Silicon N-Channel MOSFET Triode high-frequency stages preferably appli

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Silicon N-Channel MOSFET Triode high-frequency stages preferably appli

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BF999
Silicon N-Channel MOSFET Triode high-frequency stages preferably applications
Storage temperature Channel temperature
Thermal Resistance Channel soldering point1)
1For calculation thJA please refer Application Note Thermal Resistance
Total power dissipation,
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF999
Maximum Ratings Parameter
Marking
Configuration
Package SOT2
Symbol
Value
Unit
Drain-source voltage Drain current Gate-source peak current
IGSM Ptot Tstg
Rthchs
Jun-28-2001
BF999
Electrical Characteristics unless otherwise specified. Parameter characteristics Drain-source breakdown voltage
Symbol min. V(BR)DS V(BR)GSS IGSS
Values typ. max.
Unit
Drain current Gate-source pinch-off voltage
characteristics Forward tranconductance Gate input capacitance Reverse tranfer capacitance Output capacitance Power gain Noise figure Cdss Cgss
Gate-source leakage current
Gate-source breakdown voltage
IDSS
Jun-28-2001
BF999
Total power dissipation Ptot f(TS)
Output characteristics (VDS)
EHT07308
-0.2
-0.4 -0.6
Gate transconductance (VGS)
Drain current (VGS)
EHT07309
EHT07310
Jun-28-2001
BF999
Gate input capacitance Cgss (VGS
Output capacitance
Cgss
EHT07311
Cdss
EHT07312
Reverse transfer capacitance
(VDS)
EHT0731
Gate input admittance (common-source)
EHT07314
g11s
Jun-28-2001
BF999
Gate forward transfer admittance y21s (common-source)
EHT07315
Output admittance (common-source)
EHT07316
Test circuit power gain noise figure
Input
Output
BB515
BB515
VG1S
Vtun
Vtun
EHM07024
Jun-28-2001

Silicon N-Channel MOSFET Triode high-frequency stages preferably appli

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