General Purpose Transistor Arrays CA3045 CA3046 each consist five

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General Purpose Transistor Arrays CA3045 CA3046 each consist five

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CA3045, CA3046
General Purpose Transistor Arrays
CA3045 CA3046 each consist five general purpose silicon transistors common monolithic substrate. transistors internally connected form differentially connected pair. transistors CA3045 CA3046 well suited wide variety applications power systems through range. They used discrete transistors conventional circuits. However, addition, they provide very significant inherent integrated circuit advantages close electrical thermal matching.
Features
Matched Transistors Match ±5mV Match. (Max) Noise Figure 3.2dB (Typ) 1kHz General Purpose Monolithic Transistors Operation From 120MHz Wide Operating Current Range Full Military Temperature Range
Ordering Information
PART NUMBER (BRAND) CA3045F CA3046 CA3046M (3046) CA3046M96 (3046) TEMP. RANGE (oC) PACKAGE CERDIP PDIP SOIC SOIC Tape Reel PKG. F14.3 E14.3 M14.15 M14.15
Applications
Three Isolated Transistors Differentially Connected Transistor Pair Power Applications Frequencies from Through Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated-Circuit Transistor Array" Suggested Applications
Pinout
CA3045, (CERDIP) CA3046 (PDIP, SOIC) VIEW
DIFFERENTIAL PAIR
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
CA3045, CA3046
Absolute Maximum Ratings
Collector-to-Emitter Voltage (VCEO) Collector-to-Base Voltage (VCBO) Collector-to-Substrate Voltage (VCIO, Note Emitter-to-Base Voltage (VEBO) Collector Current (IC) 50mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) PDIP Package CERDIP Package. SOIC Package Maximum Power Dissipation (Any Transistor) 300mW Maximum Junction Temperature (Hermetic Packages). .175oC Maximum Junction Temperature (Plastic Package) .150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3045 CA3046 isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER CHARACTERISTICS
25oC, characteristics apply each transistor CA3045 CA3046 specified SYMBOL TEST CONDITIONS UNITS
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current (Figure Collector Cutoff Current (Figure Forward Current Transfer Ratio (Static Beta) (Note (Figure
V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO
10µA, 1mA, 10µA, 10µA, 10V, 10V, 10mA 10µA
0.002 Fig. 0.715 0.800 0.45 0.45
Input Offset Current Matched Pair |IIO1 IIO2| (Note (Figure Base-to-Emitter Voltage (Note (Figure
10mA
Magnitude Input Offet Voltage Differential Pair |VBE1 VBE2| (Note (Figures Magnitude Input Offset Voltage Isolated Transistors |VBE3 VBE4|, |VBE4 VBE5|, |VBE5 VBE3| (Note (Figures Temperature Coefficient Base-to-Emitter Voltage (Figure Collector-to-Emitter Saturation Voltage Temperature Coefficient: Magnitude Input Offset Voltage (Figure DYNAMIC CHARACTERISTICS Frequency Noise Figure (Figure Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure Short Circuit Input Impedance (Figure VCES
-1.9
mV/oC
1mA, 10mA
0.23
µV/oC
1kHz, 100µA, Source Resistance
3.25
1kHz, 1kHz,
CA3045, CA3046
Electrical Specifications
PARAMETER Open Circuit Output Impedance (Figure Open Circuit Reverse Voltage Transfer Ratio (Figure Admittance Characteristics Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance NOTE: Actual forcing current emitter this test. 1kHz, 1kHz, 1kHz, 1kHz, j1.5 j0.04 0.001 j0.03 Fig. 0.58 25oC, characteristics apply each transistor CA3045 CA3046 specified (Continued) SYMBOL TEST CONDITIONS 1kHz, 1kHz, 15.6 10-4 UNITS
Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 10-1 10-2 10-3 TEMPERATURE (oC) TEMPERATURE (oC)
10-1 10-2 10-3 10-4
FIGURE TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT TEMPERATURE EACH TRANSISTOR
STATIC FORWARD CURRENT TRANSFER RATIO (hFE) 0.01 25oC BETA RATIO
FIGURE TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT TEMPERATURE EACH TRANSISTOR
INPUT OFFSET CURRENT (µA) 25oC
0.01 0.01
EMITTER CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO BETA RATIO EMITTER CURRENT
FIGURE TYPICAL INPUT OFFSET CURRENT MATCHED TRANSISTOR PAIR Q1Q2 COLLECTOR CURRENT
CA3045, CA3046 Typical Performance Curves
BASE-TO-EMITTER VOLTAGE 25oC INPUT OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE
(Continued)
0.5mA
INPUT OFFSET VOLTAGE
0.01
EMITTER CURRENT (mA)
TEMPERATURE (oC)
FIGURE TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS INPUT OFFSET VOLTAGE DIFFERENTIAL PAIR PAIRED ISOLATED TRANSISTORS EMITTER CURRENT
4.00 INPUT OFFSET VOLTAGE (mV) 10mA 3.00
FIGURE TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC TEMPERATURE EACH TRANSISTOR
25oC
0.1kHz 2.00 0.75 0.50 0.25 TEMPERATURE (oC) 0.1mA NOISE FIGURE (dB) 1kHz 10kHz
0.01
COLLECTOR CURRENT (mA)
FIGURE7. DIFFERENTIAL PAIR PAIRED ISOLATED TRANSISTORS TEMPERATURE
1000 25oC
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
10000 25oC 0.1kHz 1kHz 10kHz
NOISE FIGURE (dB)
NOISE FIGURE (dB)
0.1kHz 1kHz 10kHz
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
FIGURE TYPICAL NOISE FIGURE COLLECTOR CURRENT
CA3045, CA3046 Typical Performance Curves
1kHz 25oC
(Continued)
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT FREQUENCY (MHz) 25oC,
NORMALIZED PARAMETERS
3.5k 1.88 10-4 15.6µS
0.01 COLLECTOR CURRENT (mA)
FIGURE TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO COLLECTOR CURRENT
FREQUENCY (MHz)
FIGURE TYPICAL FORWARD TRANSFER ADMITTANCE FREQUENCY
OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mS)
INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
FREQUENCY (MHz)
FIGURE TYPICAL INPUT ADMITTANCE FREQUENCY
REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT 25oC, SMALL FREQUENCIES LESS THAN 500MHz
FIGURE TYPICAL OUTPUT ADMITTANCE FREQUENCY
25oC
GAIN BANDWIDTH PRODUCT (MHz)
1000
-0.5 -1.0
-1.5 -2.0 FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE TYPICAL REVERSE TRANSFER ADMITTANCE FREQUENCY
FIGURE TYPICAL GAIN BANDWIDTH PRODUCT COLLECTOR CURRENT
CA3045, CA3046
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General Purpose Transistor Arrays CA3045 CA3046 each consist five

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