Current Gain Plastic Medium Power Silicon Transistor designe

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Current Gain Plastic Medium Power Silicon Transistor designe

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*Pulse Test: Pulse Width Duty Cycle 2.0%.
Current Gain
Plastic Medium Power Silicon Transistor
designed Watt audio amplifiers drivers utilizing complementary quasi complementary circuits.
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Semiconductort
April, 2001 Rev.
Semiconductor Components Industries, LLC, 2001
Thermal Resistance, Junction Case
Operating Storage Junction Temperature Range
Total Device Dissipation 25_C
Base Current
Collector Current
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Current-Gain Bandwidth Product mAdc, Vdc, MHz)
Base-Emitter Voltage* Adc, Vdc)
Collector-Emitter Saturation Voltage* Adc, Adc)
Current Gain 0.15
Emitter Cutoff Current (VBE Vdc,
Collector Cutoff Current (VCB Vdc,
Collector-Emitter Sustaining Voltage* Adc,
(Min) 0.15
Characteristic
Rating
Characteristic
Symbol
Symbol
Tstg
VCBO
VCEO
VEBO
+150
Value V(BR)CEO Symbol VCE(sat) VBE(on) hFE1 hFE2 ICBO IEBO Watts _C/W Unit Unit
Semiconductor Preferred Device
AMPERES POWER TRANSISTORS SILICON VOLTS WATTS
Publication Order Number: BD237/D
BD238
BD237
CASE 77-09 TO-225AA TYPE
mAdc
mAdc
Unit
BD238
COLLECTOR CURRENT (AMP) 150°C
Safe Operating Area Curves indicate limits below which device will enter secondary breakdown. Collector load lines specific circuits must fall within applicable Safe Area avoid causing catastrophic failure. insure operation below maximum power-temperature derating must observed both steady state pulse power conditions.
BD236 BD237 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Active Region Safe Operating Area
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.25
25°C
BASE CURRENT (mA)
Figure Collector Saturation Region
CURRENT GAIN (NORMALIZED)
1000 150°C 25°C 55°C
VOLTAGE (VOLTS) VCE(sat) IC/IB 1000 2000 COLLECTOR CURRENT (mA) VBE(sat) IC/IB 25°C
1000 2000 COLLECTOR CURRENT (mA)
Figure Current Gain
Figure "On" Voltages
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BD238
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.05 0.01 SINGLE PULSE JC(t) r(t) 4.16°C/W 3.5°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) 0.02 0.03 0.05 TIME PULSE WIDTH (ms) P(pk)
0.07 0.05 0.03 0.02 0.01 0.01
DUTY CYCLE, t1/t2 1000
Figure Thermal Response
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BD238
PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 0.050 0.095 0.015 0.025 0.575 0.655 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 -MILLIMETERS 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 1.27 2.41 0.39 0.63 14.61 16.63 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02
0.25 (0.010)
0.25 (0.010)
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BD237/D

Current Gain Plastic Medium Power Silicon Transistor designe

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