Semiconductor Corp. DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 type

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Semiconductor Corp. DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 type

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BAS28 DUAL, ISOLATED HIGH SPEED SWITCHING DIODE
Semiconductor Corp.
DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 type ultra-high speed silicon switching diode manufactured epitaxial planar process, epoxy molded surface mount package with isolated dual diodes, designed high speed switching applications. Marking code A61. SOT-143 CASE MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 msec. Forward Surge Current, tp=1 sec. Power Dissipation Operating Storage Junction Temperature Thermal Resistance SYMBOL VRRM IFRM IFSM IFSM IFSM TJ,Tstg 4000 2000 1000 +150 UNITS
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL TEST CONDITIONS VR=25V, TA=150 VR=75V VR=75V, TA=150oC IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, IF=IR=10mA, RL=100, Rec. 1.0mA IF=10mA, VR=5.0V, RL=500 IF=10mA, tr=20ns 0.715 0.855 1.000 1.250 1.75 UNITS
dimensions inches (mm).
LEAD CODE: CATHODE CATHODE ANODE ANODE

Semiconductor Corp. DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 type

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