| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
Preliminary Data used current mirror Good thermal coupling matching Hi
Top Searches for this datasheetSilicon Double Transistors Preliminary Data used current mirror Good thermal coupling matching High current gain emitter-saturation voltage Type Marking Ordering Code (tape reel) Q62702-C2158 Q62702-C2159 Q62702-C2160 Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor Collector-base voltage (open emitter) (transistor Emitter-base voltage Collector current Collector peak current Base peak current (transistor Total power dissipation, °C2) Junction temperature Storage temperature range Thermal Resistance Junction ambient2) Junction soldering point Symbol VCE0 VCB0 VEBS Ptot Tstg Values Unit detailed information chapter Package Outlines. Package mounted epoxy mm/6 Semiconductor Group 5.91 Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current current gain1) V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 VCEsat VBEsat Values typ. max. Unit Collector-emitter saturation voltage1) Base-emitter saturation voltage1) Base-emitter voltage Pulse test conditions: Semiconductor Group Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Base-emitter forward voltage Matching transistor transistor VCE1 Thermal coupling transistor transistor T21) Maximum current thermal stability characteristics transistor Transition frequency Collector-base capacitance Input capacitance Noise figure kHz, Input impedance Open-circuit reverse voltage transfer ratio Short-circuit forward current transfer ratio Open-circuit output admittance Cibo VBES Values typ. max. Unit h11e h12e h21e h22e Without emitter resistor. Device mounted alumina 16.5 Semiconductor Group Test circuit current matching Note: Voltage drop contacts: Characteristic determination VCE1 specified range with parameter under condition Note: with emitter resistors Semiconductor Group Total power dissipation Ptot (TA*; Package mounted epoxy Permissible pulse load Ptot max/Ptot (tp) Semiconductor Group Other recent searchesSTA810M - STA810M STA810M Datasheet S4C1R - S4C1R S4C1R Datasheet QII53016-10 - QII53016-10 QII53016-10 Datasheet PD16835 - PD16835 PD16835 Datasheet NTZD3154N - NTZD3154N NTZD3154N Datasheet M27C405 - M27C405 M27C405 Datasheet DS1330W - DS1330W DS1330W Datasheet BCR135 - BCR135 BCR135 Datasheet
Privacy Policy | Disclaimer |