Complementary Silicon Power Transistor SEMICONDUCTOR TECHNICAL DA

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Complementary Silicon Power Transistor SEMICONDUCTOR TECHNICAL DA

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Collector-Emitter Saturation Voltage (Max) High Good Frequency Response Leakage Current general purpose driver medium power output stages switching applications.
Complementary Silicon Power Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
(REPLACES D44C) Current Gain (VCE Vdc, Adc) (VCE Vdc, Adc) (VCE Vdc, Adc) Total Power Dissipation 25_C Total Power Dissipation 25_C Maximum Lead Temperature Soldering Purposes: from Case Seconds Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Collector Current Continuous Peak Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage
Duty Cycle 50%.
Characteristic
Characteristic
Rating
Symbol
Symbol
Symbol
Tstg
VCEO
VCES
AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS
Value
1.67
CASE 221A-06 TO-220AB
D45C
Order this document D45C/D
Watts W/_C
_C/W
_C/W
Unit
Unit
Unit
D45C
SWITCHING TIMES DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Fall Time Adc, Adc)
Storage Time Adc, Adc)
Delay Rise Times Adc, Adc)
Gain Bandwidth Product Vdc, MHz)
Collector Capacitance (VCB Vdc, MHz)
Base-Emitter Saturation Voltage Adc, mAdc)
Collector-Emitter Saturation Voltage Adc, mAdc)
Emitter Cutoff Current (VEB Vdc)
Collector Cutoff Current (VCE Rated VCES,
hFE, CURRENT GAIN Characteristic 25°C COLLECTOR CURRENT (AMPS) 0.04 0.07
Figure Typical Current Gain
COLLECTOR CURRENT (AMPS)
0.01
0.05 0.03 0.02
VCE(sat)
VBE(sat)
Symbol
Motorola Bipolar Power Transistor Device Data
IEBO ICES
Figure Maximum Rated Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70°C DUTY CYCLE 0.135 0.85 Unit
D45C
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
STYLE
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE
Motorola Bipolar Power Transistor Device Data
D45C
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*D45C/D*
D45C/D

Complementary Silicon Power Transistor SEMICONDUCTOR TECHNICAL DA

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