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BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junct


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BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
FEATURES Interchangeability drain source connections High IDSS range Frequency MHz. APPLICATIONS amplifiers Mixers General purpose switching. DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors plastic TO-92 variant package. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling. PINNING
BF246A; BF246B; BF246C; BF247A; BF247B; BF247C
SYMBOL
DESCRIPTION
BF246A; BF246B; BF246C drain gate source
BF247A; BF247B; BF247C drain source gate
handbook, halfpage
MAM257
Fig.1
Simplified outline (TO-92 variant) symbol.
QUICK REFERENCE DATA SYMBOL VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C Ptot total power dissipation forward transfer admittance reverse transfer capacitance operating junction temperature Tamb CONDITIONS -0.6 MIN. TYP. MAX. -14.5 UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg gate current total power dissipation storage temperature operating junction temperature PARAMETER drain-source voltage
BF246A; BF246B; BF246C; BF247A; BF247B; BF247C
CONDITIONS Tamb
MIN.
MAX. +150
UNIT
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction ambient CONDITIONS free VALUE UNIT
STATIC CHARACTERISTICS Tamb unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF246A; BF247A BF246B; BF247B BF246C; BF247C IDSS drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C IGSS Note Measured under pulse conditions: 0.02. DYNAMIC CHARACTERISTICS Tamb unless otherwise specified. SYMBOL fgfs PARAMETER input capacitance reverse transfer capacitance output capacitance forward transfer admittance cut-off frequency CONDITIONS MHz; MHz; MHz; kHz; value kHz; MIN. TYP. MAX. UNIT gate leakage current note CONDITIONS -1.5 -3.0 -5.5 -4.0 -7.0 -12.0 MIN. -0.6 TYP. -14.5 MAX. UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
PACKAGE OUTLINE
BF246A; BF246B; BF246C; BF247A; BF247B; BF247C
handbook, full pagewidth
0.40
2.54
12.7 0.48 0.40
0.66 0.56
MBC015
Dimensions Terminal dimensions this zone uncontrolled.
Fig.2 TO-92 variant.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF246A; BF246B; BF246C; BF247A; BF247B; BF247C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

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