 Revised Date 2002.05.08 Page
HSB772
EPITAXIAL PLANAR TRANSISTOR
Description
HSB772 designed using output stage audio amplifier, voltage regulator, DC-DC converter relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current (DC) Collector Current (Pulse) Base Current (DC) -0.6
Electrical Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 Min. Typ. -0.3 Max. -0.5 Unit Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE2
Rank Range 100-200 160-320 200-400
HSB772
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6605 Issued Date 1993.05.15 Revised Date 2002.05.08 Page
Saturation Voltage Collector Current
10000 VCE(s IC=5IB
Saturation Voltage (mV)
1000
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=10IB
Saturation Voltage Collector Current
10000 VCE(sat) IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=40IB 1000
Saturation Voltage Collector Current
10000 VBE(sat) IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HSB772
HSMC Product Specification
Spec. HE6605 Issued Date 1993.05.15 Revised Date 2002.05.08 Page
Safe Operating Area
PT=1mS
Power Derating
PD(W), Power Dissipation
PT=100mS
Collector Current-IC
PT=1S
Forward Biased Voltage
Ambient Temperature
HSB772
HSMC Product Specification
TO-126ML Dimension
Marking:
Spec. HE6605 Issued Date 1993.05.15 Revised Date 2002.05.08 Page
Date Code
Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension tolerance based Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772
HSMC Product Specification

HSB772 EPITAXIAL PLANAR TRANSISTOR Description HSB772 d

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