Silicon N-Channel MOSFET Tetrode Preliminary data noise, high gain con

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Silicon N-Channel MOSFET Tetrode Preliminary data noise, high gain con

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2030W
Silicon N-Channel MOSFET Tetrode Preliminary data noise, high gain controlled input stages 1GHz Operating voltage
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Q62702-F1774
Configuration
Package SOT-343
2030W
Maximum Ratings Parameter Drain-source voltage
Symbol
Value .+150
Unit
G1/2SM +VG1SE
Continuos drain current Gate 1/gate peak source current Gate (external biasing) Total power dissipation, Storage temperature Channel temperature
Ptot
Thermal Resistance Channel soldering point
Rthchs
Semiconductor Group Semiconductor Group
Jun-05-1998 1998-11-01
2030W
Electrical Characteristics 25°C, unless otherwise specified. Symbol Values Parameter min. characteristics Drain-source breakdown voltage typ. max.
Unit
V(BR)DS
+V(BR)G1SS +V(BR)G2SS G1SS G2SS
Gate source breakdown voltage
Gate source breakdown voltage Gate source current
VG1S
Gate source leakage current
VG2S
Drain current
VG2S(p) VG1S(p)
VG2S
Drain-source current
Gate 2-source pinch-off voltage
Gate 1-source pinch-off voltage
characteristics Forward transconductance
Cg1ss
Gate input capacitance
Output capacitance
Cdss
Noise figure
Semiconductor Group Semiconductor Group
Jun-05-1998 1998-11-01

Silicon N-Channel MOSFET Tetrode Preliminary data noise, high gain con

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