M3D379 BLF1048 power LDMOS transistor Preliminary specificat

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M3D379 BLF1048 power LDMOS transistor Preliminary specificat

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M3D379
BLF1048 power LDMOS transistor
Preliminary specification 1999
Philips Semiconductors
Preliminary specification
power LDMOS transistor
FEATURES High power gain Easy power control Excellent ruggedness Source underside eliminates isolators, reducing common mode inductance Designed broadband operation GHz). APPLICATIONS Communication transmitter applications frequency range.
MBK394
BLF1048
PINNING SOT502A drain gate source, connected flange DESCRIPTION
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated 2-lead flange package (SOT502A) with ceramic cap. common source connected mounting flange.
view
Fig.1 Simplified outline.
QUICK REFERENCE DATA performance common source test circuit. MODE OPERATION class-AB (2-tone) class-AB (1-tone) (MHz) 960; 960.1 CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. (PEP) (dB) (dBc)
1999
Philips Semiconductors
Preliminary specification
power LDMOS transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Tstg PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CONDITIONS MIN.
BLF1048
MAX. +150
UNIT
THERMAL CHARACTERISTICS SYMBOL Note Determined under specified operating conditions, based maximum peak junction temperature. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGSth VGSth MIN. TYP. MAX. UNIT PARAMETER thermal resistance from junction heatsink CONDITIONS Ptot note VALUE 1.15 UNIT
APPLICATION INFORMATION performance common source class-AB circuit. 1.15 K/W, unless otherwise specified. MODE OPERATION class-AB (2-tone) class-AB (1-tone) (MHz) 960; 960.1 (PEP) (dB) (dBc)
Ruggedness class-AB operation BLF1048 capable withstanding load mismatch corresponding VSWR through phases under following conditions: rated load power.
1999
Philips Semiconductors
Preliminary specification
power LDMOS transistor
PACKAGE OUTLINE
BLF1048
Flanged LDMOST package; mounting holes; leads
SOT502A
scale
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.99 0.186 0.157 12.83 12.57 0.15 0.08 9.50 9.30 9.50 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 1.345 1.335 9.91 9.65 0.390 0.380 0.25 0.01 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.374 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-30 99-06-07
1999
Philips Semiconductors
Preliminary specification
power LDMOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF1048
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors worldwide company
Argentina: South America Australia: Figtree Drive, HOMEBUSH, 2140, Tel. 9704 8141, Fax. 9704 8139 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1248, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 0733, Fax. +375 0773 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 9211, Fax. +359 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 0087 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Sydhavnsgade 1780 COPENHAGEN Tel. 3333, Fax. 3905 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 6158 0920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 4099 6161, Fax. 4099 6427 Germany: D-20097 HAMBURG, Tel. 2353 Fax. 2353 6300 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Philips Development Corporation, Semiconductors Division, Gedung Philips, Buncit Raya Kav.99-100, JAKARTA 12510, Tel. 0040 ext. 2501, Fax. 0080 Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Casati, 20052 MONZA (MI), Tel. 6838, 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. 3740 5130, Fax. 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381, +9-5 0087 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Pakistan: Singapore Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 319762, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 58088 Newville 2114, Tel. 5401, Fax. 5398 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 5985 2000, Fax. 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2741 Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2886, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. 81260 Umraniye, ISTANBUL, Tel. 1500, Fax. 1813 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 0087 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 5344, Fax.+381 5777
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
125108/00/02/pp6
Date release: 1999
Document order number:
9397 06121

M3D379 BLF1048 power LDMOS transistor Preliminary specificat

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