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CAUTION WARNING
information this publication been carefully checked believed accurate; however, responsibility assumed inaccuracies. Sanken reserves right make changes without further notice products herein interest improvements performance, reliability, manufacturability products. Before placing order, Sanken advises customers obtain latest version relevant information verify that information being relied upon current. Application operation examples described this catalog quoted sole purpose reference products herein Sanken assume responsibility infringement industrial property rights, intellectual property rights other rights Sanken third party which result from use. When using products herein, applicability suitability such products intended purpose object shall reviewed users' responsibility. Although Sanken undertakes enhance quality reliability products, occurrence failure defect semiconductor products certain rate inevitable. Users Sanken products requested take, their risk, preventative measures including safety design equipment systems against possible injury, death, fires damages society device failure malfunction. Sanken products listed this catalog designed intended components general purpose electronic equipment apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing order, user's written consent specifications requested. When considering Sanken products applications where higher reliability required (transportation equipment control systems, traffic signal control systems equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative discuss obtain written confirmation your specifications. Sanken products without written consent Sanken applications where extremely high reliability required (aerospace equipment, nuclear power control systems, life support systems, etc.) strictly prohibited. Anti radioactive design considered products listed herein. This publication shall reproduced whole part without prior written approval from Sanken.
Ordering
Specify number standard minimum packaged units when placing order.
Standard minimum packaged unit
Package Type Series STA300 STA400 STA500
Cardboard
Stick
Reel
1200
Contents
Product index Part Number Product index function (Sink Driver) Product index function (Source Driver). Product index function (Motor Driver) Product index applications. Storage, characteristic inspection, handling precautions Avalanche energy capability MOSFET array Transistor array with built-in avalanche diode Switching time measurement External dimensions packages packages packages packages (surface mount)
Product index Part Number
Part Number SDA01 SDA05 SDC01 SDC03 SDC04 SDC06 SDC07 SDH02 SDH03 SDK02 SDK04 SLA4010 SLA4030 SLA4031 SLA4041 SLA4060 SLA4061 SLA4070 SLA4071 SLA4310 SLA4340 SLA4390 SLA4391 SLA5001 SLA5002 SLA5003 SLA5004 SLA5005 SLA5006 SLA5007 SLA5008 SLA5009 SLA5010 SLA5011 SLA5012 SLA5013 SLA5015 SLA5017 SLA5018 SLA5021 SLA5022 SLA5023 SLA5024 SLA5029 SLA5031 SLA5037 SLA5040 SLA5041 SLA5042 SLA5044 SLA5046 SLA5047 SLA5049 SLA5052 SLA5054 SLA5055 SLA5057 SLA5058 SLA5059 SLA5060 SLA5061 SLA5064 SLA5065 SLA5068 SLA5070 SLA5072 SLA5073 SLA5074 SLA5075 SLA5077 SLA5079 Classification Number chips VCEO VDSS (min) Source driver -1.5 2000 3-phase motor driver 2000 Sink driver 1000 Sink driver 60±10 2000 Sink driver 100±15 2000 Sink driver 3-phase motor driver 2000 Sink driver 2000 H-bridge driver +100/-60 ±1.5 2000 Sink driver Sink driver Sink driver 60±10 2000 Sink driver 2000 Sink driver 2000 Sink driver 1000 Sink driver 2000 Sink driver 2000 Source driver -100 1000 Source driver -100 2000 H-bridge driver H-bridge driver 2000 H-bridge driver ±100 2000 H-bridge driver ±100 1000 Sink driver Sink driver Sink driver Source driver Source driver -100 Source driver -100 H-bridge driver +5/-4 H-bridge driver ±100 +4/-3 3-phase motor driver +5/-4 3-phase motor driver ±100 +4/-3 Sink driver Source driver H-bridge driver ±100 Source driver 3-phase motor driver +5/-4 H-bridge driver +5/-4 Sink driver 3-phase motor driver 2000 3-phase motor driver ±100 2000 Source driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver Sink driver ±7/±5/±7 Sink driver ±5/±7 Sink driver ±7/±7 Sink driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 5-phase motor driver 5-phase motor driver Sink driver ±7/±7 3-phase motor driver 5-phase motor driver 5-phase motor driver 3-phase motor driver Sink driver 3-phase motor driver (ON) Package 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 16-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin with 15-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 15-pin with 12-pin with 12-pin with Page
0.24
0.22/0.55 0.6/1.3 0.22/0.55 0.6/1.3 0.22 0.3/0.7 0.55 0.22/0.55 0.22/0.55 0.19 0.22 0.55 0.55 0.45 0.08 0.175 0.185 0.25 0.35 0.085 0.115 0.105/0.44/0.2 0.44/0.2 0.175/0.35 0.55 0.22 0.14 0.14 0.105/0.2 0.14
Part Number SLA5080 SLA5081 SLA5085 SLA5086 SLA5088 SLA6012 SLA6020 SLA6022 SLA6023 SLA6024 SLA6026 SLA8001 SMA4020 SMA4021 SMA4030 SMA4032 SMA4033 SMA5101 SMA5102 SMA5103 SMA5104 SMA5105 SMA5106 SMA5112 SMA5114 SMA5117 SMA5118 SMA5125 SMA5127 SMA6010 SMA6014 SMA6511 SMA6512 STA301A STA302A STA302A STA303A STA303A STA304A STA305A STA308A STA312A STA322A STA371A STA401A STA402A STA403A STA404A STA406A STA408A STA412A STA413A STA421A STA431A STA434A STA435A STA457C STA458C STA460C STA471A STA472A STA473A STA475A STA481A STA485A STA501A STA504A STA505A STA506A
Classification Number chips VCEO VDSS (min) 3-phase motor driver Sink driver ±7/±7 Sink driver Source driver Sink driver ±5/±7 3-phase motor driver 2000 3-phase motor driver ±100 2000 3-phase motor driver 2000 3-phase motor driver 2000 3-phase motor driver 2000 3-phase motor driver 2000 H-bridge Source driver 2000 Source driver 2000 Sink driver 2000 Sink driver 2000 Sink driver 2000 Sink driver Sink driver H-bridge driver +5/-4 3-phase motor driver +5/-4 Sink driver Sink driver 3-phase motor driver Sink driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 3-phase motor driver 2000 3-phase motor driver 1500/2000 Stepper motor driverr with 100±15/-60 1.5/-3 2000 Dual Supply Voltage Switch Stepper motor driverr with 60±10/-60 1.5/-3 2000 Dual Supply Voltage Switch Sink driver 60±10 1000 Source driver 1000 3-phase motor driver 1000 Sink driver 1000 3-phase motor driver 1000 3-phase motor driver 3-phase motor driver -550 Source driver -120 2000 Sink driver Source driver Sink driver 60±10 2000 Sink driver 60±10 1000 Source driver 1000 Sink driver 1000 Sink driver 1000 Sink driver 60±10 2000 Source driver -120 2000 Sink driver Sink driver 35±5 Source driver H-bridge driver H-bridge driver 1000 Sink driver 65±15 1000 H-bridge driver 2000 H-bridge driver Sink driver 60±10 Sink driver 60±10 2000 Source driver 2000 Sink driver 2000 Sink driver 100±15 2000 Sink driver 60±10 2000 Sink driver 100±15 2000 Sink driver Sink driver Sink driver Sink driver
(ON) 0.14 0.105/0.2 0.22 0.22 0.44/0.2
0.22/0.55 0.22/0.55 0.55 0.25 0.25 0.14 0.55
Package 12-pin with 15-pin with 12-pin with 12-pin with 15-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 12-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 8-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin 10-pin
Page
0.45
Product index function
Part Number Number chips STA460C STA371A STA301A SDC06 STA413A STA481A SDC03 STA471A STA401A SLA4010 STA406A STA435A STA485A SDC04 STA475A VCEO 60±10 60±10 60±10 35±5 60±10 60±10 60±10 60±10 60±10 60±10 65±15 100±15 100±15 100±15
Sink driver
Package 10-pin 8-pin 8-pin 16-pin 10-pin 10-pin 16-pin 10-pin 10-pin 12-pin with 10-pin 10-pin 10-pin 16-pin 10-pin Page
qWith built-in avalanche diode between collector base
(min) (ON) Equivalent circuit 2000 1000 2000 2000 2000 1000 2000 2000 1000 2000 2000 2000
qWith built-in flywheel diode
Part Number Number chips VCEO VDSS SDK02 SMA5114 SLA5031 SDH02 SMA4033 SMA4032 SLA5040 SMA5102 SMA5106 SLA5002 SMA5105 SLA4031 SLA4061 SLA4041 SLA5003 (min) (ON) Equivalent circuit 0.24 0.25 0.55 Package 16-pin 12-pin 12-pin with 16-pin 12-pin 12-pin 12-pin with 12-pin 12-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with Page
2000 2000 2000
2000 2000 1000
qGeneral purpose
Part Number Number chips VCEO VDSS STA312A STA303A SDC01 STA412A STA504A STA501A STA473A STA506A SDK04 SMA4030 STA505A STA403A SLA4030 SMA5101 SLA5001 SLA5037 SLA4060 SLA5047 SLA5052 STA404A SLA5041 SLA5044 SLA5029 SLA5011 SLA5085 SLA5021 SLA5042 SLA5055 ±5/±7 SLA5088 ±5/±7 SLA5058 SLA5081 ±7/±7 SLA5046 SLA5049 SLA5054 ±7/±5/±7 SLA5070 ±7/±7 SLA5057 ±7/±7 (min) (ON) Equivalent circuit 1000 0.45 2000 2000 1000 2000 0.08 2000 0.085 0.115 1000 0.175 0.25 0.45 0.22 0.22 0.19 0.185 0.44/0.2 0.44/0.2 0.105/0.2 0.35 0.105/0.44/0.2 0.105/0.2 0.175/0.35 Package 8-pin 8-pin 16-pin 10-pin 10-pin 10-pin 10-pin 10-pin 16-pin 12-pin 10-pin 10-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 10-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin with 15-pin with 12-pin with 12-pin with 15-pin with 15-pin with 15-pin with Page
qEquivalent circuit (Sink driver)
Product index function Source driver
qWith built-in flywheel diode
Part Number Number chips VCEO VDSS SMA4021 SLA4071 -100 SLA5006 -100 (min) (ON) Equivalent circuit Package 2000 12-pin 2000 12-pin with 12-pin with Page
qGeneral purpose
Part Number Number chips VCEO VDSS STA322A STA302A STA308A -120 STA402A SDA01 -1.5 STA472A STA421A SMA4020 SLA5024 SLA5004 SLA4070 -100 SLA5005 -100 STA408A -120 SLA5015 SLA5012 SLA5086 (min) (ON) Equivalent circuit 1000 2000 1000 2000 2000 2000 0.55 1000 2000 0.55 0.22 Package 8-pin 8-pin 8-pin 10-pin 16-pin 10-pin 10-pin 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 10-Pin 12-pin with 12-pin with 12-pin with Page
qEquivalent circuit (Source driver)
Product index function Motor driver
qH-bridge driver
Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit STA458C STA431A STA434A 1000 STA457C 2000 SLA4310 SLA4340 2000 SLA5007 +5/-4 0.22/0.55 SLA5018 +5/-4 0.22/0.55 SMA5103 +5/-4 0.22/0.55 SLA8001 SDH03 ±100/-60 ±1.5 2000 SLA5008 ±100 +4/-3 0.6/1.3 SLA4390 ±100 2000 SLA4391 ±100 1000 SLA5013 ±100 0.3/0.7 Package 10-pin 10-pin 10Pin 10-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin with 16-pin 12-pin with 12-pin with 12-pin with 12-pin with Page
q3-phase motor driver
Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit SDC07 2000 SLA5080 0.14 STA303A 1000 STA304A STA302A 1000 SDA05 2000 SLA5079 0.14 STA305A -550 SLA5059 0.55 SLA5060 0.22 SLA5061 0.14 SLA5064 0.14 SMA6014 1500/2000 SMA6010 2000 SLA6012 2000 SMA5127 0.55 SLA5009 +5/-4 0.22/0.55 SLA5017 +5/-4 0.22/0.55 SMA5104 +5/-4 0.22/0.55 SLA5022 2000 0.22 SLA6023 2000 SLA6024 2000 SLA6026 2000 SMA5125 0.14 SLA6022 2000 SLA5010 ±100 +4/-3 0.6/1.3 SLA6020 ±100 2000 SLA5023 ±100 2000 0.55 SLA5072 SMA5112 SMA5117 0.25 SLA5075 SMA5118 Package 16-pin 12-pin with 8-pin 8-pin 8-pin 16-pin 12-pin with 8-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin 12-pin with 12-pin 12-pin with 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 12-pin 12-pin with 12-pin with 12-pin with 12-pin with 15-pin with 12-pin 12-pin 15-pin with 12-pin Page
qStepper motor driver with dual supply voltage switch
Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit Package SMA6511 100±15/-60 1.5/-3 2000 12-pin SMA6512 60±10/-60 1.5/-3 2000 12-pin Page
q5-phase motor driver
Part Number Number chips VCEO VDSS (min) (ON) Equivalent circuit SLA5074 SLA5065 SLA5073 SLA5068 Package 15-pin with 15-pin with 15-pin with 15-pin with Page
qEquivalent circuit (Motor driver)
Product index applications
Product type Application Typical circuit example Transistor Darlington qSolenoid qRelay STA301A STA371A STA401A STA406A STA435A STA471A STA475A STA481A STA485A STA4010 SDC04 SDC03 SLA4031 SLA4041 SLA4060 SMA4032 SMA4033 SDH02 SLA5002 SLA5003 SLA5031 SLA5040 SMA5102 SMA5105 SMA5106 SMA5114 SDK02 SLA4071 SMA4021 SLA5006 Single STA460C STA413A SDC06 MOSFET
STA302A STA308A STA402A STA408A STA472A SLA4070 SMA4020 SDA01
STA322A STA421A
SLA5004 SLA5005 SLA5024
Product type Application Typical circuit example Transistor Darlington motor Forward-reverse control STA434A STA457C SLA4340 STA4390 SDH03 Single STA431A STA458C SLA4310 SLA8001 MOSFET
control
SLA4391
SLA5007 SLA5008 SLA5013 SLA5018 SMA5103
q3-phase brushless motor
STA302A+STA303A SMA6010 SLA6020 SDA05+SDC07
100V direct drive 200V direct drive
SLA5072 SLA5075 SMA5112 SMA5117 SMA5118
200V direct drive
STA304A+STA305A
control
SLA6012 SLA6022 SLA6023 SLA6024 SLA6026 SMA6014 SLA5022 SLA5023
SLA5009 SLA5010 SLA5017 SLA5059 SLA5060 SLA5061 SLA5064 SLA5079+SLA5080 SMA5104 SMA5125 SMA5127
Product index applications
Product type Application Typical circuit example Transistor Darlington qStepper motor Constant voltage drive STA401A STA406A STA435A STA471A STA475A STA481A STA485A SLA4010 SDC04 SDC03 SMA6511 SMA6512 Single STA460C STA413A SDC06 MOSFET
Dual supply voltage drive
Bipolar drive
STA473A STA472A STA408A STA404A STA403A STA402A SMA4030 SMA4020 SLA4070 SLA4060 SLA4030 SDA01
STA421A STA412A SDC01
STA506A STA505A STA504A STA501A SMA5101 SLA5024 SLA5005 SLA5004 SLA5001
Product type Application q5-phase motor Typical circuit example SLA5011 SLA5029 SLA5065+SLA5068 SLA5073+SLA5074 SLA5085 N-CH SLA5012 SLA5015 SLA5086 P-CH
Application q"S" shape correction switch
Typical circuit example
Product type 100V SLA5021 SLA5037 SLA5042 150V SLA5047 SLA5052 SLA5054 SLA5055 SLA5058 SLA5070 SLA5077 SLA5081 SLA5088 200V SLA5041 SLA5046 SLA5057 250V SLA5044 SLA5049
Storage, characteristic inspection, handling precautions
Inappropriate storage, characteristic inspection, handling impair reliability device. ensure high reliability, observe following precautions:
Soldering temperature
soldering necessary, take care keep application heat brief possible, within following limits: 260±5°C 350°C (soldering iron)
Storage precautions
recommended store device room temperature (between 35°C) relative humidity 75%. Avoid storing device place where temperature humidity high changes greatly. Store device clean place that exposed direct sunlight, free from corrosive harmful gases. device stored long time, check solderability lead condition before using device.
Heatsink
large contact area between device heatsink effective heat radiation required. ensure large contact area, minimize mounting holes select heatsink with sufficiently smooth surface that free from burring metal debris.
Precautions characteristic inspections
When carrying characteristic inspections receiving products other occasions, take care avoid applying surge voltage from measuring equipment check terminals measuring equipment short circuit wiring errors. Measure device within range rated values.
Handling precautions protect power MOSFET arrays from static damage
When handling device, physical grounding necessary. Wear wrist strap with resistor close body wrist strap prevent electric shock. conductive tablemat floor device handling workbench ensure grounding. When using curve tracer other measuring equipment, ground equipment well. When soldering, ground soldering iron tank prevent leakage voltage from damaging device. Store device shipping container conductive container aluminum foil protect device from static electricity.
Silicone Grease
When attaching heatsink, apply small amount silicone evenly back device both sides insulator reduce thermal resistance between device heatsink. Recommended silicone grease
qG746 qYG6260 qSC102 SHINETSU SILICONE CO., LTD. TOSHIBA SILICONE CO., LTD. CORNING TORAY SILICONE CO., LTD.
Please select silicone grease carefully since some grease penetrate product, which will result extremely short product life.
Screw tightening torque
screws tightened with sufficient torque, this increase thermal resistance reduce radiation effect. Tightening screws with great torque damage screw thread, deform heatsink, twist device frame until damaged. Therefore, tighten screws with torque between 0.588 0.784 cm).
Avalanche energy capability MOSFET array
What avalanche energy capability
When MOSFET used high-speed switching, inductive load wiring inductance cause counter electromotive voltage cutoff that device cannot withstand. Avalanche energy capability non-clamped ability withstand damage expressed energy. long energy applied device cutoff within guaranteed avalanche energy capability, device will damaged even drain-source voltage exceeds capability. example, drain-source voltage that within guaranteed capability when electrically stationary exceed limit startup cutoff. Usually, snubber circuit similar surge absorbing circuit used keep drain-source voltage within guaranteed capability. Sanken MOSFETs, however, require this kind protective circuit because avalanche energy capability guaranteed. Sanken MOSFETs enable number parts reduced, saving board area. Consult engineering department Sanken when planning MOSFETs avalanche mode.
Sanken MOSFETs feature guaranteed avalanche energy capability.
Temperature derating
value specifications guaranteed when channel temperature 25°C. Since value drops channel temperature rises, derating depending temperature necessary. Fig. shows derating curve single avalanche energy capability. This derating curve channel temperature (Tch (start)) immediately before avalanche occurs product, with value (maximum rating) 25°C 100%. example, product temperature 50°C, value derated value 25°C.
Fig.
(start)
EAS(normalized)
calculation method
current inductive load moment when MOSFET off, expressed follows: VDSS ILP2 VDSS *VDD Supply voltage value known actual circuit, also calculated from actual voltage current waveforms follows: Surge power Surge time following calculation used determine where voltage current shown Fig. applied MOSFET circuit Integrate overlapping section calculate When waveform triangular, will follows: 10(A) 550(V) 10(µs) 27.5(mJ)
(start) (°C)
Continuous avalanche energy capability
This section explains derating method continuous avalanche. Considering continuous avalanche repetition single avalanche, safe operating area (SOA) determined using derating curve shown Fig. Calculate energy (start) avalanche worst condition determine using calculated data derating curve shown Fig. temperature rise avalanche should cause channel temperature exceed maximum rating. following example determining judgment calculation when MOSFET enters transient avalanche state power-on then changes stationary state Supposing that waveform shown Fig. until MOSFET changes stationary state, calculate start loss switching (turn-on/off) loss. simplify calculation, average loss last waveforms used approximation. (Fig. First, calculate channel temperature time where temperature condition severest. value within maximum rating, there problem temperature concerned.
Fig.
550V (VDSS)
550V (VDSS)
Tch() rch-c rch-c rch-c rch-c rch-c rch-c rch-c rch-c (t6).3 Ambient temperature *rch-c Transient thermal resistance pulse width Then calculate channel temperature immediately before avalanche. Tch() rch-c rch-c rch-c rch-c rch-c (T') rch-c rch-c rch-c (t6).4 This value becomes (start). avalanche energy (EAS within value derated from guaranteed value temperature, there problem avalanche energy concerned.
Avalanche energy capability measuring method
Fig.
Measuring circuit
V(BR)DSS ILp2 V(BR)DSS V(BR)DSS Output waveform
Fig.
Transient
Stationary
T(n) Avalanche this section
Fig.
T(n)
Transistor array with built-in avalanche diode
Darlington transistor chip with built-in avalanche diode planar type monolithic Darlington transistor chip having equivalent circuit shown figure right. Surge Voltage absorbed avalanche diode provided between collector base. This eliminated need extra components absorbing surge caused counter electromotive force produced inductive load switch circuits. These Darlington transistor arrays ideal relay drive, solenoid drive, printer wire drive applications.
SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03,
Switching time measurement
Transistor array
Fig.
Measuring circuit +VBB2 -VBB1 Input-output waveform Base current Collector current 0.1IC 0.9IC tstg D.U.T -VCC
array
Fig.
Measuring circuit P.W.=10 Duty cycle1%
Input-output waveform
td(on) td(off) toff
Fig.
Measuring circuit +VBB1 D.U.T -VBB2 Input-output waveform Base current Collector 0.9IC current 0.1IC
Fig.
Measuring circuit
P.W.=10 Duty cycle1%
Input-output waveform
td(on) td(off) toff
tstg
External dimensions
(12-pin)
31.5max
3.2±0.15
(unit:
(8-pin)
20.4
31.0±0.2 24.4±0.2
Ellipse3.2±0.15
4.8±0.2
11.3±0.2 4.7±0.5
16.0±0.2
13.0±0.2
9.0±0.2
1.7±0.1
9.5min
1.0±0.25
Pin1
+0.2 +0.2
0.5±0.15
(2.54)
P2.54=17.78
0.55-0.1 2.2±0.7
1.2±0.15
1.45±0.15 P2.54±0.7 27.94±1.0
1.2±0.2
0.85-0.1
0.5±0.15
C1.5±0.5
Part
4.0±0.2
Weight Approx. 6.0g
Weight Approx. 2.0g
(15-pin)
31.3±0.2
(10-pin)
25.25±0.2
3.2±0.15
31.0±0.2 24.4±0.2 16.4±0.2
4.8±0.2 1.7±0.1
11.3±0.2
2.3±0.2
9.0±0.2
13.0±0.2
16.0±0.2
9.9±0.2
2.45±0.2
4.7±0.5
(3.0) 6.7±0.5
9.7-0.5
+1.0
1.0±0.25
0.5±0.15 2.54 22.86±0.25
(2.54)
R-End
0.5±0.15
1.2±0.2
0.65-0.1 P2.03±0.7=28.42±1.0
+0.2
1.15-0.1
+0.2
0.55-0.1 4.0±0.7
+0.2
C1.5±0.5
4.0±0.2
Part
Weight Approx. 6.0g
Weight Approx. 2.6g
0.89±0.15 31.0±0.2 4.0±0.2 2.5±0.2 0.75-0.05
+0.15
2.54±0.25
10.2±0.2
6.8max
8.0±0.5
20.0max 19.56±0.2
(10.4)
6.3±0.2
+0.15 0.3-0.05
27.94
0.55-0.1
+0.2
1.2±0.1
1.0±0.3
3.0±0.2 9.8±0.3
3.6±0.2 1.4±0.2
2.54
0.85-0.1
+0.2
0.25
1.46±0.15
0~0.1
4.0max
Part
Part
Weight Approx. 4.0g
Weight Approx. 1.05g
SLA4010
Absolute maximum ratings
Symbol VCBO VCEO VEBO Tstg Ratings 60±10 60±10 (PW10ms, Du50%) (Ta=25°C) (Tc=25°C) +150
Darlington With built-in avalanche diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification unit
(Ta=25°C)
Unit
Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000
(VCE=4V)
(VCE=4V)
1.0mA 0.8mA 0.6mA
5000
5000
1000
0.5mA
0.4mA
1000
0.3mA
0.05
0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=-4V)
(sat)
(sat)
25°C 125°C
Ta=-30°C
IC=4A IC=2A IC=3A
75°C
25°C
-30°C
IC=1A
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
init
tsin
Without Heatsink
Single Pulse
Without Heatsink
Ta=25°C
1000
0.05
(mS)
(°C)
SLA4030
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Darlington General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit
(Ta=25°C)
Unit Vrms °C/W
Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=2A IC=2A, IB=10mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000
(VCE=2V)
(VCE=2V)
0.8mA 0.6mA 0.5mA 0.4mA
5000
5000
1000
0.3mA
0.05
1000
0.02
0.02
0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=500)
(VCE=2V)
25°C
(sat)
(sat)
25°C
75°C
IC=4A IC=2A
IC=1A
75°C 25°C
-30°C
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
init tsin
Without Heatsink
Single Pulse
0.05 Without Heatsink
1000
(mS)
(°C)
0.03
Ta=25°C
SLA4031
Absolute maximum ratings
Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings (PW1ms, Du50%) (PW0.5ms, Du25%) (PW10ms, Single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Darlington With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO (sat) (sat) tstg Specification 2000 5000 15000 Specification Unit
(Ta=25°C)
Unit Vrms °C/W
Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA 40V, IC=2A, IB1=-IB2=10mA
(Ta=25°C)
qDiode flyback voltage absorption
Symbol Unit
Conditions IR=10µA IF=1A VR=120V IF=±100mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
0.8m
0.6mA
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
(VCE=2V)
(VCE=2V)
0.5mA
5000
0.4mA
0.3mA
1000
1000
0.02
0.02
0.05
0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=500)
(VCE=2V)
(sat)
(sat)
Ta=1
25°C
75°C
25°C
IC=4A IC=2A
IC=1A
75°C 25°C
-30°C
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
Without Heatsink
init tsin
Single Pulse
0.05 Without Heatsink
1000
0.03
Ta=25°C
(mS)
(°C)
SLA4041
Absolute maximum ratings
Symbol VCBO VCEO VEBO IFSM Tstg Ratings (PW10ms, Du50%) (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) +150
Darlington With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC Specification 1000 6000 15000 Specification Unit
(Ta=25°C)
Unit
Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1.5A IC=1.5A, IB=3mA IFEC=2.0A
(Ta=25°C)
qDiode flyback voltage absorption
Symbol Unit
Conditions IR=10µA IF=1A VR=200V IF=±100mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
5000
hFE-IC Temperature Characteristics (Typical)
5000
(VCE=4V)
(VCE=4V)
IB=2
1000
1000
0.03 0.05
0.03 0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=100)
(VCE=4V)
Ta=125 75°C 25°C -30°C
(sat)
(sat)
IC=3A
IC=1A
IC=1.5A
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
init
tsin
Without Heatsink
0.05
Single Pulse Without Heatsink
1000
0.03 Ta=25°C
(mS)
(°C)
SLA4060
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Darlington General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) tstg 2000 5000 15000 Specification Unit
(Ta=25°C)
Unit Vrms °C/W
Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A IC=3A, IB=3mA 30V, IC=3A, IB1=-IB2=3mA
sEquivalent circuit diagram
2.5k
Characteristic curves
IC-VCE Characteristics (Typical)
0.8mA 0.7mA IB=2mA
0.5m
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
0.6mA
(VCE=2V)
(VCE=2V)
5000
0.4m
1000
1000
0.05
0.02
0.02
0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=2V)
(sat)
(sat)
25°C 75°C
Ta=-30°C
IC=5A IC=3A
75°C 25°C
-30°C
125°C
IC=1A
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
init
tsin
Without Heatsink
Single Pulse
0.05 Without Heatsink
1000
Ta=25°C
0.03
(mS)
(°C)
SLA4061
Absolute maximum ratings
Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings (PW1ms, Du50%) (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Darlington With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) tstg Specification 2000 5000 15000 Specification Unit
(Ta=25°C)
Unit Vrms °C/W
Conditions VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A IC=3A, IB=3mA 30V, IC=3A, IB1=-IB2=3mA
(Ta=25°C)
qDiode flyback voltage absorption
Symbol Unit
Conditions IR=10µA IF=1A VR=120V IF=±100mA
sEquivalent circuit diagram
2.5k
Characteristic curves
IC-VCE Characteristics (Typical)
0.8mA 0.7mA 0.6mA 0.5mA
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
(VCE=2V)
(VCE=2V)
0.4mA
5000
1000
1000
0.02
0.02
0.05
0.05
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=2V)
(sat)
(sat)
25°C 75°C 125°C
IC=3A
IC=1A
(mA)
75°C 25°C -30°C
Ta=-30°C
IC=5A
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
init
tsin
Without Heatsink
Single Pulse
0.05 Without Heatsink
1000
0.03 Ta=25°C
(mS)
(°C)
SLA4070
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg Ratings -100 -100 (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Darlington General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) -100 1000 5000 -1.0 -1.6 15000 -1.5 -2.0 Specification Unit
(Ta=25°C)
Unit Vrms °C/W
Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-2V, IC=-3A IC=-3A, IB=-6mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
-4mA -2mA
hFE-IC Characteristics (Typical)
10000 5000
hFE-IC Temperature Characteristics (Typical)
10000 5000
(VCE=-4V)
(VCE=-4V)
-1.2mA
-0.8mA
1000
1000
-0.6mA
-0.4mA
-0.03
-0.03
-0.1
-0.5
-0.1
-0.5
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=-4V)
(sat)
(sat)
-30°C
75°C 125°C
25°C
-0.3
-0.5
-0.3
-100 -200
Ta=1 25°C 75°C 25°C -30°C
(mA)
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
(°C/W)
-0.5
Without Heatsink
-0.1
Single Pulse
-0.05 Without Heatsink
1000
-0.03
Ta=25°C
-100
(mS)
(°C)
SLA4071
Absolute maximum ratings
Symbol VCBO VCEO VEBO IFSM VISO Tstg Ratings -100 -100 (PW1ms, Du50%) -0.5 (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°) 1000 (Between lead pin, +150
Darlington With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) Specification -100 2000 5000 15000 -1.0 -1.5 -1.6 -2.0 Unit
Unit Vrms °C/W
Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-2V, IC=-3A IC=-3A, IB=-6mA
(Ta=25°C)
qDiode flyback voltage absorption
Symbol Specification Unit
Conditions IR=10µA IF=1A VR=120V IF=±100mA
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
10000 5000
hFE-IC Temperature Characteristics (Typical)
10000 5000
(VCE=-4V)
(VCE=-4V)
-1.2
-0.8mA
1000
1000
-0.6mA
-0.4mA
-0.03
-0.03
-0.1
-0.5
-0.1
-0.5
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=-4V)
(sat)
(sat)
IC=-5A IC=-3A
75°C 125°C
-0.3
-0.5
-0.3 -0.5
-100 -200
(mA)
Ta=1
j-a-PW Characteristics
PT-Ta Characteristics
With Silicone Grease Natural Cooling Heatsink: Aluminum
Safe Operating Area (SOA)
25°C 75°C 25°C -30°C
Ta=-30°C 25°C
IC=1A
init tsin
-0.5
Without Heatsink
-0.1
Single Pulse
-0.05 Without Heatsink
1000
-0.03 Ta=25°C
-100
(mS)
(°C)
SLA4310
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%)
H-bridge
External dimensions
(12-pin)
(Ta=25°C)
Ratings (PW1ms, Du50%) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Unit Vrms °C/W
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
60mA 50mA
40mA 30mA
IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
20mA
-30mA
-20mA
10mA
-10mA
-5mA
-30°C
hFE-IC Characteristics (Typical)
(VCE=4V)
(VCE=-4V)
(VCE=-4V)
0.01
0.05
-0.01
-0.05 -0.1
-0.5
-0.5
-1.0
-1.5
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=-4V)
Ta=125°C 75°C
25°C
Ta=125°C 75°C
25°C
-30°C
-30°C
0.01
0.05
-0.01
-0.05
-0.5
SLA4310
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) Specification Unit Conditions VCB=60V VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A -0.6 Specification Unit Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-1A IC=-2A, IB=-0.2A
(Ta=25°C)
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
j-a-PW Characteristics
-1.5
(sat)
(sat)
-1.0
IC=3
-0.5
0.005 0.01
0.05
-0.005 -0.01
-0.05 -0.1 -0.5
1000
(mS)
VCE(sat) VBE(sat)-IC Characteristics (Typical)
PT-Ta Characteristics
IB=10)
With Silicone Grease Natural Cooling Heatsink: Aluminum
IB=10)
-1.0
(sat) (sat)
VCE(sat) VBE(sat)
(sat)
-0.5
(sat)
Without Heatsink
(sat)
(sat)
0.05
-0.05
-0.1
-0.5
(°C)
Safe Operating Area (SOA)
-0.5
Single Pulse
Single Pulse
Without Heatsink
T=25°C
-0.1 Without Heatsink
Ta=25°C
0.05
-0.05
-100
SLA4340
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%)
Darlington H-bridge
External dimensions
(12-pin)
(Ta=25°C)
Ratings (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Unit Vrms °C/W
sEquivalent circuit diagram
Characteristic curves
IC-VCE Characteristics (Typical)
IB=4.0mA 2.0mA
IC-VBE Temperature Characteristics (Typical)
-1.8
(VCE=4V)
-1.5mA -1.2mA -1.0mA
1.2mA
0.8mA
0.4mA
75°C 25°C
0.5mA
-0.8mA
-30°C
25°C
0.6mA
-0.9mA
hFE-IC Characteristics (Typical)
10000 5000
(VCE=4V)
10000
(VCE=-4V)
(VCE=-4V)
5000
75°C
25°C
0.03
-0.03
-0.1
-0.5
-30°C
1000
1000
Ta=125
hFE-IC Temperature Characteristics (Typical)
10000 5000
(VCE=4V)
10000 5000
(VCE=-4V)
1000
1000
75°C 25°C
0.03
-0.03
-0.1
-0.5
SLA4340
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA 2000 -1.5 Specification Unit Conditions VCB=-60V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA
(Ta=25°C)
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
j-a-PW Characteristics
(sat)
(sat)
IC=4A
IC=-4A
IC=2A IC=1A
IC=-2A IC=-1A
-0.2
-0.5
-100
1000
(mA)
(mA)
(mS)
VCE(sat)-IC Temperature Characteristics (Typical)
25°C
PT-Ta Characteristics
IB=1000)
With Silicone Grease Natural Cooling Heatsink: Aluminum
IB=1000)
75°C
(sat)
(sat)
init
25°C 75°C
tsin
Ta=-30°C
125°C
Without Heatsink
-0.5
(°C)
Safe Operating Area (SOA)
-0.5
0.05 Without Heatsink 0.03 Ta=25°C
Single Pulse
-0.1 -0.05 Without Heatsink -0.03 Ta=25°C -100
Single Pulse
SLA4390
Absolute maximum ratings
Symbol VCBO VCEO VEBO VISO Tstg (PW1ms, Du50%)
Darlington H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratings -100 -100 (PW1ms, Du50%) -0.5 (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Unit Vrms °C/W
sEquivalent circuit diagram
2.5k
Characteristic curves
IC-VCE Characteristics (Typical)
0.8mA
IC-VBE Temperature Characteristics (Typical)
IB=-4mA -2mA -1.2mA
(VCE=4V)
0.7m
-0.8mA
0.6m
0.5mA
-0.6mA
0.4mA
hFE-IC Characteristics (Typical)
20000 10000 5000
(VCE=4V)
20000 10000
Ta=1
75°C 25°C -30°C
-0.4mA
25°C
(VCE=-4V)
(VCE=-4V)
5000
1000
1000
0.03 -0.03
25°C -30°C
-0.1
-0.5
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
25°C
(VCE=4V)
20000 10000 5000
(VCE=-4V)
1000
75°C
1000
25°C
0.03 0.05
-0.03 -0.05
-0.1
-0.5
SLA4390
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) 2000 Specification Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA -100 2000 -1.5 Specification Unit Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA
(Ta=25°C)
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
j-a-PW Characteristics
(sat)
(sat)
-500
IC=-5A IC=-3A
IC=5A IC=3A
IC=1A
IC=-1A
-0.2
-0.5
-100
1000
(mA)
(mA)
(mS)
VCE(sat)-IC Temperature Characteristics (Typical)
PT-Ta Characteristics
IB=1000)
With Silicone Grease Natural Cooling Heatsink: Aluminum
IB=1000)
Ta=125°C
(sat)
(sat)
75°C 25°C
init tsin
Ta=-30°C
75°C
25°C
125°C
Without Heatsink
-0.3
-0.5
(°C)
Safe Operating Area (SOA)
Single Pulse Ta=25°C
-0.5
0.05 Without Heatsink 0.03
-0.1
Single Pulse
-0.05 Without Heatsink -0.03
Ta=25°C
-100
SLA4391
Absolute maximum ratings
Symbol VCBO VCEO VEBO IFSM VISO Tstg
Darlington H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratings -100 -100 (PW1ms, Du50%) (PW1ms, Du50%) -0.5 (PW0.5ms, Du25%) (PW10ms, single) (Ta=25°C) (Tc=25°C) 1000 (Between lead pin, +150
Unit Vrms °C/W
sEquivalent circuit diagram
2.5k
Characteristic curves
IC-VCE Characteristics (Typical)
0.8mA
IC-VBE Temperature Characteristics (Typical)
IB=-4mA -2mA -1.2mA
-0.8mA
(VCE=4V)
0.7m
0.5mA
-0.6mA
0.4mA
25°C -30°C
-0.4mA
hFE-IC Characteristics (Typical)
20000 10000 5000
(VCE=4V)
20000 10000
(VCE=-4V)
(VCE =-4V)
5000
1000
1000
-0.03
0.03
-0.1
-0.5
25°C -30°C
75°C
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
(VCE=4V)
20000 10000 5000
(VCE=-4V)
1000
75°C 25°C
1000
75°C 25°C
0.03
-0.03
-0.1
-0.5
SLA4391
Electrical characteristics
Symbol ICBO IEBO VCEO VCE(sat) Specification 1000 Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA
(Ta=25°C) (Ta=25°C)
Specification -100 1000 -1.5 Unit Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA
qDiode flyback voltage absorption
Symbol Specification Unit
Conditions IR=10µA IF=1A VR=100V
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
j-a-PW Characteristics
(sat)
(sat)
-500
IC=-5A IC=-3A
IC=5A IC=3A
IC=1A
IC=-1A
-0.2
-0.5
-100
1000
(mA)
(mA)
(mS)
VCE(sat)-IC Temperature Characteristics (Typical)
PT-Ta Characteristics
IB=1000)
With Silicone Grease Natural Cooling Heatsink: Aluminum
IB=1000)
75°C
Ta=125
(sat)
(sat)
25°C
init
tsin
Ta=-30°C
75°C
25°C
125°C
Without Heatsink
-0.3
-0.5
(°C)
Safe Operating Area (SOA)
Single Pulse
-0.5
0.05 Without Heatsink 0.03
Ta=25°C
-0.1
Single Pulse
-0.05 Without Heatsink
-0.03
Ta=25°C
-100
SLA5001
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings ±10(PW1ms) (Ta=25°C, with circuits operating, without heatsink)
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.27 0.30 Specification ±500 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA
(Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
(ON)
TC=-40°C 25°C 125°C
VGS=4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
Ciss
Capacitance (pF)
(yfs)
(ON)
Coss
TC=-40°C 25°C 125°C
0.05
Crss
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5002
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms)
N-channel With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.27 0.30 Specification Unit
(Ta=25°C)
Unit
Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA
VISO Tstg
(PW0.5ms, Du25%) (PW10ms, Single Pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
qDiode flyback voltage absorption
Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA
VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
(VDS=10V)
RDS(ON)-ID Characteristics (Typical)
(VGS=10V)
(ON)
TC=-40°C 25°C 125°C
VGS=4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
Ciss
Capacitance (pF)
(yfs)
Coss
(ON)
TC=-40°C
25°C 125°C
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5003
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings
N-channel With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.67 Specification Unit
(Ta=25°C)
Unit
Conditions ID=250µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 100V,VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms) 5(PW0.5ms, Du25%) 10(PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
qDiode flyback voltage absorption circuit)
Symbol Unit Conditions IR=10µA IF=1A IF=5A VR=200V IF=±100mA
VDD=20V, L=10mH, ID=3.5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
TC=-40°C
(ON)
VGS=5V
25°C 125°C
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
TC=-40°C 25°C
Ciss
(yfs)
125°C
Capacitance (pF)
(ON)
Coss
0.05
Crss
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
LIMI
With Silicone Grease Natural Cooling Circuits Operating
VGS=0V
0.05 0.03
Without Heatsink
(°C)
SLA5004
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink)
P-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.22 -4.5 -5.5 0.30 Specification -250 -4.0 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -30V,VGS=-10V, Fig. page ISD=-5A ISD= 100mA
(Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
--10
-10V
ID-VGS Characteristics (Typical)
TC=-40°C 25°C
RDS(ON)-ID Characteristics (Typical)
0.25
(VDS=-10V)
(VGS=-10V)
125°C
0.20
0.15
(ON)
0.10
0.05
VGS=-4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
2000
(VDS=-10V)
ID=-5A VGS=-10V
1000
Capacitance (pF)
(yfs)
Coss
(ON)
TC=-40°C
25°C 125°C
Crss
-0.1
-0.5
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
-0.5
Without Heatsink
-0.1 -0.5
-100
(°C)
VGS=0V f=1MHz
Ciss
SLA5005
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) Ratings -100 (PW1ms) (Ta=25°C, with circuits operating, without heatsink)
P-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.55 -4.5 -5.5 Specifications -100 -250 -4.0 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Condition ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -50V, VGS=-10V, Fig. page ISD=-5A, VGS=0V ISD= 100mA
(Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
-10V
ID-VGS Characteristics (Typical)
TC=-40°C 25°C
RDS(ON)-ID Characteristics (Typical)
(VDS=-10V)
(VGS=-10V)
125°C
(ON)
VGS=-4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=-10V)
ID=-5A VGS=-10V
VGS=0V f=1MHz
(yfs)
(ON)
Capacitance (pF)
Ciss
Coss
TC=-40°C 25°C
Crss
125°C
-0.05 -0.1
-0.5
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
With Silicone Grease Natural Cooling Circuits Operating
-0.5
Without Heatsink
-0.1 -0.5
-100
(°C)
SLA5006
Absolute maximum ratings
Symbol VDSS VGSS Ratings -100 10(PW1ms)
P-channel With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification -100 -250 -2.0 -4.0 0.55 -4.5 -5.5 Unit
(Ta=25°C)
Unit
Condition ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -50V, VGS=-10V, Fig. page ISD=-5A, VGS=0V ISD= 100mA
ID(pulse) 5(PW0.5ms, Du25%) IFSM 10(PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
-10V
TC=-
40°C
(ON)
Re(yfs)-ID Characteristics (Typical)
(VDS=-10V)
(yfs)
(ON)
Capacitance (pF)
TC=-40°C 25°C
125°C
-0.05 -0.1
-0.5
IDR-VSD Characteristics (Typical)
qDiode flyback voltage absorption
Symbol Specification Unit Condition IR=10µA IF=1A VR=120V 100mA
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=-10V)
(VGS=-10V)
VGS=-4V
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
ID=-5A VGS=-10V
VGS=0V f=1MHz
Ciss
Coss
Crss
(°C)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
With Silicone Grease Natural Cooling Circuits Operating
-0.5
Without Heatsink
-0.1 -0.5
-100
(°C)
SLA5007
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms)
N-channel P-channel H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratigs channel (PW1ms)
Unit °C/W °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=1mH, ID=2A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
(VDS=10V)
TC=-40°C 25°C
VGS=4V
125°C
VGS=-4V
RDS(ON)-ID Characteristics (Typical)
N-ch
0.20
(VGS=10V)
P-ch
(VGS=-10V)
P-ch
TC=-40°C
(VDS=-10V)
0.15
25°C
125°C
(ON)
0.10
(ON)
0.05
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=5A VGS=10V
P-ch
ID=-4A VGS=-10V
(ON)
(ON)
(°C)
(°C)
SLA5007
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V,VGS=10V Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V,VGS=10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(VDS=10V)
N-ch
(pulse)
(TC=25°C)
(yfs)
(yfs)
25°C
0.08 -0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
1000
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Ciss
Capacitance (pF)
Capacitance (pF)
Coss
Coss
Crss
-0.5
Crss
-0.1 -0.5
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5008
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms)
N-channel P-channel H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratings channel -100 (PW1ms)
Unit °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) 3.57 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=1mH, ID=5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
(VDS=10V)
TC=- 40°C
25°C
VGS=5V
VGS=-5V
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=-10V)
P-ch
(VDS=-10V)
TC=- 40°C
(ON)
(ON)
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=4A VGS=10V
P-ch
ID=-3A VGS=-10V
(ON)
(ON)
(°C)
(°C)
SLA5008
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.50 0.60 ±500 Specifications Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 50V, VGS=-10V, Fig. page ISD=4A ISD=±100mA -2.0 -4.0 -5.5 Specifications -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-25V, f=1.0MHz, VGS=0V ID=-3A, -50V, VGS=-10V, Fig. page ISD=-3A ISD= 100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(VDS=10V)
N-ch
(pulse)
(TC=25°C)
(yfs)
25°C
0.05
-0.05
-0.1
-0.5
(yfs)
Capacitance-VDS Characteristics (Typical)
N-ch
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Ciss
Capacitance (pF)
Capacitance (pF)
Coss
-0.5
Crss
Crss
-0.1 -0.5
Coss
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5009
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms)
N-channel P-channel 3-phase motor drive
External dimensions
(Ta=25°C)
(12-pin)
Ratings channel (PW1ms)
Unit °C/W °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=1mH, ID=2A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
(VDS=10V)
TC=-40°C
25°C
VGS=V
125°C
VGS=-4V
RDS(ON)-ID Characteristics (Typical)
N-ch
0.20
(VGS=10V)
P-ch
(VGS=-10V)
P-ch
TC=-40°C 25°C
(VDS=-10V)
0.15
125°C
(ON)
0.10
(ON)
0.05
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=5A VGS=10V
P-ch
ID=-4A VGS=-10V
(ON)
(ON)
(°C)
(°C)
SLA5009
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=-10V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(pulse)
(VDS=10V)
N-ch
(TC=25°C)
(yfs)
(yfs)
25°C
0.08
-0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
1000
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Capacitance (pF)
Capacitance (pF)
Ciss
Coss
Crss
-0.5
Crss
-0.1 -0.5
Coss
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5010
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms)
N-channel P-channel 3-phase motor drive
External dimensions
(12-pin)
(Ta=25°C)
Ratings channel -100 (PW1ms)
Unit °C/W °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink)
VISO Tstg
(Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating 1000 (Between lead pin, +150
VDD=20V, L=1mH, ID=5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
TC=-40°C
(VDS=10V)
25°C 125°C
VGS=5V
VGS=-5V
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=-10V)
P-ch
TC=-40°C 25°C
(VDS=-10V)
125°C
(ON)
(ON)
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=4A VGS=10V
P-ch
ID=-3A VGS=-10V
(ON)
(ON)
(°C)
(°C)
SLA5010
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.50 0.60 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 50V, VGS=10V, Fig. page ISD=4A, VGS=0V ISD=±100mA -2.0 -4.0 -5.5 Specification -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-3A VGS=-10V, ID=-3A VDS=-25V, f=1.0MHz, VGS=0V ID=-3A, -50V, VGS=-10V, Fig. page ISD=-3A ISD= 100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(VDS=10V)
N-ch
(pulse)
(TC=25°C)
(yfs)
(yfs)
TC=-40°C
25°C 125°C
0.05
-0.05
-0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss Ciss
Capacitance (pF)
Capacitance (pF)
-0.5
Crss
Crss
-0.1 -0.5
Coss
Coss
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5011
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings ±10(PW1ms) (Ta=25°C, with circuits operating, without heatsink)
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.22 Specification ±500 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Conditions ID=250µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=10V, Fig. page ISD=5A ISD=±100mA
(Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=1mH, ID=1.5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
0.20
(VDS=10V)
(VGS=10V)
0.15
(ON)
TC=-40°C 25°C
125°C
0.10
0.05
VGS=4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
Ciss
Capacitance (pF)
(yfs)
Coss
(ON)
25°C
Crss
0.08
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5012
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink)
P-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.22 -4.5 -5.5 0.30 Specification -250 -4.0 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, -30V, VGS=-10V, Fig. page ISD=-5A ISD= 100mA
(Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
-10V
ID-VGS Characteristics (Typical)
TC=-40°C 25°C
RDS(ON)-ID Characteristics (Typical)
0.25
(VDS=-10V)
(VGS=-10V)
125°C
0.20
(ON)
0.15
0.10
0.05
VGS=-4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
2000
(VDS=-10V)
ID=-5A VGS=-10V
VGS=0V f=1MHz
1000
Capacitance (pF)
Ciss
(yfs)
Coss
(ON)
25°C
-0.1
Crss
-0.5
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
-0.5
Without Heatsink
-0.1 -0.5
-100
(°C)
SLA5013
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* channel (PW1ms)
N-channel P-channel H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratings channel -100 (PW1ms)
Unit °C/W °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
VDD=20V, L=10mH, ID=2.5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
-10V
ID-VGS Characteristics (Typical)
P-ch N-ch
(VDS=10V)
TC=-40°C 25°C 125°C
VGS=4V
VGS=-4V
RDS(ON)-ID Characteristics (Typical)
N-ch
(VGS=10V)
P-ch
(VGS=-10V)
P-ch
(VDS=-10V)
(ON)
(ON)
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=5A VGS=10V
P-ch
ID=-5A VGS=-10V
(ON)
(ON)
(°C)
(°C)
SLA5013
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.27 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V, VGS=10V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.55 -4.5 -5.5 Specification -100 -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-100V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V
ID=-5A, -50V, VGS=-10V, (Ta=25°C)
Fig. page ISD=-5A, VGS=0V ISD= 100mA
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(VDS=10V)
N-ch
(pulse)
(TC=25°C)
(yfs)
(yfs)
25°C
25°C
0.05
-0.05 -0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
1000
VGS=0V f=1MHz
P-ch
1000
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Capacitance (pF)
Capacitance (pF)
Ciss
Coss
Coss
-0.5
Crss
Crss
-0.1 -0.5
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
(°C)
SLA5015
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink)
P-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff -2.0 0.38 -4.5 -5.5 0.55 Specification -250 -4.0 Unit
Unit °C/W °C/W Vrms
Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A ISD= 100mA
(Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits op1erating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
VISO Tstg
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
-10V
25°C
ID-VGS Characteristics (Typical)
40°C
RDS(ON)-ID Characteristics (Typical)
(VDS=-10V)
TC=-
(VGS=-10V)
(ON)
VGS=-4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
Ciss
(VDS=-10V)
ID=-4A VGS=-10V
VGS=0V f=1MHz
(yfs)
Capacitance (pF)
Coss
(ON)
Crss
-0.1
-0.5
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
-0.5
Without Heatsink
-0.1 -0.5
-100
(°C)
SLA5017
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS*
N-channel P-channel 3-phase motor drive
External dimensions
(Ta=25°C)
(12-pin)
Ratings channel channel (PW1ms) (PW1ms) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
Unit °C/W °C/W Vrms
VISO Tstg
VDD=20V, L=1mH, ID=2A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
(VDS=10V)
3.5V
TC=-40°C 25°C
VGS=3V
125°C
VGS=-4V
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=-10V)
P-ch
TC=-40°C
(VDS=-10V)
25°C 125°C
(ON)
(ON)
VGS=10V
RDS(ON)-TC Characteristics (Typical)
N-ch
(ID=2.5A)
P-ch
ID=-4A VGS=-10V
VGS=10V
(ON)
(ON)
(°C)
(°C)
SLA5017
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.25 0.22 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V
ID=-4A, -30V, VGS=-10V,
(Ta=25°C)
Fig. page ISD=-4A, VGS=0V ISD= 100mA
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(pulse)
(VDS=10V)
N-ch
(TC=25°C)
(yfs)
(yfs)
25°C
0.05
-0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
1000
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Ciss
Capacitance (pF)
Capacitance (pF)
Coss
Crss
-0.5
Crss
-0.1 -0.5
Coss
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
-10V
VGS=0V
VGS=0V
Without Heatsink
(°C)
SLA5018
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS*
N-channel P-channel H-bridge
External dimensions
(Ta=25°C)
(12-pin)
Ratings channel channel (PW1ms) (PW1ms) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
Unit °C/W °C/W Vrms
VISO Tstg
VDD=20V, L=1mH, ID=2A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
ID-VGS Characteristics (Typical)
P-ch N-ch
-10V
(VDS=10V)
3.5V
TC=-40°C 25°C
VGS=3V
VGS=-4V
125°C
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=-10V)
P-ch
TC=-40°C
(VDS=-10V)
25°C
125°C
(ON)
(ON)
VGS=10V
RDS(ON)-TC Characteristics (Typical)
N-ch
(ID=2.5A)
P-ch
ID=-2A VGS=-10V
(ON)
(ON)
VGS=10V
(°C)
(°C)
SLA5018
Electrical characteristics
channel Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff 0.17 0.25 0.22 0.30 ±500 Specification Unit Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA -2.0 0.38 -4.4 -5.5 0.55 Specification -250 -4.0 channel Unit Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-2A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A, VGS=0V ISD= 100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=-10V)
(VDS=10V)
N-ch
(pulse)
(TC=25°C)
(yfs)
(yfs)
25°C
0.05
-0.1
-0.5
Capacitance-VDS Characteristics (Typical)
N-ch
1000
VGS=0V f=1MHz
P-ch
VGS=0V f=1MHz
P-ch
(pulse)
(TC=25°C)
Ciss
Ciss
Capacitance (pF)
Capacitance (pF)
Coss
Crss
-0.5
Crss
-0.1 -0.5
Coss
-100
IDR-VSD Characteristics (Typical)
N-ch
PT-Ta Characteristics
P-ch
With Silicone Grease Natural Cooling Circuits Operating
-10V
VGS=0V
VGS=0V
Without Heatsink
(°C)
SLA5021
Absolute maximum ratings
Symbol VDSS VGSS Ratings (PW1ms)
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.18 0.19 0.19 0.25 Unit
(Ta=25°C)
Unit
Conditins ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 50V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA
ID(pulse) EAS* (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150
VDD=20V, L=10mH, ID=3A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
4.0V
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
0.25
(VDS=10V)
3.5V
0.20
VGS=4V
0.15
VGS=10V
3.0V
(ON)
TC=-40°C 25°C
0.10
VGS=2.5V
125°C
0.05
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
3000
(ID=2.5A)
VGS=0V f=1MHz
1000
Ciss
Capacitance (pF)
(yfs)
Coss
(ON)
VGS=4V
VGS=10V
TC=-40°C 25°C
Crss
125°C
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
VGS=0V
(°C)
SLA5022
Absolute maximum ratings
Symbol VGSS Ratings (PW100ms) (PW1ms) -0.5 (Ta=25°C) (Tc=25°C) 3.57 1000 (Between lead pin, +150
Darlington N-channel MOSFET 3-phase motor drive
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics (Sink channel MOSFET)
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.17 0.22 0.25 0.30 Unit
(Ta=25°C)
Unit °C/W °C/W Vrms
Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=±100mA
VISO Tstg
sEquivalent circuit diagram
OUT1
OUT2
OUT3
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical)
VGS-ID Temperature Characteristics (Typical)
IDS-RDS(ON) Characteristics (Typical)
(VDS=10V)
3.5V
(ON)
TC=-40°C 25°C
VGS=10V
VGS=3V
125°C
ID-Re(yfs) Temperature Characteristics (Typical)
VDS=10V
TC-RDS(ON) Characteristics (Typical)
(ID=2.5A)
VDS-Cpacitance Characteristics (Typical)
1000
Ciss
VGS=0V f=1MHz
Capacitance (pF)
(yfs)
Coss
(ON)
VGS=10V
25°C
Crss
0.05
(°C)
VSD-IDR Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
VGS=0V
SLA5022
Electrical characteristics (Source: transistor)
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC tstg 2000 5000 12000 -1.5 -2.0 Specification Unit
(Ta=25°C)
Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-4A IC=-4A, IB=-10mA IFEC=4A IF=±0.5A -25V, IC=-4A, IB1=-IB2=-10mA VCE=-12V, IE=1A VCB=-10V, f=1MHz
Characteristic curves (PNP)
IC-VCE Characteristics (Typical)
IB=-10mA
hFE-IC Characteristics (Typical)
20000
hFE-IC Temperature Characteristics (Typical)
20000 10000
(VCE=-4V)
(VCE=-4V)
-3mA
-2mA
10000
5000
5000
-1mA
-0.5mA
1000
1000
-0.1
-0.5
-0.1
-0.5
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=-4V)
(sat)
(sat)
IC=-8A
Ta=-30°C
75°C
125°C
IC=-2A
-0.1
-0.5
-0.3 -0.5
-100 -200
25°C
25°C
IC=-4A
(mA)
j-a-PW Characteristics
Safe Operating Area (SOA)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
ch-c
-0.5
Single Pulse Without Heatsink Ta=25°C
Without Heatsink
1000
-0.1
-100
(mS)
(°C)
SLA5023
Absolute maximum ratings
Symbol VGSS Ratings (PW100ms) (PW1ms) -0.5 (Ta=25°C) (Tc=25°C) 3.57 1000 (Between lead pin, +150
Darlington N-channel MOSFET 3-phase motor drive
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Electrical characteristics (Sink: N-channel MOSFET)
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.47 0.55 0.60 0.78 Unit
Unit °C/W °C/W Vrms
Conditions ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=2A VGS=4V, ID=2A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V ISD=4A, VGS=0V IF=±100mA
VISO Tstg
sEquivalent circuit diagram
OUT1
OUT2
OUT3
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical)
VGS-ID Temperature Characteristics (Typical)
VDS=10V
IDS-RDS(ON) Characteristics (Typical)
4.5V
40°C
TC=-
VGS=4V
3.5V
VGS=3V
25°C
(ON)
VGS=10V
ID-Re(yfs) Temperature Characteristics (Typical)
VDS=10V
TC-RDS(ON) Characteristics (Typical)
(ID=2A)
VDS-Cpacitance Characteristics (Typical)
VGS=0V f=1MHz
Ciss
(yfs)
(ON)
Capacitance (pF)
Coss
25°C
Crss
0.05
(°C)
VSD-IDR Characteristics (Typical)
Safe Operating Area (SOA)
(Tc=25°C)
(pulse)
ch-c-PW Characteristics
ch-c
1000
500010000
(mS)
SLA5023
Electrical characteristics (Source: transistor)
Symbol ICBO IEBO VCEO VCE(sat) VBE(sat) VFEC tstg -100 2000 5000 12000 -1.5 -2.2 Specification Unit
(Ta=25°C)
Conditions VCB=-100V VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-6mA IFEC=-1A IF=±100mA -30V IC=-3A IB1=-IB2=-6mA VCE=-12V, IE=1A VCB=-10V, f=1MHz
Characteristic curves (PNP)
IC-VCE Characteristics (Typical)
IB=-4mA
hFE-IC Characteristics (Typical)
20000 10000
hFE-IC Temperature Characteristics (Typical)
20000 10000 5000
75°C
(VCE=-4V)
(VCE=-4V)
-1.2mA
5000
-0.8mA
-0.6mA
-0.1 -0.5
1000
1000
-0.4mA
-0.03 -0.05
-0.03
-0.05 -0.1
-0.5
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
IB=1000)
(VCE=-4V)
(sat)
(sat)
IC=-5A IC=-3A
Ta=-30°C
75°C
125°C
25°C
IC=-1A
-0.3
-0.5
-0.2
-0.5
-100
-500
75°C 25°C -30°C
(mA)
j-a-PW Characteristics
Safe Operating Area (SOA)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
ch-c
-0.5
-0.1
Single Pulse -0.05 Without Heatsink Ta=25°C
Without Heatsink
1000
-0.03
-100
(mS)
(°C)
SLA5024
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) Ratings (PW1ms) (Ta=25°C, with circuits operating, without heatsink)
P-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Unit °C/W °C/W Vrms
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff
Specification -250 -2.0 0.38 -4.4 -5.5 0.55 -4.0
Unit
Conditions ID=-250µA, VGS=0V VGS= VDS=-60V, VGS=0V VDS=-10V, ID=-250µA VDS=-10V, ID=-4A VGS=-10V, ID=-4A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, -30V, VGS=-10V, Fig. page ISD=-4A ISD= 100mA
(Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between finand lead pin, +150
VISO Tstg
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
-10V
25°C
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=-10V)
TC=- 40°C
(VGS=-10V)
(ON)
VGS=-4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
(VDS=-10V)
ID=-4A VGS=-10V
VGS=0V f=1MHz
Ciss
Capacitance (pF)
(yfs)
(ON)
Coss
Crss
-0.1
-0.5
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
(TC=25°C)
Without Heatsink
-0.5
-0.1 -0.5
-100
(°C)
SLA5029
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings (PW1ms)
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Unit
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff
VISO Tstg
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
Specification ±100 0.33 0.45
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, 30V, VGS=10V, Fig. page ISD=4A ISD=±100mA
VDD=20V, L=1mH, ID=1.2A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
PT-Ta Characteristics
SLA5031
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms)
N-channel With built-in flywheel diode
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.17 0.22 0.25 0.30 Unit
(Ta=25°C)
Unit
Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, 30V, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA
VISO Tstg
(PW0.5ms, Du25%) (PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
qDiode flyback voltage absorption
Symbol Speciication Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA
VDD=20V, L=1mH, ID=1.7A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
3.5V
(ON)
TC=-40°C
VGS=3V
VGS=10V
25°C
125°C
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
1000
(VDS=10V)
(ID=2.5A)
VGS=0V f=1MHz
Ciss
(yfs)
(ON)
Capacitance (pF)
Coss
25°C
VGS=10V
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
VGS=0V
Without Heatsink
(°C)
SLA5037
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings (PW1ms)
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specifications ±100 1630 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 50V, RL=10, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA
VISO Tstg
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=3mH, ID=10A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
2.8V
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
VGS=4V VGS=10V
2.6V
TC=-40°C 25°C
(ON)
2.4V
2.2V VGS=2V
125°C
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
TC=-40°C
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
5000
(ID=5A)
VGS=0V f=1MHz
VGS=4V
25°C 125°C
Ciss
(yfs)
VGS=10V
Capacitance (pF)
1000
(ON)
Coss
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
VGS=0V
Without Heatsink
(°C)
SLA5040
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* IFSM Ratings (PW1ms)
N-channel With built-in flywheel diode
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss toff Specification ±500 0.50 0.60 Specification Unit
External dimensions
(12-pin)
(Ta=25°C)
(Ta=25°C)
Unit
Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V, Fig. page ISD=4A, VGS=0V ISD=±100mA
VISO Tstg
(PW0.5ms, Du25%) (PW10ms, Single pulse) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
qDiode flyback voltage absorption
Symbol Unit Conditions IR=10µA IF=1A VR=120V IF=±100mA
VDD=20V, L=1mH, ID=5A, unclamped, Fig. page
sEquivalent circuit diagram
Characteristic curves
SLA5041
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 100V, RL=20, VGS=10V, Fig. page ISD=10A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
5.5V
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
(VGS=10V)
4.5V
(ON)
125°C
-40°C
25°C
VGS=4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
3000
(VDS=10V)
ID=5A VGS=10V
VGS=0V f=1MHz
1000
Capacitance (pF)
Ciss
(yfs)
(ON)
Coss
TC=25°C
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
With Silicone Grease Natural Cooling Circuits Operating
VGS=0V
0.05
Without Heatsink
0.01
(°C)
SLA5042
Absolute maximum ratings
Symbol VDSS VGSS Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, 50V, RL=20, VGS=5V, Fig. page ISD=5A, VGS=0V ISD=±100mA
ID(pulse) (PW1ms, Du1%) EAS* (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W VISO 1000 (Between lead pin, Vrms Tstg +150
VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50,see Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
2.8V
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
VGS=4V
VGS=10V
2.6V
(ON)
2.4V
TC=-40°C 25°C
VGS=2.2V
125°C
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
2000
(ID=2.5A)
VGS=0V f=1MHz
TC=-40°C
1000
25°C
Capacitance (pF)
Ciss
(yfs)
125°C
VGS=4V
(ON)
VGS=10V
Coss
0.05
Crss
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
VGS= TC=25°C 1-Circuit Operation
Without Heatsink
(°C)
SLA5044
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 100V, RL=20, VGS=10V, Fig. page ISD=10A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50,see Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
(VDS=10V)
RDS(ON)-ID Characteristics (Typical)
(VGS=10V)
4.5V
(ON)
TC=-40°C TC=25°C TC=125°C
VGS=4V
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
ID=5A VGS=10V
Capacitance-VDS Characteristics (Typical)
3000
(VDS=10V)
VGS=0V f=1MHz
1000
Ciss
Capacitance (pF)
(yfs)
(ON)
Coss
TC=-40°C TC=25°C TC=125°C
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
(TC=25°C)
VGS=0V
0.05
Without Heatsink
0.01
(°C)
SLA5046
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss td(on) td(off) Specification ±100 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 100V, RL=28.6, VGS=10V, Fig. page ISD=7A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
RDS(ON)-ID Characteristics (Typical)
(VGS=10V)
(VDS=10V)
5.5V
(ON)
TC=-40°C 25°C 125°C
4.5V VGS=4V
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
RDS(ON)-TC Characteristics (Typical)
ID=3.5A VGS=10V
Capacitance-VDS Characteristics (Typical)
2000 1000
VGS=0V f=1MHZ
Capacitance (pF)
(yfs)
Ciss
(ON)
Coss
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
PT-Ta Characteristics
(TC=25°C)
(pulse)
With Silicone Grease Natural Cooling Circuits Operating
(ON)
LIMITED
VGS=
Without Heatsink
0.05
(°C)
SLA5047
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
(Ta=25°C)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 2000 Unit
Unit
Specification ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 70V, RL=14, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=4.7mH, ID=10A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
VGS=10V
ID-VGS Characteristics (Typical)
(VDS=10V)
RDS(ON)-ID Characteristics (Typical)
2.8V
VGS=4V
125°C 25°C
2.6V
(ON)
2.4V
TC=-40
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
RDS(ON)-TC Characteristics (Typical)
(ID=5A)
Capacitance-VDS Characteristics (Typical)
8000 5000
Ciss
VGS=0V f=1MHz
(yfs)
125°C
25°C
Capacitance (pF)
TC=-40°C
1000
Coss
0.05
(ON)
Crss
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
(ON) LIMITED
With Silicone Grease Natural Cooling Circuits Operating
Without Heatsink
0.05
0.01
(°C)
SLA5049
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 100V, RL=28.6, VGS=10V, Fig. page ISD=7A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
5.5V
ID-VGS Characteristics (Typical)
(VDS=10V)
RDS(ON)-ID Characteristics (Typical)
(VGS=10V)
TC=-40°C 25°C 125°C
4.5V
(ON)
VGS=4V
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
2000 1000
ID=3.5A VGS=10V
VGS=0V f=1MHz
Ciss
Capacitance (pF)
(yfs)
(ON)
Coss
0.05
Crss
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
(pulse)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
VGS=
(on) LIMITED
Without Heatsink
0.05
(°C)
SLA5052
Absolute maximum ratings
Symbol VDSS VGSS ID(pulse) EAS* Ratings
N-channel General purpose
(Ta=25°C)
External dimensions
(12-pin)
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss td(on) td(off) Specification ±100 13.5 1500 Unit
(Ta=25°C)
Unit
Conditions ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, 70V, RL=14, VGS=5V, Fig. page ISD=10A, VGS=0V ISD=±100mA
VISO Tstg
(PW1ms, Du1%) (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C,with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with circuits operating) °C/W 1000 (Between lead pin, Vrms +150
VDD=25V, L=2.7mH, ID=10A, unclamped, RG=50, Fig. page
sEquivalent circuit diagram
Characteristic curves
ID-VDS Characteristics (Typical)
VGS=10V 3.5V
ID-VGS Characteristics (Typical)
(VDS=10V)
RDS(ON)-ID Characteristics (Typical)
VGS=4V
2.8V
TC=-40°C 25°C
2.6V
125°C
(ON)
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
Capacitance-VDS Characteristics (Typical)
5000
(VDS=10V)
(ID=5A)
VGS=0V f=1MHz
Ciss
(yfs)
25°C
TC=-40°C
Capacitance (pF)
1000
(ON)
125°C
Coss
Crss
0.05
(°C)
IDR-VSD Characteristics (Typical)
Safe Operating Area (SOA)
(pulse)
PT-Ta Characteristics
(TC=25°C)
With Silicone Grease Natural Cooling Circuits Operating
(ON) LIMITED
VGS=0
0.05
Without Heatsink
0.01
(°C)
SLA5054
Absolute maximum ratings
N-channel General purpose
(Ta=25°C) Unit °C/W °C/W Vrms
FET-1
External dimensions sEquivalent circuit diagram
FET-1 FET-2 FET-2
(15-pin)
Ratings Symbol FET1 FET2 FET3 VDSS VGSS +20, ID(pulse)*1 EAS*2 (Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink) (Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) VISO 1000 (Between lead pin, Tstg +150 PW100µs, duty50% VDD=25V, L=1.0mH, IL=5A unclamped, RG=50, Fig. page
FET-3
FET-3
Electrical characteristics
FET1 Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss td(on) td(off) FET2 FET3
(Ta=25°C)
Specification Specification Specification Unit Conditions Unit Conditions Unit Conditions ID=100µA, VGS=0V ID=100µA, VGS=0V ID=100µA, VGS=0V VGS=20V VGS=20V VGS=20V VDS=150V, VGS=0V VDS=150V, VGS=0V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=250µA VDS=10V, ID=250µA VDS=10V, ID=3.5A VDS=10V, ID=2.5A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=10V, ID=2.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VGS=4V, ID=2.5A VGS=4V, ID=3.5A 1900 VDS=10V, VDS=10V, VDS=10V, f=1.0MHz, f=1.0MHz, f=1.0MHz, VGS=0V VGS=0V VGS=0V ID=3.5A, ID=2.5A, ID=3.5A, 70V, 70V, 70V, RL=20, RL=28, RL=20, VGS=5V, Fig.3 page VGS=5V, Fig.3 page VGS=5V, Fig.3 page ISD=7A, VGS=0V ISD=5A, VGS=0V ISD=7A, VGS=0V IF=±100mA IF=±100mA IF=±100mA
Characteristic curves
ID-VDS Characteristics (Typical)
3.0V 2.6V
FET1
FET2
FET3
2.4V
2.8V
2.8V
2.6V
2.6V
2.2V
2.4V
VGS=2.0V
2.4V VGS=2.2V
VGS=2.2V
ID-VGS Characteristics (Typical)
FET1
FET2
(VDS=10V)
FET3
(VDS=10V)
-40°C
-40°C
TC=1 25°C 25°C
-40°
RDS(ON)-ID Characteristics (Typical)
FET1
FET2
FET3
VGS=10V
(ON)
VGS=10V
VGS=10V
(ON)
(ON)
SLA5054
Re(yfs)-ID Characteristics (Typical)
FET1
(VDS=10V)
FET2
(VDS=10V)
FET3
(VDS=10V)
(yfs)
(yfs)
25°C
(yfs)
25°C
0.05
0.05
0.05
RDS(ON)-TC Characteristics (Typical)
FET1
(ID=3.5A)
FET2
(ID=2.5A)
FET3
(ID=3.5A)
(ON)
(ON)
(ON)
(°C)
(°C)
(°C)
VGS=0V f=1MHz
Capacitance-VDS Characteristics (Typical)
10000
FET1
VGS=0V f=1MHz
FET2
1000
FET3
5000
VGS=0V f=1MHz
Ciss
Capacitance (pF)
Capacitance (pF)
Capacitance (pF)
Ciss
1000
Ciss
1000
Coss
Coss Crss
Crss
Coss Crss
IDR-VSD Characteristics (Typical)
FET1
FET2
FET3
VGS=0V
VGS=0V
VGS=0V
Safe Operating Area (SOA)
FET1
(TC=25°C)
FET2
FET3
(TC=25°C)
(TC=25°C)
(pulse)
(pulse)
(pulse)
(on) LIMITED
(on) LIMITED
0.05
1-Circuit Operation
0.05
1-Circuit Operation
0.05
1-Circuit Operation
0.01
0.01
0.01
PT-Ta Characteristics
Without Heatsink
With Silicone Grease Natural Cooling Circuits Operating
(°C)
SLA5055
Absolute maximum ratings
Symbol VDSS VGSS (pulse)*
N-channel General purpose
External dimensions
(Ta=25°C)
(12-pin)
Ratings +20,
Unit °C/W °C/W Vrms
(Ta=25°C, with circuits operating, without heatsink) (Tc=25°C, with circuits operating, with infinite heatsink)
VISO Tstg
PW100µs, duty50%
(Junction-Air, Ta=25°C, with circuits operating) 3.57 (Junction-Case, Tc=25°C, with circuits operating) 1000 (Between lead pin, +150
sEquivalent circuit diagram
FET-1 FET-2 FET-2 FET-2 FET-2
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
(VDS=10V)
2.8V
2.8V
2.6V
2.6V
2.4V
2.4V
VGS=2.2V
VGS=2.2V
RDS(ON)-ID Characteristics (Typical)
VGS=10V
-40°C
(VDS=10V)
VGS=10V
(ON)
(ON)
-40°C
RDS(ON)-TC Characteristics (Typical)
(ID=2.5A)
(ID=3.5A)
(ON)
(ON)
(°C)
(°C)
SLA5055
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS Re(yfs) RDS(ON) Ciss Coss Crss (on) (off) Specification Unit Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, 70V, RL=28, VGS=5V, Fig.3 page ISD=5A, VGS=0V IF=±100mA Specification Unit Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, 70V, RL=20, VGS=5V, Fig.3 page ISD=7A, VGS=0V IF=±100mA
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
Safe Operating Area (SOA)
(VDS=10V)
(VDS=10V)
(pulse)
(TC=25°C)
(yfs)
(yfs)
25°C
25°C
1-Circuit Operation
0.05 0.05
0.05
0.01
Capacitance-VDS Characteristics (Typical)
1000
VGS=0V f=1MHz
5000
VGS=0V f=1MHz
(TC=25°C)
Ciss
(pulse)
Capacitance (pF)
Capacitance (pF)
(on) LIMITED
1000
Ciss
Coss
1-Circuit Operation
Crss
Coss Crss
0.05
0.01
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
With Silicone Grease Natural Cooling Circuits Operating
VGS=0V
VGS=0V
Without H

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