Diode Array CA3039 consists ultra-fast, capacitance diodes common

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Diode Array CA3039 consists ultra-fast, capacitance diodes common

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CA3039
Diode Array
CA3039 consists ultra-fast, capacitance diodes common monolithic substrate. Integrated circuit construction assures excellent static dynamic matching diodes, making array extremely useful wide variety applications communication switching systems. Five diodes independently accessible, sixth shares common terminal with substrate. applications such balanced modulators ring modulators where capacitive balance important, substrate should returned potential which significantly more negative (with respect active diodes) than peak signal applied.
Features
Matched Diodes Common Substrate Excellent Reverse Recovery Time (Typ) Match (Max) Capacitance 0.65pF (Typ)
Applications
Ultra-Fast Capacitance Matched Diodes Applications Communications Switching Systems Balanced Modulators Demodulators Ring Modulators High Speed Diode Gates Analog Switches
Ordering Information
PART NUMBER CA3039 CA3039M CA3039M96 TEMP. RANGE (oC) PACKAGE Metal SOIC SOIC Tape Reel PKG. T12.B M14.15 M14.15
Pinouts
CA3039 (SOIC) VIEW CA3039 (METAL CAN) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
343.3
7-18
CA3039
Absolute Maximum Ratings
Inverse Voltage (PIV) for: 0.5V Diode-to-Substrate Voltage (VDI) .20V, (Terminal Terminal Forward Current (IF) 25mA Recurrent Forward Current (IF) 100mA Forward Surge Current (IF(SURGE)). 100mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) Metal Package SOIC Package Maximum Power Dissipation (Any Diode) 100mW Maximum Junction Temperature (Metal Package) 175oC Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER
25oC; Characteristics apply each diode unit, Unless Otherwise Specified SYMBOL TEST CONDITIONS 50µA 10mA 0.65 0.73 0.76 0.81 0.69 0.78 0.80 0.90 UNITS
Forward Voltage Drop (Figure
Reverse Breakdown Voltage Reverse Breakdown Voltage Between Diode Unit Substrate Reverse (Leakage) Current (Figure Reverse (Leakage) Current Between Diode Unit Substrate (Figure Magnitude Diode Offset Voltage (Note (Figure Temperature Coefficient |VF1 VF2| (Figure
V(BR)R V(BR)R
-10µA -10µA -10V
0.016 0.022
µV/oC
Temperature Coefficient Forward Drop (Figure
-1.9
mV/oC
Forward Voltage Drop Anode-toSubstrate Diode (DS) Reverse Recovery Time Diode Resistance (Figure Diode Capacitance (Figure Diode-to-Substrate Capacitance (Figure NOTE:
10mA, -10mA 1kHz, -2V,
0.65
0.65
Magnitude Diode Offset Voltage difference Forward Voltage Drops diode units.
7-19
CA3039 Typical Performance Curves
25oC FORWARD VOLTAGE DIODE OFFSET VOLTAGE (mV) REVERSE CURRENT (nA) DIODE OFFSET 0.01
FORWARD VOLTAGE DROP (VF)
0.01
FORWARD CURRENT (mA)
0.001
TEMPERATURE (oC)
FIGURE FORWARD VOLTAGE DROP (ANY DIODE) DIODE OFFSET VOLTAGE FORWARD CURRENT
FIGURE REVERSE (LEAKAGE) CURRENT TEMPERATURE
DIODE OFFSET VOLTAGE (mV)
-10V
10mA 0.1mA
REVERSE CURRENT (nA)
0.01
0.001
TEMPERATURE (oC)
TEMPERATURE (oC)
FIGURE REVERSE (LEAKAGE) CURRENT BETWEEN SUBSTRATE TEMPERATURE
FIGURE DIODE OFFSET VOLTAGE (ANY DIODE) TEMPERATURE
1000
FORWARD VOLTAGE
25oC 1kHz
DIODE RESISTANCE
0.01
TEMPERATURE (oC)
FORWARD CURRENT (mA)
FIGURE FORWARD VOLTAGE DROP (ANY DIODE) TEMPERATURE
FIGURE DIODE RESISTANCE (ANY DIODE) FORWARD CURRENT
7-20
CA3039 Typical Performance Curves
DIODE CAPACITANCE (pF) 25oC
(Continued)
DIODE SUBSTRATE CAPACITANCE (pF)
25oC
REVERSE VOLTAGE ACROSS DIODE
REVERSE VOLTAGE BETWEEN TERMINALS SUBSTRATE (TERMINAL
FIGURE DIODE CAPACITANCE REVERSE VOLTAGE
FIGURE DIODE-TO-SUBSTRATE CAPACITANCE REVERSE VOLTAGE
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
7-21

Diode Array CA3039 consists ultra-fast, capacitance diodes common

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