FC13 N-Channel Junction Silicon Low-Frequency General-Purpos

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FC13 N-Channel Junction Silicon Low-Frequency General-Purpos

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Ordering number:EN4336
FC13
N-Channel Junction Silicon
Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications
Features
Composite type with FETs contained package currently use, improving mounting efficiency greatly. FC13 formed with chips, being equivalent 2SK303, placed package. Excellent thermal equilibrium pair capability especially suited differential amp.
Package Dimensions
unit:mm 2095A
[FC13]
Electrical Connection
1:Source1 2:Drain1 3:Gate2 4:Source2 5:Drain2 6:Gate1 SANYO:CP6
Specifications
Absolute Maximum Ratings 25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS Tstg 1unit Conditions Ratings +150 Unit
Electrical Characteristics 25°C
Parameter Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Voltage Drop Drain Current Drain Current Ratio Forward Transfer Admittance Forward Transfer Admittance Ratio Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Ciss Crss RDS(on) Symbol V(BR)DGD IG=-10µA, VDS=0 IGSS VGS=-20V, VDS=0 VGS(off) IDSS VDS=10V, ID=1µA VGS(small/large), VDS=10V, ID=1mA VDS=10V, VGS=0 VDS=10V, IDSS(small/large) VDS=10V, VGS=0, f=1kHz VDS=10V, (small/large) VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10mV, VGS=0 1.2* Conditions Ratings -1.0 -0.3 -0.9 -2.5 6.0* Unit
specifications shown above each individual transistor. Note*:The FC13 classified FET1 IDSS follows
Marking:13 IDSS rank:D,E
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/3
FC13
No.4336-2/3
FC13
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.4336-3/3

FC13 N-Channel Junction Silicon Low-Frequency General-Purpos

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