Silicon Switching Diode Array high-speed switching applications Electr
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BAS28W
Silicon Switching Diode Array high-speed switching applications Electrical insulated diodes
VPS05605
EHA07289
Type BAS28W
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current
Marking
Configuration
Package SOT343
Symbol Ptot Tstg
Value
Unit
Surge forward current, Total power dissipation, Junction temperature Storage temperature
Thermal Resistance
Junction soldering point1)
RthJS
1For calculation RthJA please refer Application Note Thermal Resistance
Jun-29-2001
BAS28W
Electrical Characteristics 25°C, unless otherwise specified. Parameter Symbol Values min. characteristics Breakdown voltage I(BR) Forward voltage Reverse current Reverse current
characteristics Diode capacitance Reverse recovery time measured
Unit max.
typ.
V(BR)
1000 1250
Test circuit reverse recovery time
D.U.T.
Oscillograph
EHN00019
Pulse generator: 100ns, 0.05, 0.6ns,
Oscillograph: 0.35ns,
Jun-29-2001
BAS28W
Forward current
Forward current 25°C
EHB00035
Permissible Pulse Load RthJS f(tp
Permissible Pulse Load IFmax IFDC f(tp)
IFmax IFDC
0.05 0.02 0.01 0.005
0.005 0.01 0.02 0.05
RthJS
Jun-29-2001
BAS28W
Forward voltage (TA)
Reverse current (TA)
EHB00037
EHB0003
max.
typ.
Jun-29-2001
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