OptiMOS=Small-Signal-Transistor Feature N-Channel Enhancement mod

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OptiMOS=Small-Signal-Transistor Feature N-Channel Enhancement mod

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BSS670S2L
OptiMOS=Small-Signal-Transistor
Feature N-Channel Enhancement mode Logic Level
Product Summary DS(on)
0.54
SOT-23
VPS05161
Drain
Type BSS670S2L
Package SOT-23
Ordering Code Q67042-S4052
Marking
Gate pin1 Source
Maximum Ratings,at unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol
Value 0.54 0.43
Unit
Pulsed drain current
TA=25°C
puls Ptot Tstg
0.36 -55. +150 55/150/56
Gate source voltage Power dissipation
TA=25°C
Operating storage temperature climatic category; 68-1
Page
2001-07-19
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction soldering point (Pin version, device PCB:
min. footprint cooling area
BSS670S2L
Symbol min. RthJS RthJA
Values typ. max.
Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
=0V, =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on)
Values typ. max.
Unit
Gate threshold voltage,
=2.7µA
Zero gate voltage drain current
=55V, =0V, =25°C =55V, =0V, =150°C
0.01
Gate-source leakage current
=20V,
=4.5V, ID=270mA
Drain-source on-state resistance
=10V, =270mA
1Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air.
Page
2001-07-19
Drain-source on-state resistance
BSS670S2L
Electrical Characteristics, unless otherwise specified Parameter Dynamic Characteristics
=0.54A
Symbol
Conditions min.
Values typ. max.
Unit
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Ciss Coss Crss td(on) td(off)
=0V, VDS=25V, f=1MHz
=30V, =4.5V,
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
=40V, =0.54A, =40V, =0.54A
V(plateau) =40V, ID=0.54A
Reverse Diode Inverse diode continuous forward current
Inverse diode direct current, pulsed
TA=25°C
Inverse diode forward voltage
Reverse recovery time Reverse recovery charge
=0V, =0.54A =30V, /dt=100A/µs
Page
=0.54A, RG=130
Transconductance
2*ID*RDS(on)max
0.09
0.11
0.38
2001-07-19
BSS670S2L
Power dissipation
Ptot
0.38
BSS670S2L
Drain current
parameter:
BSS670S2L
0.32 0.28
0.45
Ptot
0.24 0.16 0.12 0.08
0.35 0.25 0.15 0.04 0.05
Safe operating area
Transient thermal impedance
ZthJS
parameter
BSS670S2L
parameter
BSS670S2L
23.0µs
thJS
0.50 0.20
single pulse
Page
0.10 0.05 0.02 0.01
2001-07-19
BSS670S2L
Typ. output characteristic
(VDS Tj=25°C
Typ. drain-source resistance
RDS(on)
parameter:
parameter:
1200
RDS(on)
1100 1000
3.5V
Typ. transfer characteristics
RDS(on)max parameter:
Typ. forward transconductance
f(ID Tj=25°C
parameter:
Page
3.5V 4.5V
4.5V
1500
2001-07-19
BSS670S2L
Drain-source on-state resistance
RDS(on)
Typ. gate threshold voltage
VGS(th) (Tj)
parameter
1900
BSS670S2L
parameter:
1600
RDS(on)
1200 1000
Typ. capacitances
(VDS)
Forward character. reverse diode
(VSD
parameter: =0V,
parameter:
BSS670S2L
Coss
Ciss
Crss
(98%) (98%)
Page
1400
GS(th)
2001-07-19
BSS670S2L
Typ. gate charge
(QGate
Drain-source breakdown voltage
V(BR)DSS
parameter: 0.54 pulsed
BSS670S2L
parameter: ID=10
BSS670S2L
V(BR)DSS
QGate
Page
2001-07-19
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
BSS670S2L
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2001-07-19

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