Silicon Planar Transistor Applications UHF/VHF uncontrolled
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BF979
Silicon Planar Transistor
Applications
UHF/VHF uncontrolled prestages with noise modulation.
Features
High cross modulation performance High power gain
noise High reverse attenuation
9308
13623
BF979 Marking: BF979 Plastic case Collector, Base, Emitter
Absolute Maximum Ratings
Tamb 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol -VCBO -VCEO -VEBO Ptot Tstg Value +150 Unit
Tamb
Maximum Thermal Resistance
Tamb 25_C, unless otherwise specified Parameter Test Conditions Junction ambient glass fibre printed board 1.5) plated with 35mm Symbol RthJA Value Unit
Document Number 85006 Rev. 20-Jan-99
www.vishay.com
BF979
Vishay Semiconductors Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage forward current transfer ratio Test Conditions -VCE -VCB -VEB -VCE Symbol Unit -ICES -ICBO -IEBO -V(BR)CEO
Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Transition frequency Transition frequency Collector-base capacitance Noise figure Power gain Collector current Gpbmax Test Conditions -VCE -VCE -VCB -VCE -VCE -VCE Symbol 1750 1300 Unit
Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation
12845
2100 Transition Frequency 1800 1500 1200
12848
-VCB=10V f=300MHz
Tamb Ambient Temperature
Collector Current
Figure Total Power Dissipation Ambient Temperature
Figure Transition Frequency Collector Current
www.vishay.com
Document Number 85006 Rev. 20-Jan-99
BF979
Collector Base Capacitance
12876
-VCB Collector Base Voltage
Figure Collector Base Capacitance Collector Base Voltage
Dimensions BF979
12243
Document Number 85006 Rev. 20-Jan-99
www.vishay.com
BF979
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
www.vishay.com
Document Number 85006 Rev. 20-Jan-99
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