Trench Gate Design Single IGBTMODAmperes/1200 Volts TYP) TYP.)

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Trench Gate Design Single IGBTMODAmperes/1200 Volts TYP) TYP.)

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CM600HU-24F
Trench Gate Design Single IGBTMODAmperes/1200 Volts
TYP) TYP.)
TYP)
MEASURING POINT
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistor single configuration with reverse-connected super-fast recovery freewheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Battery Powered Supplies
Outline Drawing Circuit Diagram Dimensions Inches 4.33 3.15 Millimeters 110.0 80.0 Dimensions Inches 1.14 0.37 Millimeters 29.0
1.34 +0.04/-0.02 34.0 +1.0/-0.5 3.66±0.01 2.44±0.01 0.22 0.57 0.53 0.96 93.0±0.25 62.0±0.25 14.5 13.5 24.5
1.02 +0.04/-0.02 26.0 +1.0/-0.5 0.85 0.16 0.26 Dia. 21.5 Dia.
Ordering Information: Example: Select complete module number desire from table i.e. CM600HU-24F 1200V (VCES), Ampere Single IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD600 Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Mounting Torque, Terminal Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM600HU-24F 1200 1200* 1200* 1900 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VCES, 60mA, 600A, 15V, 25°C 600A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage** 600V, 600A, 600A, Min. Typ. 6600 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD600 Amperes/1200 Volts
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 600A, VGE1 VGE2 15V, Inductive Load Switching Operation 600A 10V, Test Conditions Min. Typ. 43.2 Max. Units
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions IGBT, Reference Point Outline Drawing Thermal Resistance, Junction Case FWDi, Reference Point Outline Drawing Thermal Resistance, Junction Case IGBT, Reference Point Under Chip Contact Thermal Resistance Module, Thermal Grease Applied 0.015 °C/W
Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. 0.063
Units °C/W °C/W °C/W
0.075
0.03
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD600 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
1000
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
25°C 125°C
25°C
1200A
600A 240A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1000 1200
COLLECTOR-CURRENT, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
td(off) td(on)
Cies
SWITCHING TIME, (ns)
Coes Cres
600V ±15V 125°C Inductive Load
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT FWDi)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-3
10-2
10-1
600A
400V 600V
Unit Base Rth(j-c) 0.063°C/W (IGBT) Rth(j-c) 0.075°C/W (FWDi) Single Pulse 25°C
600V ±15V 25°C Inductive Load
10-1
10-1
10-2
10-2
EMITTER CURRENT, (AMPERES)
2000 4000 6000 8000 10000
GATE CHARGE, (nC)
10-3 10-5
TIME,
10-4
10-3 10-3

Trench Gate Design Single IGBTMODAmperes/1200 Volts TYP) TYP.)

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