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Top Searches for this datasheetCAUTION WARNING information this publication been carefully checked believed accurate; however, responsibility assumed inaccuracies. Sanken reserves right make changes without further notice products herein interest improvements performance, reliability, manufacturability products. Before placing order, Sanken advises customers obtain latest version relevant information verify that information being relied upon current. Application operation examples described this catalog quoted sole purpose reference products herein Sanken assume responsibility infringement industrial property rights, intellectual property rights other rights Sanken third party which result from use. When using products herein, applicability suitability such products intended purpose object shall reviewed users' responsibility. Although Sanken undertakes enhance quality reliability products, occurrence failure defect semiconductor products certain rate inevitable. Users Sanken products requested take, their risk, preventative measures including safety design equipment systems against possible injury, death, fires damages society device failure malfunction. Sanken products listed this catalog designed intended components general purpose electronic equipment apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing order, user's written consent specifications requested. When considering Sanken products applications where higher reliability required (transportation equipment control systems, traffic signal control systems equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative discuss obtain written confirmation your specifications. Sanken products without written consent Sanken applications where extremely high reliability required (aerospace equipment, nuclear power control systems, life support systems, etc.) strictly prohibited. Anti radioactive design considered products listed herein. This publication shall reproduced whole part without prior written approval from Sanken. Ordering Specify number standard minimum packaged units when placing order. Standard minimum packaged unit Package Type Series STA300 STA400 STA500 Cardboard Stick Reel 1200 Contents Product index Part Number Product index function (Sink Driver) Product index function (Source Driver). Product index function (Motor Driver) Product index applications. Storage, characteristic inspection, handling precautions Avalanche energy capability MOSFET array Transistor array with built-in avalanche diode Switching time measurement External dimensions packages packages packages packages (surface mount) Product index Part Number Part Number SDA01 SDA05 SDC01 SDC03 SDC04 SDC06 SDC07 SDH02 SDH03 SDK02 SDK04 SLA4010 SLA4030 SLA4031 SLA4041 SLA4060 SLA4061 SLA4070 SLA4071 SLA4310 SLA4340 SLA4390 SLA4391 SLA5001 SLA5002 SLA5003 SLA5004 SLA5005 SLA5006 SLA5007 SLA5008 SLA5009 SLA5010 SLA5011 SLA5012 SLA5013 SLA5015 SLA5017 SLA5018 SLA5021 SLA5022 SLA5023 SLA5024 SLA5029 SLA5031 SLA5037 SLA5040 SLA5041 SLA5042 SLA5044 SLA5046 SLA5047 SLA5049 SLA5052 SLA5054 SLA5055 SLA5057 SLA5058 SLA5059 SLA5060 SLA5061 SLA5064 SLA5065 SLA5068 SLA5070 SLA5072 SLA5073 SLA5074 SLA5075 SLA5077 SLA5079 Classification Number chips VCEO VDSS (min) Source driver -1.5 2000 3-phase motor driver 2000 Sink driver 1000 Sink driver 60±10 2000 Sink driver 100±15 2000 Sink driver 3-phase motor driver 2000 Sink driver 2000 H-bridge driver +100/-60 ±1.5 2000 Sink driver Sink driver Sink driver 60±10 2000 Sink driver 2000 Sink driver 2000 Sink driver 1000 Sink driver 2000 Sink driver 2000 Source driver -100 1000 Source driver -100 2000 H-bridge driver H-bridge driver 2000 H-bridge driver ±100 2000 H-bridge driver ±100 1000 Sink driver Sink driver Sink driver Source driver Source driver -100 Source driver -100 H-bridge driver +5/-4 H-bridge driver ±100 +4/-3 3-phase motor driver +5/-4 3-phase motor driver ±100 +4/-3 Sink driver Source driver H-bridge driver ±100 Source driver 3-phase motor driver +5/-4 H-bridge driver +5/-4 Sink driver 3-phase motor driver 2000 3-phase motor driver ±100 2000 Source driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver ±7/±5/±7 Sink driver ±5/±7 Sink driver ±7/±7 Sink driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 5-phase motor driver 5-phase motor driver Sink driver ±7/±7 3-phase motor driver 5-phase motor driver 5-phase motor driver 3-phase motor driver Sink driver 3-phase motor driver (ON) Package 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin with 15-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 12-pin with 12-pin with Page 0.24 0.22/0.55 0.6/1.3 0.22/0.55 0.6/1.3 0.22 0.3/0.7 0.55 0.22/0.55 0.22/0.55 0.19 0.22 0.55 0.55 0.45 0.08 0.175 0.185 0.25 0.35 0.085 0.115 0.105/0.44/0.2 0.44/0.2 0.175/0.35 0.55 0.22 0.14 0.14 0.105/0.2 0.14 Part Number SLA5080 SLA5081 SLA5085 SLA5086 SLA5088 SLA6012 SLA6020 SLA6022 SLA6023 SLA6024 SLA6026 SLA8001 SMA4020 SMA4021 SMA4030 SMA4032 SMA4033 SMA5101 SMA5102 SMA5103 SMA5104 SMA5105 SMA5106 SMA5112 SMA5114 SMA5117 SMA5118 SMA5125 SMA5127 SMA6010 SMA6014 SMA6511 SMA6512 STA301A STA302A STA302A STA303A STA303A STA304A STA305A STA308A STA312A STA322A STA371A STA401A STA402A STA403A STA404A STA406A STA408A STA412A STA413A STA421A STA431A STA434A STA435A STA457C STA458C STA460C STA471A STA472A STA473A STA475A STA481A STA485A STA501A STA504A STA505A STA506A Classification Number chips VCEO VDSS (min) 3-phase motor driver Sink driver ±7/±7 Sink driver Source driver Sink driver ±5/±7 3-phase motor driver 2000 3-phase motor driver ±100 2000 3-phase motor driver 2000 3-phase motor driver 2000 3-phase motor driver 2000 3-phase motor driver 2000 H-bridge Source driver 2000 Source driver 2000 Sink driver 2000 Sink driver 2000 Sink driver 2000 Sink driver Sink driver H-bridge driver +5/-4 3-phase motor driver +5/-4 Sink driver Sink driver 3-phase motor driver Sink driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 2000 3-phase motor driver 1500/2000 Stepper motor driverr with 100±15/-60 1.5/-3 2000 Dual Supply Voltage Switch Stepper motor driverr with 60±10/-60 1.5/-3 2000 Dual Supply Voltage Switch Sink driver 60±10 1000 Source driver 1000 3-phase motor driver 1000 Sink driver 1000 3-phase motor driver 1000 3-phase motor driver 3-phase motor driver -550 Source driver -120 2000 Sink driver Source driver Sink driver 60±10 2000 Sink driver 60±10 1000 Source driver 1000 Sink driver 1000 Sink driver 1000 Sink driver 60±10 2000 Source driver -120 2000 Sink driver Sink driver 35±5 Source driver H-bridge driver H-bridge driver 1000 Sink driver 65±15 1000 H-bridge driver 2000 H-bridge driver Sink driver 60±10 Sink driver 60±10 2000 Source driver 2000 Sink driver 2000 Sink driver 100±15 2000 Sink driver 60±10 2000 Sink driver 100±15 2000 Sink driver Sink driver Sink driver Sink driver (ON) 0.14 0.105/0.2 0.22 0.22 0.44/0.2 0.22/0.55 0.22/0.55 0.55 0.25 0.25 0.14 0.55 Package 12-pin with 15-pin with 12-pin with 12-pin with 15-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin Page 0.45 Product index function Part Number Number chips STA460C STA371A STA301A SDC06 STA413A STA481A SDC03 STA471A STA401A SLA4010 STA406A STA435A STA485A SDC04 STA475A VCEO 60±10 60±10 60±10 35±5 60±10 60±10 60±10 60±10 60±10 60±10 65±15 100±15 100±15 100±15 Sink driver Package 10-pin 8-pin 8-pin 16-pin 10-pin 10-pin 16-pin 10-pin 10-pin 12-pin with 10-pin 10-pin 10-pin 16-pin 10-pin Page qWith built-in avalanche diode between collector base (min) (ON) Equivalent circuit 2000 1000 2000 2000 2000 1000 2000 2000 1000 2000 2000 2000 qWith built-in flywheel diode Part Number Number chips VCEO VDSS SDK02 SMA5114 SLA5031 SDH02 SMA4033 SMA4032 SLA5040 SMA5102 SMA5106 SLA5002 SMA5105 SLA4031 SLA4061 SLA4041 SLA5003 (min) (ON) Equivalent circuit 0.24 0.25 0.55 Package 16-pin 12-pin 12-pin with 16-pin 12-pin 12-pin 12-pin with 12-pin 12-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with Page 2000 2000 2000 2000 2000 1000 qGeneral purpose Part Number Number chips VCEO VDSS STA312A STA303A SDC01 STA412A STA504A STA501A STA473A STA506A SDK04 SMA4030 STA505A STA403A SLA4030 SMA5101 SLA5001 SLA5037 SLA4060 SLA5047 SLA5052 STA404A SLA5041 SLA5044 SLA5029 SLA5011 SLA5085 SLA5021 SLA5042 SLA5055 ±5/±7 SLA5088 ±5/±7 SLA5058 SLA5081 ±7/±7 SLA5046 SLA5049 SLA5054 ±7/±5/±7 SLA5070 ±7/±7 SLA5057 ±7/±7 (min) (ON) Equivalent circuit 1000 0.45 2000 2000 1000 2000 0.08 2000 0.085 0.115 1000 0.175 0.25 0.45 0.22 0.22 0.19 0.185 0.44/0.2 0.44/0.2 0.105/0.2 0.35 0.105/0.44/0.2 0.105/0.2 0.175/0.35 Package 8-pin 8-pin 16-pin 10-pin 10-pin 10-pin 10-pin 10-pin 16-pin 12-pin 10-pin 10-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 10-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin with 15-pin with 12-pin with 12-pin with 15-pin with 15-pin with 15-pin with Page qEquivalent circuit (Sink driver) Product index function Source driver qWith built-in flywheel diode Part Number Number chips VCEO VDSS SMA4021 SLA4071 -100 SLA5006 -100 (min) (ON) Equivalent circuit Package 2000 12-pin 2000 12-pin with 12-pin with Page qGeneral purpose Part Number Number chips VCEO VDSS STA322A STA302A STA308A -120 STA402A SDA01 -1.5 STA472A STA421A SMA4020 SLA5024 SLA5004 SLA4070 -100 SLA5005 -100 STA408A -120 SLA5015 SLA5012 SLA5086 (min) (ON) Equivalent circuit 1000 2000 1000 2000 2000 2000 0.55 1000 2000 0.55 0.22 Package 8-pin 8-pin 8-pin 10-pin 16-pin 10-pin 10-pin 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 10-Pin 12-pin with 12-pin with 12-pin with Page qEquivalent circuit (Source driver) Product index function Motor driver qH-bridge driver Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit STA458C STA431A STA434A 1000 STA457C 2000 SLA4310 SLA4340 2000 SLA5007 +5/-4 0.22/0.55 SLA5018 +5/-4 0.22/0.55 SMA5103 +5/-4 0.22/0.55 SLA8001 SDH03 ±100/-60 ±1.5 2000 SLA5008 ±100 +4/-3 0.6/1.3 SLA4390 ±100 2000 SLA4391 ±100 1000 SLA5013 ±100 0.3/0.7 Package 10-pin 10-pin 10Pin 10-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin with 16-pin 12-pin with 12-pin with 12-pin with 12-pin with Page q3-phase motor driver Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit SDC07 2000 SLA5080 0.14 STA303A 1000 STA304A STA302A 1000 SDA05 2000 SLA5079 0.14 STA305A -550 SLA5059 0.55 SLA5060 0.22 SLA5061 0.14 SLA5064 0.14 SMA6014 1500/2000 SMA6010 2000 SLA6012 2000 SMA5127 0.55 SLA5009 +5/-4 0.22/0.55 SLA5017 +5/-4 0.22/0.55 SMA5104 +5/-4 0.22/0.55 SLA5022 2000 0.22 SLA6023 2000 SLA6024 2000 SLA6026 2000 SMA5125 0.14 SLA6022 2000 SLA5010 ±100 +4/-3 0.6/1.3 SLA6020 ±100 2000 SLA5023 ±100 2000 0.55 SLA5072 SMA5112 SMA5117 0.25 SLA5075 SMA5118 Package 16-pin 12-pin with 8-pin 8-pin 8-pin 16-pin 12-pin with 8-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin 12-pin 15-pin with 12-pin Page qStepper motor driver with dual supply voltage switch Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit Package SMA6511 100±15/-60 1.5/-3 2000 12-pin SMA6512 60±10/-60 1.5/-3 2000 12-pin Page q5-phase motor driver Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit SLA5074 SLA5065 SLA5073 SLA5068 Package 15-pin with 15-pin with 15-pin with 15-pin with Page qEquivalent circuit (Motor driver) Product index applications Product type Application Typical circuit example Transistor Darlington qSolenoid qRelay STA301A STA371A STA401A STA406A STA435A STA471A STA475A STA481A STA485A STA4010 SDC04 SDC03 SLA4031 SLA4041 SLA4060 SMA4032 SMA4033 SDH02 SLA5002 SLA5003 SLA5031 SLA5040 SMA5102 SMA5105 SMA5106 SMA5114 SDK02 SLA4071 SMA4021 SLA5006 Single STA460C STA413A SDC06 MOSFET STA302A STA308A STA402A STA408A STA472A SLA4070 SMA4020 SDA01 STA322A STA421A SLA5004 SLA5005 SLA5024 Product type Application Typical circuit example Transistor Darlington motor Forward-reverse control STA434A STA457C SLA4340 STA4390 SDH03 Single STA431A STA458C SLA4310 SLA8001 MOSFET control SLA4391 SLA5007 SLA5008 SLA5013 SLA5018 SMA5103 q3-phase brushless motor STA302A+STA303A SMA6010 SLA6020 SDA05+SDC07 100V direct drive 200V direct drive SLA5072 SLA5075 SMA5112 SMA5117 SMA5118 200V direct drive STA304A+STA305A control SLA6012 SLA6022 SLA6023 SLA6024 SLA6026 SMA6014 SLA5022 SLA5023 SLA5009 SLA5010 SLA5017 SLA5059 SLA5060 SLA5061 SLA5064 SLA5079+SLA5080 SMA5104 SMA5125 SMA5127 Product index applications Product type Application Typical circuit example Transistor Darlington qStepper motor Constant voltage drive STA401A STA406A STA435A STA471A STA475A STA481A STA485A SLA4010 SDC04 SDC03 SMA6511 SMA6512 Single STA460C STA413A SDC06 MOSFET Dual supply voltage drive Bipolar drive STA473A STA472A STA408A STA404A STA403A STA402A SMA4030 SMA4020 SLA4070 SLA4060 SLA4030 SDA01 STA421A STA412A SDC01 STA506A STA505A STA504A STA501A SMA5101 SLA5024 SLA5005 SLA5004 SLA5001 Product type Application q5-phase motor Typical circuit example SLA5011 SLA5029 SLA5065+SLA5068 SLA5073+SLA5074 SLA5085 N-CH SLA5012 SLA5015 SLA5086 P-CH Application q"S" shape correction switch Typical circuit example Product type 100V SLA5021 SLA5037 SLA5042 150V SLA5047 SLA5052 SLA5054 SLA5055 SLA5058 SLA5070 SLA5077 SLA5081 SLA5088 200V SLA5041 SLA5046 SLA5057 250V SLA5044 SLA5049 Storage, characteristic inspection, handling precautions Inappropriate storage, characteristic inspection, handling impair reliability device. ensure high reliability, observe following precautions: Soldering temperature soldering necessary, take care keep application heat brief possible, within following limits: 260±5°C 350°C (soldering iron) Storage precautions recommended store device room temperature (between 35°C) relative humidity 75%. Avoid storing device place where temperature humidity high changes greatly. Store device clean place that exposed direct sunlight, free from corrosive harmful gases. device stored long time, check solderability lead condition before using device. Heatsink large contact area between device heatsink effective heat radiation required. ensure large contact area, minimize mounting holes select heatsink with sufficiently smooth surface that free from burring metal debris. Precautions characteristic inspections When carrying characteristic inspections receiving products other occasions, take care avoid applying surge voltage from measuring equipment check terminals measuring equipment short circuit wiring errors. Measure device within range rated values. Handling precautions protect power MOSFET arrays from static damage When handling device, physical grounding necessary. Wear wrist strap with resistor close body wrist strap prevent electric shock. conductive tablemat floor device handling workbench ensure grounding. When using curve tracer other measuring equipment, ground equipment well. When soldering, ground soldering iron tank prevent leakage voltage from damaging device. Store device shipping container conductive container aluminum foil protect device from static electricity. Silicone Grease When attaching heatsink, apply small amount silicone evenly back device both sides insulator reduce thermal resistance between device heatsink. Recommended silicone grease qG746 qYG6260 qSC102 SHINETSU SILICONE CO., LTD. TOSHIBA SILICONE CO., LTD. CORNING TORAY SILICONE CO., LTD. Please select silicone grease carefully since some grease penetrate product, which will result extremely short product life. Screw tightening torque screws tightened with sufficient torque, this increase thermal resistance reduce radiation effect. Tightening screws with great torque damage screw thread, deform heatsink, twist device frame until damaged. Therefore, tighten screws with torque between 0.588 0.784 cm). Avalanche energy capability MOSFET array What avalanche energy capability When MOSFET used high-speed switching, inductive load wiring inductance cause counter electromotive voltage cutoff that device cannot withstand. Avalanche energy capability non-clamped ability withstand damage expressed energy. long energy applied device cutoff within guaranteed avalanche energy capability, device will damaged even drain-source voltage exceeds capability. example, drain-source voltage that within guaranteed capability when electrically stationary exceed limit startup cutoff. Usually, snubber circuit similar surge absorbing circuit used keep drain-source voltage within guaranteed capability. Sanken MOSFETs, however, require this kind protective circuit because avalanche energy capability guaranteed. Sanken MOSFETs enable number parts reduced, saving board area. Consult engineering department Sanken when planning MOSFETs avalanche mode. Sanken MOSFETs feature guaranteed avalanche energy capability. Temperature derating value specifications guaranteed when channel temperature 25°C. Since value drops channel temperature rises, derating depending temperature necessary. Fig. shows derating curve single avalanche energy capability. This derating curve channel temperature (Tch (start)) immediately before avalanche occurs product, with value (maximum rating) 25°C 100%. example, product temperature 50°C, value derated value 25°C. Fig. (start) EAS(normalized) calculation method current inductive load moment when MOSFET off, expressed follows: VDSS ILP2 VDSS *VDD Supply voltage value known actual circuit, also calculated from actual voltage current waveforms follows: Surge power Surge time following calculation used determine where voltage current shown Fig. applied MOSFET circuit Integrate overlapping section calculate When waveform triangular, will follows: 10(A) 550(V) 10(µs) 27.5(mJ) (start) (°C) Continuous avalanche energy capability This section explains derating method continuous avalanche. Considering continuous avalanche repetition single avalanche, safe operating area (SOA) determined using derating curve shown Fig. Calculate energy (start) avalanche worst condition determine using calculated data derating curve shown Fig. temperature rise avalanche should cause channel temperature exceed maximum rating. following example determining judgment calculation when MOSFET enters transient avalanche state power-on then changes stationary state Supposing that waveform shown Fig. until MOSFET changes stationary state, calculate start loss switching (turn-on/off) loss. simplify calculation, average loss last waveforms used approximation. (Fig. First, calculate channel temperature time where temperature condition severest. value within maximum rating, there problem temperature concerned. Fig. 550V (VDSS) 550V (VDSS) Tch() rch-c rch-c rch-c rch-c rch-c rch-c rch-c rch-c (t6).3 Ambient temperature *rch-c Transient thermal resistance pulse width Then calculate channel temperature immediately before avalanche. Tch() rch-c rch-c rch-c rch-c rch-c (T') rch-c rch-c rch-c (t6).4 This value becomes (start). avalanche energy (EAS within value derated from guaranteed value temperature, there problem avalanche energy concerned. Avalanche energy capability measuring method Fig. Measuring circuit V(BR)DSS ILp2 V(BR)DSS V(BR)DSS Output waveform Fig. Transient Stationary T(n) Avalanche this section Fig. T(n) Transistor array with built-in avalanche diode Darlington transistor chip with built-in avalanche diode planar type monolithic Darlington transistor chip having equivalent circuit shown figure right. Surge Voltage absorbed avalanche diode provided between collector base. This eliminated need extra components absorbing surge caused counter electromotive force produced inductive load switch circuits. These Darlington transistor arrays ideal relay drive, solenoid drive, printer wire drive applications. SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03, Switching time measurement Transistor array Fig. Measuring circuit +VBB2 -VBB1 Input-output waveform Base current Collector current 0.1IC 0.9IC tstg D.U.T -VCC array Fig. Measuring circuit P.W.=10 Duty cycle1% Input-output waveform td(on) td(off) toff Fig. Measuring circuit +VBB1 D.U.T -VBB2 Input-output waveform Base current Collector 0.9IC current 0.1IC Fig. Measuring circuit P.W.=10 Duty cycle1% Input-output waveform td(on) td(off) toff tstg External dimensions (12-pin) 31.5max 3.2±0.15 (unit: (8-pin) 20.4 31.0±0.2 24.4±0.2 Ellipse3.2±0.15 4.8±0.2 11.3±0.2 4.7±0.5 16.0±0.2 13.0±0.2 9.0±0.2 1.7±0.1 9.5min 1.0±0.25 Pin1 +0.2 +0.2 0.5±0.15 (2.54) P2.54=17.78 0.55-0.1 2.2±0.7 1.2±0.15 1.45±0.15 P2.54±0.7 27.94±1.0 1.2±0.2 0.85-0.1 0.5±0.15 C1.5±0.5 Part 4.0±0.2 Weight Approx. 6.0g Weight Approx. 2.0g (15-pin) 31.3±0.2 (10-pin) 25.25±0.2 3.2±0.15 31.0±0.2 24.4±0.2 16.4±0.2 4.8±0.2 1.7±0.1 11.3±0.2 2.3±0.2 9.0±0.2 13.0±0.2 16.0±0.2 9.9±0.2 2.45±0.2 4.7±0.5 (3.0) 6.7±0.5 9.7-0.5 +1.0 1.0±0.25 0.5±0.15 2.54 22.86±0.25 (2.54) R-End 0.5±0.15 1.2±0.2 0.65-0.1 P2.03±0.7=28.42±1.0 +0.2 1.15-0.1 +0.2 0.55-0.1 4.0±0.7 +0.2 C1.5±0.5 4.0±0.2 Part Weight Approx. 6.0g Weight Approx. 2.6g 0.89±0.15 31.0±0.2 4.0±0.2 2.5±0.2 0.75-0.05 +0.15 2.54±0.25 10.2±0.2 6.8max 8.0±0.5 20.0max 19.56±0.2 (10.4) 6.3±0.2 +0.15 0.3-0.05 27.94 0.55-0.1 +0.2 1.2±0.1 1.0±0.3 3.0±0.2 9.8±0.3 3.6±0.2 1.4±0.2 2.54 0.85-0.1 +0.2 0.25 1.46±0.15 0~0.1 4.0max Part Part Weight Approx. 4.0g Weight Approx. 1.05g SLA4010 Absolute maximum ratings Symbol VCBO VCEO VEBO Tstg Ratings 60±10 60±10 (PW10ms, Du50%) (Ta=25°C) (Tc=25°C) +150 Darlington With built-in avalanche diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification unit (Ta=25°C) Unit Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=4V) (VCE=4V) 1.0mA 0.8mA 0.6mA 5000 5000 1000 0.5mA 0.4mA 1000 0.3mA 0.05 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=-4V) (sat) (sat) 25°C 125°C Ta=-30°C IC=4A IC=2A IC=3A 75°C 25°C -30°C IC=1A (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) init tsin Without Heatsink Single Pulse Without Heatsink Ta=25°C 1000 0.05 (mS) (°C) SLA4030 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Darlington General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit (Ta=25°C) Unit Vrms °C/W Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=2A IC=2A, IB=10mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=2V) (VCE=2V) 0.8mA 0.6mA 0.5mA 0.4mA 5000 5000 1000 0.3mA 0.05 1000 0.02 0.02 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=500) (VCE=2V) 25°C (sat) (sat) 25°C 75°C IC=4A IC=2A IC=1A 75°C 25°C -30°C (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) init tsin Without Heatsink Single Pulse 0.05 Without Heatsink 1000 (mS) (°C) 0.03 Ta=25°C SLA4031 Absolute maximum ratings Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings (PW1ms, Du50%) (PW0.5ms, Du25%) (PW10ms, Single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Darlington With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO (sat) (sat) tstg Specification 2000 5000 15000 Specification Unit (Ta=25°C) Unit Vrms °C/W Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA 40V, IC=2A, IB1=-IB2=10mA (Ta=25°C) qDiode flyback voltage absorption Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) 0.8m 0.6mA hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 (VCE=2V) (VCE=2V) 0.5mA 5000 0.4mA 0.3mA 1000 1000 0.02 0.02 0.05 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=500) (VCE=2V) (sat) (sat) Ta=1 25°C 75°C 25°C IC=4A IC=2A IC=1A 75°C 25°C -30°C (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) Without Heatsink init tsin Single Pulse 0.05 Without Heatsink 1000 0.03 Ta=25°C (mS) (°C) SLA4041 Absolute maximum ratings Symbol VCBO VCEO VEBO IFSM Tstg Ratings (PW10ms, Du50%) (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) +150 Darlington With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC Specification 1000 6000 15000 Specification Unit (Ta=25°C) Unit Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1.5A IC=1.5A, IB=3mA IFEC=2.0A (Ta=25°C) qDiode flyback voltage absorption Symbol Unit Conditions IR=10µA IF=1A VR=200V IF=±100mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 5000 hFE-IC Temperature Characteristics (Typical) 5000 (VCE=4V) (VCE=4V) IB=2 1000 1000 0.03 0.05 0.03 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=100) (VCE=4V) Ta=125 75°C 25°C -30°C (sat) (sat) IC=3A IC=1A IC=1.5A (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) init tsin Without Heatsink 0.05 Single Pulse Without Heatsink 1000 0.03 Ta=25°C (mS) (°C) SLA4060 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Darlington General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) tstg 2000 5000 15000 Specification Unit (Ta=25°C) Unit Vrms °C/W Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A IC=3A, IB=3mA 30V, IC=3A, IB1=-IB2=3mA sEquivalent circuit diagram 2.5k Characteristic curves IC-VCE Characteristics (Typical) 0.8mA 0.7mA IB=2mA 0.5m hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 0.6mA (VCE=2V) (VCE=2V) 5000 0.4m 1000 1000 0.05 0.02 0.02 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=2V) (sat) (sat) 25°C 75°C Ta=-30°C IC=5A IC=3A 75°C 25°C -30°C 125°C IC=1A (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) init tsin Without Heatsink Single Pulse 0.05 Without Heatsink 1000 Ta=25°C 0.03 (mS) (°C) SLA4061 Absolute maximum ratings Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings (PW1ms, Du50%) (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Darlington With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) tstg Specification 2000 5000 15000 Specification Unit (Ta=25°C) Unit Vrms °C/W Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A IC=3A, IB=3mA 30V, IC=3A, IB1=-IB2=3mA (Ta=25°C) qDiode flyback voltage absorption Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA sEquivalent circuit diagram 2.5k Characteristic curves IC-VCE Characteristics (Typical) 0.8mA 0.7mA 0.6mA 0.5mA hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 (VCE=2V) (VCE=2V) 0.4mA 5000 1000 1000 0.02 0.02 0.05 0.05 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=2V) (sat) (sat) 25°C 75°C 125°C IC=3A IC=1A (mA) 75°C 25°C -30°C Ta=-30°C IC=5A j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) init tsin Without Heatsink Single Pulse 0.05 Without Heatsink 1000 0.03 Ta=25°C (mS) (°C) SLA4070 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg Ratings -100 -100 (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Darlington General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) -100 1000 5000 -1.0 -1.6 15000 -1.5 -2.0 Specification Unit (Ta=25°C) Unit Vrms °C/W Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-2V, IC=-3A IC=-3A, IB=-6mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) -4mA -2mA hFE-IC Characteristics (Typical) 10000 5000 hFE-IC Temperature Characteristics (Typical) 10000 5000 (VCE=-4V) (VCE=-4V) -1.2mA -0.8mA 1000 1000 -0.6mA -0.4mA -0.03 -0.03 -0.1 -0.5 -0.1 -0.5 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=-4V) (sat) (sat) -30°C 75°C 125°C 25°C -0.3 -0.5 -0.3 -100 -200 Ta=1 25°C 75°C 25°C -30°C (mA) j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) (°C/W) -0.5 Without Heatsink -0.1 Single Pulse -0.05 Without Heatsink 1000 -0.03 Ta=25°C -100 (mS) (°C) SLA4071 Absolute maximum ratings Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings -100 -100 (PW1ms, Du50%) -0.5 (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°) 1000 (Between lead pin, +150 Darlington With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) Specification -100 2000 5000 15000 -1.0 -1.5 -1.6 -2.0 Unit Unit Vrms °C/W Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-2V, IC=-3A IC=-3A, IB=-6mA (Ta=25°C) qDiode flyback voltage absorption Symbol Specification Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 10000 5000 hFE-IC Temperature Characteristics (Typical) 10000 5000 (VCE=-4V) (VCE=-4V) -1.2 -0.8mA 1000 1000 -0.6mA -0.4mA -0.03 -0.03 -0.1 -0.5 -0.1 -0.5 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=-4V) (sat) (sat) IC=-5A IC=-3A 75°C 125°C -0.3 -0.5 -0.3 -0.5 -100 -200 (mA) Ta=1 j-a-PW Characteristics PT-Ta Characteristics With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) 25°C 75°C 25°C -30°C Ta=-30°C 25°C IC=1A init tsin -0.5 Without Heatsink -0.1 Single Pulse -0.05 Without Heatsink 1000 -0.03 Ta=25°C -100 (mS) (°C) SLA4310 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%) H-bridge External dimensions (12-pin) (Ta=25°C) Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Unit Vrms °C/W sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) 60mA 50mA 40mA 30mA IC-VBE Temperature Characteristics (Typical) (VCE=4V) 20mA -30mA -20mA 10mA -10mA -5mA -30°C hFE-IC Characteristics (Typical) (VCE=4V) (VCE=-4V) (VCE=-4V) 0.01 0.05 -0.01 -0.05 -0.1 -0.5 -0.5 -1.0 -1.5 hFE-IC Temperature Characteristics (Typical) (VCE=4V) (VCE=-4V) Ta=125°C 75°C 25°C Ta=125°C 75°C 25°C -30°C -30°C 0.01 0.05 -0.01 -0.05 -0.5 SLA4310 Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) Specification Unit Conditions VCB=60V VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A -0.6 Specification Unit Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-1A IC=-2A, IB=-0.2A (Ta=25°C) Characteristic curves VCE(sat)-IB Characteristics (Typical) j-a-PW Characteristics -1.5 (sat) (sat) -1.0 IC=3 -0.5 0.005 0.01 0.05 -0.005 -0.01 -0.05 -0.1 -0.5 1000 (mS) VCE(sat) VBE(sat)-IC Characteristics (Typical) PT-Ta Characteristics IB=10) With Silicone Grease Natural Cooling Heatsink: Aluminum IB=10) -1.0 (sat) (sat) VCE(sat) VBE(sat) (sat) -0.5 (sat) Without Heatsink (sat) (sat) 0.05 -0.05 -0.1 -0.5 (°C) Safe Operating Area (SOA) -0.5 Single Pulse Single Pulse Without Heatsink T=25°C -0.1 Without Heatsink Ta=25°C 0.05 -0.05 -100 SLA4340 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%) Darlington H-bridge External dimensions (12-pin) (Ta=25°C) Ratings (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Unit Vrms °C/W sEquivalent circuit diagram Characteristic curves IC-VCE Characteristics (Typical) IB=4.0mA 2.0mA IC-VBE Temperature Characteristics (Typical) -1.8 (VCE=4V) -1.5mA -1.2mA -1.0mA 1.2mA 0.8mA 0.4mA 75°C 25°C 0.5mA -0.8mA -30°C 25°C 0.6mA -0.9mA hFE-IC Characteristics (Typical) 10000 5000 (VCE=4V) 10000 (VCE=-4V) (VCE=-4V) 5000 75°C 25°C 0.03 -0.03 -0.1 -0.5 -30°C 1000 1000 Ta=125 hFE-IC Temperature Characteristics (Typical) 10000 5000 (VCE=4V) 10000 5000 (VCE=-4V) 1000 1000 75°C 25°C 0.03 -0.03 -0.1 -0.5 SLA4340 Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA 2000 -1.5 Specification Unit Conditions VCB=-60V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA (Ta=25°C) Characteristic curves VCE(sat)-IB Characteristics (Typical) j-a-PW Characteristics (sat) (sat) IC=4A IC=-4A IC=2A IC=1A IC=-2A IC=-1A -0.2 -0.5 -100 1000 (mA) (mA) (mS) VCE(sat)-IC Temperature Characteristics (Typical) 25°C PT-Ta Characteristics IB=1000) With Silicone Grease Natural Cooling Heatsink: Aluminum IB=1000) 75°C (sat) (sat) init 25°C 75°C tsin Ta=-30°C 125°C Without Heatsink -0.5 (°C) Safe Operating Area (SOA) -0.5 0.05 Without Heatsink 0.03 Ta=25°C Single Pulse -0.1 -0.05 Without Heatsink -0.03 Ta=25°C -100 Single Pulse SLA4390 Absolute maximum ratings Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%) Darlington H-bridge External dimensions (Ta=25°C) (12-pin) Ratings -100 -100 (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Unit Vrms °C/W sEquivalent circuit diagram 2.5k Characteristic curves IC-VCE Characteristics (Typical) 0.8mA IC-VBE Temperature Characteristics (Typical) IB=-4mA -2mA -1.2mA (VCE=4V) 0.7m -0.8mA 0.6m 0.5mA -0.6mA 0.4mA hFE-IC Characteristics (Typical) 20000 10000 5000 (VCE=4V) 20000 10000 Ta=1 75°C 25°C -30°C -0.4mA 25°C (VCE=-4V) (VCE=-4V) 5000 1000 1000 0.03 -0.03 25°C -30°C -0.1 -0.5 hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 25°C (VCE=4V) 20000 10000 5000 (VCE=-4V) 1000 75°C 1000 25°C 0.03 0.05 -0.03 -0.05 -0.1 -0.5 SLA4390 Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA -100 2000 -1.5 Specification Unit Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA (Ta=25°C) Characteristic curves VCE(sat)-IB Characteristics (Typical) j-a-PW Characteristics (sat) (sat) -500 IC=-5A IC=-3A IC=5A IC=3A IC=1A IC=-1A -0.2 -0.5 -100 1000 (mA) (mA) (mS) VCE(sat)-IC Temperature Characteristics (Typical) PT-Ta Characteristics IB=1000) With Silicone Grease Natural Cooling Heatsink: Aluminum IB=1000) Ta=125°C (sat) (sat) 75°C 25°C init tsin Ta=-30°C 75°C 25°C 125°C Without Heatsink -0.3 -0.5 (°C) Safe Operating Area (SOA) Single Pulse Ta=25°C -0.5 0.05 Without Heatsink 0.03 -0.1 Single Pulse -0.05 Without Heatsink -0.03 Ta=25°C -100 SLA4391 Absolute maximum ratings Symbol VCBO VCEO VEBO IFSM VISO Tstg Darlington H-bridge External dimensions (Ta=25°C) (12-pin) Ratings -100 -100 (PW1ms, Du50%) (PW1ms, Du50%) -0.5 (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150 Unit Vrms °C/W sEquivalent circuit diagram 2.5k Characteristic curves IC-VCE Characteristics (Typical) 0.8mA IC-VBE Temperature Characteristics (Typical) IB=-4mA -2mA -1.2mA -0.8mA (VCE=4V) 0.7m 0.5mA -0.6mA 0.4mA 25°C -30°C -0.4mA hFE-IC Characteristics (Typical) 20000 10000 5000 (VCE=4V) 20000 10000 (VCE=-4V) (VCE =-4V) 5000 1000 1000 -0.03 0.03 -0.1 -0.5 25°C -30°C 75°C hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 (VCE=4V) 20000 10000 5000 (VCE=-4V) 1000 75°C 25°C 1000 75°C 25°C 0.03 -0.03 -0.1 -0.5 SLA4391 Electrical characteristics Symbol ICBO IEBO VCEO VCE(sat) Specification 1000 Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA (Ta=25°C) (Ta=25°C) Specification -100 1000 -1.5 Unit Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA qDiode flyback voltage absorption Symbol Specification Unit Conditions IR=10µA IF=1A VR=100V Characteristic curves VCE(sat)-IB Characteristics (Typical) j-a-PW Characteristics (sat) (sat) -500 IC=-5A IC=-3A IC=5A IC=3A IC=1A IC=-1A -0.2 -0.5 -100 1000 (mA) (mA) (mS) VCE(sat)-IC Temperature Characteristics (Typical) PT-Ta Characteristics IB=1000) With Silicone Grease Natural Cooling Heatsink: Aluminum IB=1000) 75°C Ta=125 (sat) (sat) 25°C init tsin Ta=-30°C 75°C 25°C 125°C Without Heatsink -0.3 -0.5 (°C) Safe Operating Area (SOA) Single Pulse -0.5 0.05 Without Heatsink 0.03 Ta=25°C -0.1 Single Pulse -0.05 Without Heatsink -0.03 Ta=25°C -100 SLA5001 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings ±10(PW1ms) (Ta=25°C, with circuits operating, without heatsink) N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.27 0.30 Specification ±500 Unit (Ta=25°C) Unit °C/W °C/W Vrms Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) (VGS=10V) (ON) TC=-40°C 25°C 125°C VGS=4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=10V) ID=5A VGS=10V VGS=0V f=1MHz Ciss Capacitance (pF) (yfs) (ON) Coss TC=-40°C 25°C 125°C 0.05 Crss (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5002 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms) N-channel With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.27 0.30 Specification Unit (Ta=25°C) Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA VISO Tstg (PW0.5ms, Du25%) (PW10ms, Single Pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 qDiode flyback voltage absorption Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) (VDS=10V) RDS(ON)-ID Characteristics (Typical) (VGS=10V) (ON) TC=-40°C 25°C 125°C VGS=4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=10V) ID=5A VGS=10V VGS=0V f=1MHz Ciss Capacitance (pF) (yfs) Coss (ON) TC=-40°C 25°C 125°C Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5003 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings N-channel With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.67 Specification Unit (Ta=25°C) Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 100V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA VISO Tstg (PW1ms) 5(PW0.5ms, Du25%) 10(PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 qDiode flyback voltage absorption circuit) Symbol Unit Conditions IR=10µA IF=1A IF=5A VR=200V IF=±100mA VDD=20V, L=10mH, ID=3.5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) (VGS=10V) TC=-40°C (ON) VGS=5V 25°C 125°C Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=10V) ID=5A VGS=10V VGS=0V f=1MHz TC=-40°C 25°C Ciss (yfs) 125°C Capacitance (pF) (ON) Coss 0.05 Crss (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics LIMI With Silicone Grease Natural Cooling Circuits Operating VGS=0V 0.05 0.03 Without Heatsink (°C) SLA5004 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink) P-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.22 -4.5 -5.5 0.30 Specification -250 -4.0 Unit (Ta=25°C) Unit °C/W °C/W Vrms Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -30V,VGS=-10V, Fig. page ISD=-5A ISD= 100mA (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) --10 -10V ID-VGS Characteristics (Typical) TC=-40°C 25°C RDS(ON)-ID Characteristics (Typical) 0.25 (VDS=-10V) (VGS=-10V) 125°C 0.20 0.15 (ON) 0.10 0.05 VGS=-4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 2000 (VDS=-10V) ID=-5A VGS=-10V 1000 Capacitance (pF) (yfs) Coss (ON) TC=-40°C 25°C 125°C Crss -0.1 -0.5 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating -0.5 Without Heatsink -0.1 -0.5 -100 (°C) VGS=0V f=1MHz Ciss SLA5005 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) Ratings -100 (PW1ms) (Ta=25°C, with circuits operating, without heatsink) P-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.55 -4.5 -5.5 Specifications -100 -250 -4.0 Unit (Ta=25°C) Unit °C/W °C/W Vrms Condition ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -50V, VGS=-10V, Fig. page ISD=-5A, VGS=0V ISD= 100mA (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) -10V ID-VGS Characteristics (Typical) TC=-40°C 25°C RDS(ON)-ID Characteristics (Typical) (VDS=-10V) (VGS=-10V) 125°C (ON) VGS=-4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=-10V) ID=-5A VGS=-10V VGS=0V f=1MHz (yfs) (ON) Capacitance (pF) Ciss Coss TC=-40°C 25°C Crss 125°C -0.05 -0.1 -0.5 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) With Silicone Grease Natural Cooling Circuits Operating -0.5 Without Heatsink -0.1 -0.5 -100 (°C) SLA5006 Absolute maximum ratings Symbol VDSS VGSS Ratings -100 10(PW1ms) P-channel With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification -100 -250 -2.0 -4.0 0.55 -4.5 -5.5 Unit (Ta=25°C) Unit Condition ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -50V, VGS=-10V, Fig. page ISD=-5A, VGS=0V ISD= 100mA ID(pulse) 5(PW0.5ms, Du25%) IFSM 10(PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150 sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) -10V TC=- 40°C (ON) Re(yfs)-ID Characteristics (Typical) (VDS=-10V) (yfs) (ON) Capacitance (pF) TC=-40°C 25°C 125°C -0.05 -0.1 -0.5 IDR-VSD Characteristics (Typical) qDiode flyback voltage absorption Symbol Specification Unit Condition IR=10µA IF=1A VR=120V 100mA ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=-10V) (VGS=-10V) VGS=-4V RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 ID=-5A VGS=-10V VGS=0V f=1MHz Ciss Coss Crss (°C) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) With Silicone Grease Natural Cooling Circuits Operating -0.5 Without Heatsink -0.1 -0.5 -100 (°C) SLA5007 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms) N-channel P-channel H-bridge External dimensions (Ta=25°C) (12-pin) Ratigs channel (PW1ms) Unit °C/W °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=1mH, ID=2A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V (VDS=10V) TC=-40°C 25°C VGS=4V 125°C VGS=-4V RDS(ON)-ID Characteristics (Typical) N-ch 0.20 (VGS=10V) P-ch (VGS=-10V) P-ch TC=-40°C (VDS=-10V) 0.15 25°C 125°C (ON) 0.10 (ON) 0.05 RDS(ON)-TC Characteristics (Typical) N-ch ID=5A VGS=10V P-ch ID=-4A VGS=-10V (ON) (ON) (°C) (°C) SLA5007 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V,VGS=10V Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V,VGS=10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch (pulse) (TC=25°C) (yfs) (yfs) 25°C 0.08 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Ciss Capacitance (pF) Capacitance (pF) Coss Coss Crss -0.5 Crss -0.1 -0.5 -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5008 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms) N-channel P-channel H-bridge External dimensions (Ta=25°C) (12-pin) Ratings channel -100 (PW1ms) Unit °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) 3.57 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=1mH, ID=5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V (VDS=10V) TC=- 40°C 25°C VGS=5V VGS=-5V RDS(ON)-ID Characteristics (Typical) N-ch (VGS=10V) P-ch (VGS=-10V) P-ch (VDS=-10V) TC=- 40°C (ON) (ON) RDS(ON)-TC Characteristics (Typical) N-ch ID=4A VGS=10V P-ch ID=-3A VGS=-10V (ON) (ON) (°C) (°C) SLA5008 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.50 0.60 ±500 Specifications Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 50V, VGS=-10V, Fig. page ISD=4A ISD=±100mA -2.0 -4.0 -5.5 Specifications -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-25V, f=1.0MHz, VGS=0V ID=-3A, -50V, VGS=-10V, Fig. page ISD=-3A ISD= 100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch (pulse) (TC=25°C) (yfs) 25°C 0.05 -0.05 -0.1 -0.5 (yfs) Capacitance-VDS Characteristics (Typical) N-ch VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Ciss Capacitance (pF) Capacitance (pF) Coss -0.5 Crss Crss -0.1 -0.5 Coss -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5009 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms) N-channel P-channel 3-phase motor drive External dimensions (Ta=25°C) (12-pin) Ratings channel (PW1ms) Unit °C/W °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=1mH, ID=2A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V (VDS=10V) TC=-40°C 25°C VGS=V 125°C VGS=-4V RDS(ON)-ID Characteristics (Typical) N-ch 0.20 (VGS=10V) P-ch (VGS=-10V) P-ch TC=-40°C 25°C (VDS=-10V) 0.15 125°C (ON) 0.10 (ON) 0.05 RDS(ON)-TC Characteristics (Typical) N-ch ID=5A VGS=10V P-ch ID=-4A VGS=-10V (ON) (ON) (°C) (°C) SLA5009 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=-10V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (pulse) (VDS=10V) N-ch (TC=25°C) (yfs) (yfs) 25°C 0.08 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Capacitance (pF) Capacitance (pF) Ciss Coss Crss -0.5 Crss -0.1 -0.5 Coss -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5010 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms) N-channel P-channel 3-phase motor drive External dimensions (12-pin) (Ta=25°C) Ratings channel -100 (PW1ms) Unit °C/W °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) VISO Tstg (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating 1000 (Between lead pin, +150 VDD=20V, L=1mH, ID=5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V TC=-40°C (VDS=10V) 25°C 125°C VGS=5V VGS=-5V RDS(ON)-ID Characteristics (Typical) N-ch (VGS=10V) P-ch (VGS=-10V) P-ch TC=-40°C 25°C (VDS=-10V) 125°C (ON) (ON) RDS(ON)-TC Characteristics (Typical) N-ch ID=4A VGS=10V P-ch ID=-3A VGS=-10V (ON) (ON) (°C) (°C) SLA5010 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.50 0.60 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 50V, VGS=10V, Fig. page ISD=4A, VGS=0V ISD=±100mA -2.0 -4.0 -5.5 Specification -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-25V, f=1.0MHz, VGS=0V ID=-3A, -50V, VGS=-10V, Fig. page ISD=-3A ISD= 100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch (pulse) (TC=25°C) (yfs) (yfs) TC=-40°C 25°C 125°C 0.05 -0.05 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Ciss Capacitance (pF) Capacitance (pF) -0.5 Crss Crss -0.1 -0.5 Coss Coss -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5011 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings ±10(PW1ms) (Ta=25°C, with circuits operating, without heatsink) N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 Specification ±500 Unit (Ta=25°C) Unit °C/W °C/W Vrms Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=10V, Fig. page ISD=5A ISD=±100mA (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=1mH, ID=1.5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) 0.20 (VDS=10V) (VGS=10V) 0.15 (ON) TC=-40°C 25°C 125°C 0.10 0.05 VGS=4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=10V) ID=5A VGS=10V VGS=0V f=1MHz Ciss Capacitance (pF) (yfs) Coss (ON) 25°C Crss 0.08 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5012 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink) P-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.22 -4.5 -5.5 0.30 Specification -250 -4.0 Unit (Ta=25°C) Unit °C/W °C/W Vrms Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -30V, VGS=-10V, Fig. page ISD=-5A ISD= 100mA (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) -10V ID-VGS Characteristics (Typical) TC=-40°C 25°C RDS(ON)-ID Characteristics (Typical) 0.25 (VDS=-10V) (VGS=-10V) 125°C 0.20 (ON) 0.15 0.10 0.05 VGS=-4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 2000 (VDS=-10V) ID=-5A VGS=-10V VGS=0V f=1MHz 1000 Capacitance (pF) Ciss (yfs) Coss (ON) 25°C -0.1 Crss -0.5 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating -0.5 Without Heatsink -0.1 -0.5 -100 (°C) SLA5013 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms) N-channel P-channel H-bridge External dimensions (Ta=25°C) (12-pin) Ratings channel -100 (PW1ms) Unit °C/W °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch -10V ID-VGS Characteristics (Typical) P-ch N-ch (VDS=10V) TC=-40°C 25°C 125°C VGS=4V VGS=-4V RDS(ON)-ID Characteristics (Typical) N-ch (VGS=10V) P-ch (VGS=-10V) P-ch (VDS=-10V) (ON) (ON) RDS(ON)-TC Characteristics (Typical) N-ch ID=5A VGS=10V P-ch ID=-5A VGS=-10V (ON) (ON) (°C) (°C) SLA5013 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.27 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V, VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.55 -4.5 -5.5 Specification -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -50V, VGS=-10V, (Ta=25°C) Fig. page ISD=-5A, VGS=0V ISD= 100mA Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch (pulse) (TC=25°C) (yfs) (yfs) 25°C 25°C 0.05 -0.05 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch 1000 VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Capacitance (pF) Capacitance (pF) Ciss Coss Coss -0.5 Crss Crss -0.1 -0.5 -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating Without Heatsink (°C) SLA5015 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink) P-channel General purpose (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.38 -4.5 -5.5 0.55 Specification -250 -4.0 Unit Unit °C/W °C/W Vrms Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A ISD= 100mA (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits op1erating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 VISO Tstg sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) -10V 25°C ID-VGS Characteristics (Typical) 40°C RDS(ON)-ID Characteristics (Typical) (VDS=-10V) TC=- (VGS=-10V) (ON) VGS=-4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) Ciss (VDS=-10V) ID=-4A VGS=-10V VGS=0V f=1MHz (yfs) Capacitance (pF) Coss (ON) Crss -0.1 -0.5 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating -0.5 Without Heatsink -0.1 -0.5 -100 (°C) SLA5017 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* N-channel P-channel 3-phase motor drive External dimensions (Ta=25°C) (12-pin) Ratings channel channel (PW1ms) (PW1ms) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 Unit °C/W °C/W Vrms VISO Tstg VDD=20V, L=1mH, ID=2A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V (VDS=10V) 3.5V TC=-40°C 25°C VGS=3V 125°C VGS=-4V RDS(ON)-ID Characteristics (Typical) N-ch P-ch (VGS=-10V) P-ch TC=-40°C (VDS=-10V) 25°C 125°C (ON) (ON) VGS=10V RDS(ON)-TC Characteristics (Typical) N-ch (ID=2.5A) P-ch ID=-4A VGS=-10V VGS=10V (ON) (ON) (°C) (°C) SLA5017 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.25 0.22 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, (Ta=25°C) Fig. page ISD=-4A, VGS=0V ISD= 100mA Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (pulse) (VDS=10V) N-ch (TC=25°C) (yfs) (yfs) 25°C 0.05 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Ciss Capacitance (pF) Capacitance (pF) Coss Crss -0.5 Crss -0.1 -0.5 Coss -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating -10V VGS=0V VGS=0V Without Heatsink (°C) SLA5018 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* N-channel P-channel H-bridge External dimensions (Ta=25°C) (12-pin) Ratings channel channel (PW1ms) (PW1ms) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 Unit °C/W °C/W Vrms VISO Tstg VDD=20V, L=1mH, ID=2A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch N-ch -10V (VDS=10V) 3.5V TC=-40°C 25°C VGS=3V VGS=-4V 125°C RDS(ON)-ID Characteristics (Typical) N-ch P-ch (VGS=-10V) P-ch TC=-40°C (VDS=-10V) 25°C 125°C (ON) (ON) VGS=10V RDS(ON)-TC Characteristics (Typical) N-ch (ID=2.5A) P-ch ID=-2A VGS=-10V (ON) (ON) VGS=10V (°C) (°C) SLA5018 Electrical characteristics channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.25 0.22 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-2A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch (pulse) (TC=25°C) (yfs) (yfs) 25°C 0.05 -0.1 -0.5 Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch VGS=0V f=1MHz P-ch (pulse) (TC=25°C) Ciss Ciss Capacitance (pF) Capacitance (pF) Coss Crss -0.5 Crss -0.1 -0.5 Coss -100 IDR-VSD Characteristics (Typical) N-ch PT-Ta Characteristics P-ch With Silicone Grease Natural Cooling Circuits Operating -10V VGS=0V VGS=0V Without Heatsink (°C) SLA5021 Absolute maximum ratings Symbol VDSS VGSS Ratings (PW1ms) N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.18 0.19 0.19 0.25 Unit (Ta=25°C) Unit Conditins ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA ID(pulse) EAS* (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150 VDD=20V, L=10mH, ID=3A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) 4.0V ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) 0.25 (VDS=10V) 3.5V 0.20 VGS=4V 0.15 VGS=10V 3.0V (ON) TC=-40°C 25°C 0.10 VGS=2.5V 125°C 0.05 Re(yfs)-ID Characteristics (Typical) (VDS=10V) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 3000 (ID=2.5A) VGS=0V f=1MHz 1000 Ciss Capacitance (pF) (yfs) Coss (ON) VGS=4V VGS=10V TC=-40°C 25°C Crss 125°C 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating Without Heatsink VGS=0V (°C) SLA5022 Absolute maximum ratings Symbol VGSS Ratings (PW100ms) (PW1ms) -0.5 (Ta=25°C) (Tc=25°C) 3.57 1000 (Between lead pin, +150 Darlington N-channel MOSFET 3-phase motor drive (Ta=25°C) External dimensions (12-pin) Electrical characteristics (Sink channel MOSFET) Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.17 0.22 0.25 0.30 Unit (Ta=25°C) Unit °C/W °C/W Vrms Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=±100mA VISO Tstg sEquivalent circuit diagram OUT1 OUT2 OUT3 Characteristic curves (N-channel) VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical) (VDS=10V) 3.5V (ON) TC=-40°C 25°C VGS=10V VGS=3V 125°C ID-Re(yfs) Temperature Characteristics (Typical) VDS=10V TC-RDS(ON) Characteristics (Typical) (ID=2.5A) VDS-Cpacitance Characteristics (Typical) 1000 Ciss VGS=0V f=1MHz Capacitance (pF) (yfs) Coss (ON) VGS=10V 25°C Crss 0.05 (°C) VSD-IDR Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) VGS=0V SLA5022 Electrical characteristics (Source: transistor) Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC tstg 2000 5000 12000 -1.5 -2.0 Specification Unit (Ta=25°C) Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-4A IC=-4A, IB=-10mA IFEC=4A IF=±0.5A -25V, IC=-4A, IB1=-IB2=-10mA VCE=-12V, IE=1A VCB=-10V, f=1MHz Characteristic curves (PNP) IC-VCE Characteristics (Typical) IB=-10mA hFE-IC Characteristics (Typical) 20000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=-4V) (VCE=-4V) -3mA -2mA 10000 5000 5000 -1mA -0.5mA 1000 1000 -0.1 -0.5 -0.1 -0.5 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=-4V) (sat) (sat) IC=-8A Ta=-30°C 75°C 125°C IC=-2A -0.1 -0.5 -0.3 -0.5 -100 -200 25°C 25°C IC=-4A (mA) j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating ch-c -0.5 Single Pulse Without Heatsink Ta=25°C Without Heatsink 1000 -0.1 -100 (mS) (°C) SLA5023 Absolute maximum ratings Symbol VGSS Ratings (PW100ms) (PW1ms) -0.5 (Ta=25°C) (Tc=25°C) 3.57 1000 (Between lead pin, +150 Darlington N-channel MOSFET 3-phase motor drive (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Electrical characteristics (Sink: N-channel MOSFET) Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.47 0.55 0.60 0.78 Unit Unit °C/W °C/W Vrms Conditions ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=2A VGS=4V, ID=2A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V ISD=4A, VGS=0V IF=±100mA VISO Tstg sEquivalent circuit diagram OUT1 OUT2 OUT3 Characteristic curves (N-channel) VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) VDS=10V IDS-RDS(ON) Characteristics (Typical) 4.5V 40°C TC=- VGS=4V 3.5V VGS=3V 25°C (ON) VGS=10V ID-Re(yfs) Temperature Characteristics (Typical) VDS=10V TC-RDS(ON) Characteristics (Typical) (ID=2A) VDS-Cpacitance Characteristics (Typical) VGS=0V f=1MHz Ciss (yfs) (ON) Capacitance (pF) Coss 25°C Crss 0.05 (°C) VSD-IDR Characteristics (Typical) Safe Operating Area (SOA) (Tc=25°C) (pulse) ch-c-PW Characteristics ch-c 1000 500010000 (mS) SLA5023 Electrical characteristics (Source: transistor) Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC tstg -100 2000 5000 12000 -1.5 -2.2 Specification Unit (Ta=25°C) Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA IFEC=-1A IF=±100mA -30V IC=-3A IB1=-IB2=-6mA VCE=-12V, IE=1A VCB=-10V, f=1MHz Characteristic curves (PNP) IC-VCE Characteristics (Typical) IB=-4mA hFE-IC Characteristics (Typical) 20000 10000 hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 75°C (VCE=-4V) (VCE=-4V) -1.2mA 5000 -0.8mA -0.6mA -0.1 -0.5 1000 1000 -0.4mA -0.03 -0.05 -0.03 -0.05 -0.1 -0.5 VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) IB=1000) (VCE=-4V) (sat) (sat) IC=-5A IC=-3A Ta=-30°C 75°C 125°C 25°C IC=-1A -0.3 -0.5 -0.2 -0.5 -100 -500 75°C 25°C -30°C (mA) j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating ch-c -0.5 -0.1 Single Pulse -0.05 Without Heatsink Ta=25°C Without Heatsink 1000 -0.03 -100 (mS) (°C) SLA5024 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink) P-channel General purpose (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Unit °C/W °C/W Vrms Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification -250 -2.0 0.38 -4.4 -5.5 0.55 -4.0 Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A ISD= 100mA (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between finand lead pin, +150 VISO Tstg sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) -10V 25°C ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=-10V) TC=- 40°C (VGS=-10V) (ON) VGS=-4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) (VDS=-10V) ID=-4A VGS=-10V VGS=0V f=1MHz Ciss Capacitance (pF) (yfs) (ON) Coss Crss -0.1 -0.5 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating (TC=25°C) Without Heatsink -0.5 -0.1 -0.5 -100 (°C) SLA5029 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings (PW1ms) N-channel General purpose (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Unit Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff VISO Tstg (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 Specification ±100 0.33 0.45 Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 30V, VGS=10V, Fig. page ISD=4A ISD=±100mA VDD=20V, L=1mH, ID=1.2A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics SLA5031 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms) N-channel With built-in flywheel diode (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.17 0.22 0.25 0.30 Unit (Ta=25°C) Unit Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA VISO Tstg (PW0.5ms, Du25%) (PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 qDiode flyback voltage absorption Symbol Speciication Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA VDD=20V, L=1mH, ID=1.7A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) 3.5V (ON) TC=-40°C VGS=3V VGS=10V 25°C 125°C Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 1000 (VDS=10V) (ID=2.5A) VGS=0V f=1MHz Ciss (yfs) (ON) Capacitance (pF) Coss 25°C VGS=10V Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating VGS=0V Without Heatsink (°C) SLA5037 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings (PW1ms) N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specifications ±100 1630 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 50V, RL=10, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA VISO Tstg (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=3mH, ID=10A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) 2.8V ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) VGS=4V VGS=10V 2.6V TC=-40°C 25°C (ON) 2.4V 2.2V VGS=2V 125°C Re(yfs)-ID Characteristics (Typical) (VDS=10V) TC=-40°C RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 5000 (ID=5A) VGS=0V f=1MHz VGS=4V 25°C 125°C Ciss (yfs) VGS=10V Capacitance (pF) 1000 (ON) Coss Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating VGS=0V Without Heatsink (°C) SLA5040 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms) N-channel With built-in flywheel diode Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.50 0.60 Specification Unit External dimensions (12-pin) (Ta=25°C) (Ta=25°C) Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V, Fig. page ISD=4A, VGS=0V ISD=±100mA VISO Tstg (PW0.5ms, Du25%) (PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 qDiode flyback voltage absorption Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA VDD=20V, L=1mH, ID=5A, unclamped, Fig. page sEquivalent circuit diagram Characteristic curves SLA5041 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 100V, RL=20, VGS=10V, Fig. page ISD=10A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) 5.5V ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) (VGS=10V) 4.5V (ON) 125°C -40°C 25°C VGS=4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 3000 (VDS=10V) ID=5A VGS=10V VGS=0V f=1MHz 1000 Capacitance (pF) Ciss (yfs) (ON) Coss TC=25°C Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) With Silicone Grease Natural Cooling Circuits Operating VGS=0V 0.05 Without Heatsink 0.01 (°C) SLA5042 Absolute maximum ratings Symbol VDSS VGSS Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, 50V, RL=20, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA ID(pulse) (PW1ms, Du1%) EAS* (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150 VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50,see Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) 2.8V ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) VGS=4V VGS=10V 2.6V (ON) 2.4V TC=-40°C 25°C VGS=2.2V 125°C Re(yfs)-ID Characteristics (Typical) (VDS=10V) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 2000 (ID=2.5A) VGS=0V f=1MHz TC=-40°C 1000 25°C Capacitance (pF) Ciss (yfs) 125°C VGS=4V (ON) VGS=10V Coss 0.05 Crss (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating VGS= TC=25°C 1-Circuit Operation Without Heatsink (°C) SLA5044 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 100V, RL=20, VGS=10V, Fig. page ISD=10A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50,see Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) (VDS=10V) RDS(ON)-ID Characteristics (Typical) (VGS=10V) 4.5V (ON) TC=-40°C TC=25°C TC=125°C VGS=4V Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) ID=5A VGS=10V Capacitance-VDS Characteristics (Typical) 3000 (VDS=10V) VGS=0V f=1MHz 1000 Ciss Capacitance (pF) (yfs) (ON) Coss TC=-40°C TC=25°C TC=125°C Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating (TC=25°C) VGS=0V 0.05 Without Heatsink 0.01 (°C) SLA5046 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss td(on) td(off) Specification ±100 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 100V, RL=28.6, VGS=10V, Fig. page ISD=7A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VGS=10V) (VDS=10V) 5.5V (ON) TC=-40°C 25°C 125°C 4.5V VGS=4V Re(yfs)-ID Characteristics (Typical) (VDS=10V) RDS(ON)-TC Characteristics (Typical) ID=3.5A VGS=10V Capacitance-VDS Characteristics (Typical) 2000 1000 VGS=0V f=1MHZ Capacitance (pF) (yfs) Ciss (ON) Coss Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics (TC=25°C) (pulse) With Silicone Grease Natural Cooling Circuits Operating (ON) LIMITED VGS= Without Heatsink 0.05 (°C) SLA5047 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) (Ta=25°C) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 2000 Unit Unit Specification ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 70V, RL=14, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=4.7mH, ID=10A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) VGS=10V ID-VGS Characteristics (Typical) (VDS=10V) RDS(ON)-ID Characteristics (Typical) 2.8V VGS=4V 125°C 25°C 2.6V (ON) 2.4V TC=-40 Re(yfs)-ID Characteristics (Typical) (VDS=10V) RDS(ON)-TC Characteristics (Typical) (ID=5A) Capacitance-VDS Characteristics (Typical) 8000 5000 Ciss VGS=0V f=1MHz (yfs) 125°C 25°C Capacitance (pF) TC=-40°C 1000 Coss 0.05 (ON) Crss (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) (ON) LIMITED With Silicone Grease Natural Cooling Circuits Operating Without Heatsink 0.05 0.01 (°C) SLA5049 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 100V, RL=28.6, VGS=10V, Fig. page ISD=7A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) 5.5V ID-VGS Characteristics (Typical) (VDS=10V) RDS(ON)-ID Characteristics (Typical) (VGS=10V) TC=-40°C 25°C 125°C 4.5V (ON) VGS=4V Re(yfs)-ID Characteristics (Typical) (VDS=10V) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 2000 1000 ID=3.5A VGS=10V VGS=0V f=1MHz Ciss Capacitance (pF) (yfs) (ON) Coss 0.05 Crss (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (TC=25°C) (pulse) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating VGS= (on) LIMITED Without Heatsink 0.05 (°C) SLA5052 Absolute maximum ratings Symbol VDSS VGSS ID(pulse) EAS* Ratings N-channel General purpose (Ta=25°C) External dimensions (12-pin) Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 13.5 1500 Unit (Ta=25°C) Unit Conditions ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 70V, RL=14, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA VISO Tstg (PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150 VDD=25V, L=2.7mH, ID=10A, unclamped, RG=50, Fig. page sEquivalent circuit diagram Characteristic curves ID-VDS Characteristics (Typical) VGS=10V 3.5V ID-VGS Characteristics (Typical) (VDS=10V) RDS(ON)-ID Characteristics (Typical) VGS=4V 2.8V TC=-40°C 25°C 2.6V 125°C (ON) Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical) 5000 (VDS=10V) (ID=5A) VGS=0V f=1MHz Ciss (yfs) 25°C TC=-40°C Capacitance (pF) 1000 (ON) 125°C Coss Crss 0.05 (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (pulse) PT-Ta Characteristics (TC=25°C) With Silicone Grease Natural Cooling Circuits Operating (ON) LIMITED VGS=0 0.05 Without Heatsink 0.01 (°C) SLA5054 Absolute maximum ratings N-channel General purpose (Ta=25°C) Unit °C/W °C/W Vrms FET-1 External dimensions sEquivalent circuit diagram FET-1 FET-2 FET-2 (15-pin) Ratings Symbol FET1 FET2 FET3 VDSS VGSS +20, ID(pulse)*1 EAS*2 (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) VISO 1000 (Between lead pin, Tstg +150 PW100µs, duty50% VDD=25V, L=1.0mH, IL=5A unclamped, RG=50, Fig. page FET-3 FET-3 Electrical characteristics FET1 Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss td(on) td(off) FET2 FET3 (Ta=25°C) Specification Specification Specification Unit Conditions Unit Conditions Unit Conditions ID=100µA, VGS=0V ID=100µA, VGS=0V ID=100µA, VGS=0V VGS=20V VGS=20V VGS=20V VDS=150V, VGS=0V VDS=150V, VGS=0V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=250µA VDS=10V, ID=250µA VDS=10V, ID=3.5A VDS=10V, ID=2.5A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=10V, ID=2.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VGS=4V, ID=2.5A VGS=4V, ID=3.5A 1900 VDS=10V, VDS=10V, VDS=10V, f=1.0MHz, f=1.0MHz, f=1.0MHz, VGS=0V VGS=0V VGS=0V ID=3.5A, ID=2.5A, ID=3.5A, 70V, 70V, 70V, RL=20, RL=28, RL=20, VGS=5V, Fig.3 page VGS=5V, Fig.3 page VGS=5V, Fig.3 page ISD=7A, VGS=0V ISD=5A, VGS=0V ISD=7A, VGS=0V IF=±100mA IF=±100mA IF=±100mA Characteristic curves ID-VDS Characteristics (Typical) 3.0V 2.6V FET1 FET2 FET3 2.4V 2.8V 2.8V 2.6V 2.6V 2.2V 2.4V VGS=2.0V 2.4V VGS=2.2V VGS=2.2V ID-VGS Characteristics (Typical) FET1 FET2 (VDS=10V) FET3 (VDS=10V) -40°C -40°C TC=1 25°C 25°C -40° RDS(ON)-ID Characteristics (Typical) FET1 FET2 FET3 VGS=10V (ON) VGS=10V VGS=10V (ON) (ON) SLA5054 Re(yfs)-ID Characteristics (Typical) FET1 (VDS=10V) FET2 (VDS=10V) FET3 (VDS=10V) (yfs) (yfs) 25°C (yfs) 25°C 0.05 0.05 0.05 RDS(ON)-TC Characteristics (Typical) FET1 (ID=3.5A) FET2 (ID=2.5A) FET3 (ID=3.5A) (ON) (ON) (ON) (°C) (°C) (°C) VGS=0V f=1MHz Capacitance-VDS Characteristics (Typical) 10000 FET1 VGS=0V f=1MHz FET2 1000 FET3 5000 VGS=0V f=1MHz Ciss Capacitance (pF) Capacitance (pF) Capacitance (pF) Ciss 1000 Ciss 1000 Coss Coss Crss Crss Coss Crss IDR-VSD Characteristics (Typical) FET1 FET2 FET3 VGS=0V VGS=0V VGS=0V Safe Operating Area (SOA) FET1 (TC=25°C) FET2 FET3 (TC=25°C) (TC=25°C) (pulse) (pulse) (pulse) (on) LIMITED (on) LIMITED 0.05 1-Circuit Operation 0.05 1-Circuit Operation 0.05 1-Circuit Operation 0.01 0.01 0.01 PT-Ta Characteristics Without Heatsink With Silicone Grease Natural Cooling Circuits Operating (°C) SLA5055 Absolute maximum ratings Symbol VDSS VGSS (pulse)* N-channel General purpose External dimensions (Ta=25°C) (12-pin) Ratings +20, Unit °C/W °C/W Vrms (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) VISO Tstg PW100µs, duty50% (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150 sEquivalent circuit diagram FET-1 FET-2 FET-2 FET-2 FET-2 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) (VDS=10V) 2.8V 2.8V 2.6V 2.6V 2.4V 2.4V VGS=2.2V VGS=2.2V RDS(ON)-ID Characteristics (Typical) VGS=10V -40°C (VDS=10V) VGS=10V (ON) (ON) -40°C RDS(ON)-TC Characteristics (Typical) (ID=2.5A) (ID=3.5A) (ON) (ON) (°C) (°C) SLA5055 Electrical characteristics Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss (on) (off) Specification Unit Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, 70V, RL=28, VGS=5V, Fig.3 page ISD=5A, VGS=0V IF=±100mA Specification Unit Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 70V, RL=20, VGS=5V, Fig.3 page ISD=7A, VGS=0V IF=±100mA (Ta=25°C) Characteristic curves Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA) (VDS=10V) (VDS=10V) (pulse) (TC=25°C) (yfs) (yfs) 25°C 25°C 1-Circuit Operation 0.05 0.05 0.05 0.01 Capacitance-VDS Characteristics (Typical) 1000 VGS=0V f=1MHz 5000 VGS=0V f=1MHz (TC=25°C) Ciss (pulse) Capacitance (pF) Capacitance (pF) (on) LIMITED 1000 Ciss Coss 1-Circuit Operation Crss Coss Crss 0.05 0.01 IDR-VSD Characteristics (Typical) PT-Ta Characteristics With Silicone Grease Natural Cooling Circuits Operating VGS=0V VGS=0V Without H Other recent searchesTUSB3200 - TUSB3200 TUSB3200 Datasheet 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