BC635/637/639 Switching Amplifier Applications Complement BC

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BC635/637/639 Switching Amplifier Applications Complement BC

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BC635/637/639
BC635/637/639
Switching Amplifier Applications
Complement BC636/638/640
TO-92
Emitter Collector Base
Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCER Parameter Collector-Emitter Voltage RBE=1K BC635 BC637 BC639 Collector-Emitter Voltage BC635 BC637 BC639 VCEO Collector-Emitter Voltage BC635 BC637 BC639 VEBO TSTG Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value Units
VCES
PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage BC635 BC736 BC639 Collector Cut-off Current Emitter Cut-off Current Current Gain BC635 BC637/BC639 Test Condition IC=10mA, IB=0 Min. VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz Typ. Max. Units
ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. February 2000
BC635/637/639
Typical Characteristics
1000
IC[mA], COLLECTOR CURRENT
hFE, CURRENT GAIN
1000
[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure Static Characteristic
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
BE(sat)
IC[mA], COLLECTOR CURRENT
CE(sat)
0.01 1000
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
f=1MHz
Cob[pF], CAPACITANCE
CB[V], COLLECTOR-BASE VOLTAGE
Figure Collector Output Capacitance
©2000 Fairchild Semiconductor International
Rev. February 2000
BC635/637/639
Package Demensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions Millimeters
©2000 Fairchild Semiconductor International Rev. February 2000
TRADEMARKS
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Quiet SeriesFAST® FASTrGTODISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
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FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR INTERNATIONAL. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2000 Fairchild Semiconductor International
Rev.

BC635/637/639 Switching Amplifier Applications Complement BC

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