Silicon N_Channel MOSFET Tetrode Short-channel transistor with high qu
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BF998.
Silicon N_Channel MOSFET Tetrode Short-channel transistor with high quality factor low-noise, gain-controlled input stage
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Configuration Marking
BF998 BF998R BF998W
SOT143 SOT143R SOT343
3=G2 3=G1 3=G1
4=G1 4=G2 4=G2
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate gate 2-source current Total power dissipation BF998, BF998R BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel soldering point BF998, BF998R BF998W
1For calculation thJA please refer Application Note Thermal Resistance
Symbol ±IG1/2SM Ptot
Value
Unit
Tstg Symbol
Rthchs
Value
Unit
Feb-13-2004
BF998.
Electrical Characteristics Parameter Characteristics Drain-source breakdown voltage VG1S VG2S Gate source breakdown voltage ±IG2S VG2S Gate2 source breakdown voltage ±IG2S VG2S Gate source leakage current VG2S Gate source leakage current VG2S Drain current VG1S VG2S Gate source pinch-off voltage VG2S Gate source pinch-off voltage VG1S -VG2S(p) -VG1S(p) IDSS ±IG2SS ±IG1SS (BR)G2SS (BR)G1SS V(BR)DS Symbol min. Values typ. max. Unit
Feb-13-2004
BF998.
Electrical Characteristics Parameter Characteristics Forward transconductance
VG2S Cg1ss
Symbol min.
Values typ. max.
Unit
Gate1 input capacitance
VG2S
Gate input capacitance
VG2S
Cg2ss
Feedback capacitance
VG2S
Cdg1
Output capacitance
VG2S
Cdss
Power gain
VG2S VG2S
Noise figure
VG2S VG2S
Gain control range
Feb-13-2004
BF998.
Total power dissipation Ptot (TS) BF998, BF998R Total power dissipation Ptot (TS) BF998W
Output characteristics VG2S
VG1S Parameter
-0.4V -0.2V 0.2V 0.4V
Gate forward transconductance
(ID) VG2S Parameter
Feb-13-2004
BF998.
Gate forward transconductance
(VG1S)
Drain current G1S)
VG2S Parameter
-0.75 -0.5 -0.25 0.25
0.75
-0.75 -0.5 -0.25
0.25
VG1S
VG1S
Power gain (VG2S)
Noise figure (VG2S)
VG2S
VG2S
Feb-13-2004
BF998.
Power gain (VG2S)
Power gain (VG2S)
VG2S
VG2S
Gate input capacitance Cg1ss (VG1S)
Output capacitance (VDS)
Cg1ss
Cdss
-2.6
-2.2
-1.8
-1.4
-0.6
VG1S
Feb-13-2004
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