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Rating Collector Emitter Voltage Collector Base Voltage Emitter Base V
Top Searches for this datasheetBC635, BC637, BC639 High Current Transistors Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Electrostatic Discharge Symbol VCEO VCBO VEBO Tstg +150 mW/°C Watt mW/°C http://onsemi.com BC635 BC637 BC639 Unit BASE EMITTER COLLECTOR HBM>16000, MM>2000 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Device BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1 °C/W Unit °C/W TO-92 (TO-226AA) CASE STYLE ORDERING INFORMATION Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 2000 Units/Tape Reel 2000 Units/Ammo Pack 5000 Units/Box 5000 Units/Box 2000 Units/Tape Reel 2000 Units/Ammo Pack Semiconductor Components Industries, LLC, 2000 February, 2000 Rev. Publication Order Number: BC635/D BC635, BC637, BC639 ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Characteristic Symbol Unit CHARACTERISTICS Collector Emitter Breakdown Voltage(1) mAdc, V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO nAdc µAdc Collector Base Breakdown Voltage µAdc, Emitter Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, 125°C) CHARACTERISTICS(1) Current Gain mAdc, Vdc) mAdc, Vdc) BC635 BC637 BC639 VCE(sat) VBE(on) Collector Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Pulse Test: Pulse Width Duty Cycle 2.0%. http://onsemi.com BC635, BC637, BC639 1000 COLLECTOR CURRENT (mA) 25°C 25°C BC635 BC637 BC639 25°C 25°C hFE, CURRENT GAIN VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR CURRENT (mA) 1000 Figure Active Region Safe Operating Area CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure Current Gain VOLTAGE (VOLTS) VBE(sat) IC/IB VBE(on) VCE(sat) IC/IB COLLECTOR CURRENT (mA) 1000 COLLECTOR CURRENT (mA) 1000 Figure Current-Gain Bandwidth Product Figure "Saturation" "On" Voltages TEMPERATURE COEFFICIENTS (mV/°C) -0.2 -1.0 VOLTS +100°C -1.6 -2.2 COLLECTOR CURRENT (mA) 1000 Figure Temperature Coefficients http://onsemi.com BC635, BC637, BC639 PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 029-04 ISSUE SEATING PLANE STYLE EMITTER COLLECTOR BASE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR PACKAGE BEYOND DIMENSION UNCONTROLLED. DIMENSION APPLIES BETWEEN DIMENSION APPLY BETWEEN MINIMUM. LEAD DIMENSION UNCONTROLLED BEYOND DIMENSION MINIMUM. INCHES 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43 SECTION Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. 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