BF1108; BF1108R Silicon RF-switches Product specification Superse

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BF1108; BF1108R Silicon RF-switches Product specification Superse

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BF1108; BF1108R Silicon RF-switches
Product specification Supersedes data 1999 1999
Philips Semiconductors
Product specification
Silicon RF-switches
FEATURES Specially designed loss RF-switching GHz. APPLICATIONS Various switching applications such Passive loop through tuner Transceiver switching. DESCRIPTION Combination depletion type field-effect transistor bandswitching diode SOT143B (BF1108) SOT143R (BF1108R) package. loss high isolation capabilities these devices provide excellent switching functions. gate MOSFET isolated from ground with diode, resulting losses. Integrated diodes between gate source between gate drain protect against excessive input voltage surges. PINNING Note Drain source interchangeable. QUICK REFERENCE DATA SYMBOL s21(on)2 s21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CONDITIONS CAUTION DESCRIPTION gate FET; anode diode cathode diode source; note drain; note
Marking code: NHp. Marking code: NGp. view
handbook, columns
BF1108; BF1108R
MSB014
Fig.1 Simplified outline (SOT143B).
handbook, columns
view
MSB035
Fig.2 Simplified outline (SOT143R).
MIN.
TYP.
MAX.
UNIT
This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B.
1999
Philips Semiconductors
Product specification
Silicon RF-switches
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Diode Tstg continuous reverse voltage continuous forward current drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current PARAMETER
BF1108; BF1108R
MIN.
MAX.
UNIT
Diode storage temperature junction temperature +150
THERMAL CHARACTERISTICS SYMBOL Note Soldering point gate anode diode lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSX IGSS RDSon Diode forward voltage reverse current gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current drain-source on-state resistance PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER CONDITIONS VALUE UNIT
thermal resistance from junction soldering point note
Tamb
1999
Philips Semiconductors
Product specification
Silicon RF-switches
DYNAMIC CHARACTERISTICS Common cathode; Tamb SYMBOL Diode s21(on)2 losses (on-state) note s21(off)2 isolation (off-state) RDSon Diode Notes diode forward current. diode capacitance diode forward resistance MHz; MHz; note drain-source on-resistance input capacitance; note output capacitance; note PARAMETER CONDITIONS
BF1108; BF1108R
MIN.
TYP. 0.65 0.65
MAX.
UNIT
series connection Cgc; series connection Cgc. Guaranteed basis; inspection level 1.0.
handbook, halfpage
MBL027
SOT143B
SOT143R
Fig.3 Simplified diagram.
1999
Philips Semiconductors
Product specification
Silicon RF-switches
BF1108; BF1108R
handbook, halfpage
MGS357
handbook, halfpage
MGS358
21(on) (dB)
|s21(off)| (dB)
(MHz) 1200
(MHz)
1200
(diode forward current); Measured test circuit (Fig.6).
(diode forward current); Measured test circuit (Fig.6).
Fig.4
Losses (on-state) function frequency; typical values.
Fig.5
Isolation (off-state) function frequency; typical values.
handbook, full pagewidth
output
BF1108/BF1108R input
MBL028
On-state: Off-state:
Fig.6 Test circuit.
1999
Philips Semiconductors
Product specification
Silicon RF-switches
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1108; BF1108R
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
Silicon RF-switches
BF1108; BF1108R
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1999
Philips Semiconductors
Product specification
Silicon RF-switches
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF1108; BF1108R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors
Product specification
Silicon RF-switches
NOTES
BF1108; BF1108R
1999
Philips Semiconductors
Product specification
Silicon RF-switches
NOTES
BF1108; BF1108R
1999
Philips Semiconductors
Product specification
Silicon RF-switches
NOTES
BF1108; BF1108R
1999
Philips Semiconductors worldwide company
Argentina: South America Australia: Figtree Drive, HOMEBUSH, 2140, Tel. 9704 8141, Fax. 9704 8139 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1248, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 0733, Fax. +375 0773 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 9211, Fax. +359 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 0087 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Sydhavnsgade 1780 COPENHAGEN Tel. 3333, Fax. 3905 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 6158 0920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 4099 6161, Fax. 4099 6427 Germany: D-20097 HAMBURG, Tel. 2353 Fax. 2353 6300 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Philips Development Corporation, Semiconductors Division, Gedung Philips, Buncit Raya Kav.99-100, JAKARTA 12510, Tel. 0040 ext. 2501, Fax. 0080 Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Casati, 20052 MONZA (MI), Tel. 6838, 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. 3740 5130, Fax. 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381, +9-5 0087 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Pakistan: Singapore Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 319762, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 58088 Newville 2114, Tel. 5401, Fax. 5398 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 5985 2000, Fax. 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2741 Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2886, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. 81260 Umraniye, ISTANBUL, Tel. 1500, Fax. 1813 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 0087 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 5344, Fax.+381 5777
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
125004/02/pp12
Date release: 1999
Document order number:
9397 06073

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