DCR1020SF Phase Control Thyristor Advance Information Replac

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DCR1020SF Phase Control Thyristor Advance Information Replac

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DCR1020SF
DCR1020SF
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4245-4.0 DS4245-5.0 July 2001
FEATURES
Double Side Cooling High Surge Capability
PARAMETERS VDRM 6500V IT(AV) 640A ITSM 10700A dVdt 1000V/µs dI/dt 100A/µs
APPLICATIONS
High Power Drives High Voltage Power Supplies Motor Control Welding Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM Conditions
DCR1020SF65 6500 DCR1020SF64 6400 DCR1020SF63 6300 DCR1020SF62 6200 DCR1020SF61 6100 DCR1020SF60 6000 Lower voltage grades available.
125°C, IDRM IRRM 150mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively
Outline type code: Package Details further information. Fig. Package outline
ORDERING INFORMATION
When ordering, select required part number shown Voltage Ratings selection table. example: DCR1020SF63 Note: Please complete part number when ordering quote this number future correspondance relating your order.
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DCR1020SF
CURRENT RATINGS
Tcase 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load 1005 Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load
CURRENT RATINGS
Tcase 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) Mean on-state current value Continuous (direct) on-state current Half wave resistive load
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DCR1020SF
SURGE RATINGS
Symbol ITSM ITSM Parameter Surge (non-repetitive) on-state current fusing Surge (non-repetitive) on-state current fusing Conditions 10ms half sine; Tcase 125oC VRRM sine 10ms half sine; Tcase 125oC Max. 0.36 10.7 0.562 Units
THERMAL MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance junction case Single side cooled Cathode Clamping force 19.5kN with mounting compound On-state (conducting) Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force 18.0 22.0
Min. Anode
Max. 0.022 0.038 0.052 0.004 0.008
Units
Double side Single side
Rth(c-h)
Thermal resistance case heatsink
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DCR1020SF
DYNAMIC CHARACTERISTICS
Symbol VIRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse off-state current Maximum linear rate rise off-state voltage Conditions 1800A peak, Tcase 25oC VRRM/VDRM, Tcase 125oC VDRM 125oC. From VDRM 1000A Gate source 30V, 0.5µs. 125oC. 125oC 125oC VDRM, Gate source 30V, Rise time 0.5µs, 25oC Repetitive 50Hz Non-repetitive Typ. Max. 1000 1.92 Units V/µs A/µs A/µs
dI/dt
Rate rise on-state current
VT(TO)
Threshold voltage On-state slope resistance Delay time
1000A, 1ms, 125°C,
Turn-off time 100V, dIRR/dt 10A/µs, VDRM, dVDR/dt 25V/µs 25oC, 25oC
Latching current Holding current
GATE TRIGGER CHARACTERISTICS RATINGS
Symbol VFGM VFGN VRGM IFGM PG(M) PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect cathode Gate Characteristics curve/table Conditions VDRM Tcase 25oC VDRM Tcase 25oC VDRM Tcase 125oC Anode positive with respect cathode Anode negative with respect cathode Typ. Max. 0.25 0.25 Units
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DCR1020SF
CURVES
2000 125°C 1800
125°C
1600
Instantaneous on-state current,
1400
1200
1000
Instantaneous on-state current,
Instantaneous on-state voltage,
Instantaneous on-state voltage,
Fig.2 Maximum (limit) on-state characteristics VEquation:V= (IT) C.IT+D.IT Where
Fig.3 Maximum (limit) on-state characteristics 0.25863 0.322589 0.002564 -0.061059 these values valid 125°C 100A 2000A
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DCR1020SF
2500
2000
Power loss
1500
Power loss
1000 Conduction angle 180° 120° Mean on-state current, IT(AV)
Conduction angle 180° 120° Mean on-state current, IT(AV)
Fig.4 Sine wave power dissipation curves
Fig.5 Sine wave power dissipation curves
2500
2000
Power loss
1500
Power loss
1000 Conduction angle D.C. 180° 120° Mean on-state current, IT(AV) 1000
Conduction angle D.C. 180° 120° Mean on-state current, IT(AV)
Fig.6 Square wave power dissipation curves 6/10
Fig.7 Square wave power dissipation curves
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DCR1020SF
Upper limit Lower limit
Gate trigger voltage,
125°C Gate trigger current, Fig.8 Gate characteristics 25°C -40°C Table gives pulse power Watts Pulse Width 1000 10000 Frequency
Preferred gate drive area
Upper Limit Lower Limit 100W
Gate trigger voltage,
Gate trigger current,
Fig.9 Gate characteristics
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DCR1020SF
10000
Peak reverse recovery current,
Total stored charge, QRA3 (µC)
Conditions: 125°C 550A 100V
1000
Conditions: 125°C 550A 100V
1000
QRA3
dI/dt
Rate decay on-state current, dI/dt (A/µs)
Rate decay on-state current, dI/dt (A/µs)
Fig.11 Reverse recovery current
Fig.10 Stored charge
Thermal Impedance junction case (°C/W)
Peak half sine wave on-state current (kA)
Anode side cooled
Double side cooled 0.01
value (A2s 106)
Conduction
Effective thermal resistance Junction case °C/W Double side 0.022 0.024 0.026 0.027 Anode side 0.038 0.040 0.042 0.043
d.c. Halfwave phase 120° phase
0.001 0.001
0.01
Cycles 50Hz Duration
Time
Fig.12 Surge (non-repetitive) on-state current time (with VRRM Tcase 125°C)
Fig.13 Transient thermal impedance junction case
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DCR1020SF
PACKAGE DETAILS
further package information, please contact your nearest Customer Service Centre. dimensions unless stated otherwise. SCALE.
Hole deep both electrodes)
Cathode
Cathode
Gate
Anode
Nominal weight: 450g Clamping force: 19.5kN Lead length: 420mm Lead terminal connector: ring Package outline type code:
27.0 25.4
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DCR1020SF
POWER ASSEMBLY CAPABILITY
Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group continues offer high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require correct clamping force ensure their safe operation. PACS range includes varied selection pre-loaded clamps suit manufactured devices. Types available include cube clamps single side cooling 23mm 30mm discs, clamps right 83kN 100mm thyristors diodes. Clamps available single double side cooling, with high insulation versions high voltage assemblies. Please refer application note device clamping, AN4839
HEATSINKS
Power Assembly group proprietary range extruded aluminium heatsinks. They have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln. Lincolnshire. 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Bank Street, Suite 410, Ottawa, Ontario, Canada, Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: (0)1 Fax: (0)1 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Scandinavia Rest World Tel: (0)1522 500500. Fax: (0)1522 500020 SALES OFFICES Mainland Europe Tel: (0)1 Fax: (0)1 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) Tel: (949) 733-3005. Fax: (949) 733-2986. Scandinavia Rest World Tel: (0)1522 500500. Fax: (0)1522 500020 These offices supported Representatives Distributors many countries world-wide. Dynex Semiconductor 2001 Publication DS4245-5 Issue July 2001 TECHNICAL DOCUMENTATION RESALE. PRINTED UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets right hard corner front page, indicate product status. annotations follows:Target Information: This most tentative form information represents very preliminary specification. actual design work product been started. Preliminary Information: product design development. datasheet represents product understood details change. Advance Information: product design complete final characterisation volume production well hand. Annotation: product parameters fixed product available datasheet specification.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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DCR1020SF Phase Control Thyristor Advance Information Replac

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