Read Access Time Word-wide Byte-wide Configurable 8-Megabit Flash Mask

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Read Access Time Word-wide Byte-wide Configurable 8-Megabit Flash Mask

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AT27C800
Read Access Time Word-wide Byte-wide Configurable 8-Megabit Flash Mask Compatable Power CMOS Operation Maximum Standby Maximum Active Wide Selection JEDEC Standard Packages 42-Lead Cerdip PDIP 44-Lead SOIC (SOP) 48-Lead TSOP Power Supply High Reliability CMOS Technology 2,000 Protection Latchup Immunity RapidProgramming Algorithm µs/word (typical) CMOS Compatible Inputs Outputs Integrated Product Identification Code Commercial Industrial Temperature Ranges
Description
AT27C800 low-power, high performance 8,388,608-bit erasable programmable read only memory (EPROM) organized either 512K 1024K bits. requires single power supply normal read mode operation. word accessed less than eliminating need speed-reducing WAIT states. organization makes this part ideal high-performance 32-bit (continued) microprocessor systems.
8-Megabit (512K 1024K Erasable EPROM AT27C800 Preliminary
Configurations
Name O15/A-1 BYTE/VPP Function Addresses Outputs Output/Address Byte Mode/ Program Supply Chip Enable Output Enable Connect
CDIP, PDIP View
BYTE/VPP O15/A-1
SOIC (SOP)
BYTE/VPP O15/A-1
TSOP Type
BYTE/VPP O15/A-1
0801A-A
AT27C800 organized either word-wide byte-wide. organization selected BYTE/VPP pin. When BYTE/VPP asserted high (VIH), word-wide organization selected O15/A-1 used data output. When BYTE/VPP asserted (VIL),the byte wide organization selected O15/A-1 used address A-1. When AT27C800 logically regarded (word-wide), read bytewide mode, then with A-1=VIL lower eight bits word selected with =VIH upper bits 16-bit word selected. read mode, AT27C800 typically consumes Standby mode supply current typically less than AT27C800 available industry standard JEDECapproved one-time programmable (OTP)PDIP, SOIC (SOP), TSOP well erasable windowed Cerdip packages. device features two-line control(CE,OE) eliminate contention high-speed systems. With high density 512K word 1024K-bit storage capability, AT27C800 allows firmware stored reliably accessed system without delays mass storage media. Atmel's AT27C800 additional features that ensure high quality efficient production use. RapidProgramming Algorithm reduces time required program part guarantees reliable programming. Programming time typically only 50µs/word. Integrated Product Identification Code electronically identifies device manufacturer. This feature used industry standard programming equipment select proper programming equipment voltages.
Erasure Characteristics
entire memory array AT27C800 erased (all outputs read VOH) after exposure ultraviolet light wavelength Complete erasure assured after minimum minutes exposure using 12,000 µW/cm2 intensity lamps spaced inch away from chip. Minimum erase time lamps other intensity ratings calculated from minimum integrated erasure dose W.sec/cm2. prevent unintentional erasure, opaque label recommended cover clear window erasable EPROM that will subjected continuous flourescent indoor lighting sunlight.
System Considerations
Switching between active standby conditions Chip Enable produce transient voltage excursions. Unless accommodated system design, these transients exceed data sheet limits, resulting device non-conformance. minimum, high frequency, inherent inductance, ceramic capacitor should utilized each device. This capacitor should connected between Ground terminals device, close device possible. Additionally, stabilize supply voltage level printed circuit boards with large EPROM arrays, bulk electrolytic capacitor should utilized, again connected between Ground terminals. This capacitor should positioned close possible point where power supply connected array.
Block Diagram
AT27C800
AT27C800
Absolute Maximum Ratings*
Temperature Under Bias .-55°C +125°C Storage Temperature .-65°C +150°C Voltage with with Respect Ground.-2.0V +7.0V(1) Voltage with Respect Ground .-2.0V +14.0V(1) Supply Voltage with Respect Ground .-2.0V +14.0V(1) Integrated Erase Dose. 7258
Note: *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions beyond those indicated operational sections this specification implied. Exposure absolute maximum rating conditions extended periods affect device reliability. Minimum voltage -0.6V which undershoot -2.0V pulses less than Maximum output voltage 0.75V which overshoot 7.0V pulses less than
Operating Modes
Outputs Mode\Pin Read Word-wide Read Byte-wide Upper Read Byte-wide Lower Output Disable Standby Rapid Program(2) Verify Inhibit Product Identification
X(1)
BYTE/VPP
O0-O7 DOUT DOUT DOUT
O8-O14 DOUT High High High High DOUT High
O15/A-1 DOUT
X(1)
X(1)
X(1)
Identification Code
Notes:
VIH. Refer programming characteristics tables this data sheet. 12.0 0.5V. identifier words selected. inputs held (VIL) except A9,which which toggled (VIL) select Manufacturer's Identification word high (VIH) select Device Code word. Standby current (ISB) specified with will cause slight increase
Operating Conditions Read Operation
AT27C800 Operating Temperature (Case) Power Supply Com. Ind. 70°C -40°C 85°C 70°C -40°C 85°C 70°C -40°C 85°C
Operating Characteristics Read Operation
Symbol IPP1(2) Parameter Input Load Current Output Leakage Current
Condition VOUT VPP= ISB1 (CMOS) 0.3V ISB2 (TTL) 0.5V 5MHz, IOUT
±1.0 ±5.0
Units
Read/Standby Current
VCC(1) Standby Current Active Current
Notes:
Input Voltage Input High Voltage Output Voltage Output High Voltage IOL= -400
-0.6
must applied simultaneously before VPP, removed simultaneously after VPP. connected directly except during programming. supply current would then IPP.
Characteristics Read Operation
AT27C800 Symbol tACC
Units
Parameter Address Output Delay Output Delay Output Delay High Output Float, whichever occured first Output Hold from Address whichever occured first BYTE High Output Valid BYTE Output Transition
Condition
tCE(2)
(2,3)
tDF(4,5) tOH(4) tSTD
Notes:
2,3,4,5. Waveforms Read Operation diagram.
AT27C800
AT27C800
Byte-Wide Read Mode Waveforms(1)
Note:
BYTE/VPP
Byte-Wide Read Mode Waveforms(1)
Note:
BYTE/VPP
BYTE Transition Waveforms
VALID VALID
BYTE/VPP
tACC
DATA
DATA
HI-Z
DATA
tSTD
Notes: Timing measurement references 0.8V 2.0V. Input drive levels 0.45V 2.4V, unless otherwise specified. delayed after falling edge without impact tCE. delayed tACC after address valid without impact tACC. This parameter only sampled 100% tested. Output float defined point when data longer driven.
Input Test Waveforms Measurement Levels
Output Test Load
(10% 90%)
Note:
including capacitance.
Capaticance MHz, 25°V)(1)
COUT
Note:
Units
Conditions VOUT
Typical values nominal supply voltage. This parameter only sampled 100% tested.
AT27C800
AT27C800
Programming Waveforms(1)
Notes:
Input Timing reference 0.8V 2.0V VIH. tDFP characteristics device must accommodated programmer. When programming AT27C800, capacitor required across ground suppress voltage transients.
Programming Characteristics
5°C, 0.25V, 13.0 0.25V Limits Symbol ICC2 IPP2 Parameter Input Load Current Input Level Input High Level Output Voltage Output High Voltage Supply Current (Program Verify) Supply Current Product Identification Voltage 11.5 -400 12.5 Test Conditions VIL, -0.6 Units
Programming Characteristics
5°C, 0.25V, 13.0 0.25V Limits Symbol tOES tDFP tVPS tVCS tPRT
Notes:
Parameter Address Setup Time Setup Time Data Setup Time Address Hold Time Data Hold Time High Output Float Delay(2) Setup Time Setup Time Program Pulse Width Data Valid from BYTE /VPP Pulse Rise Time During Programming
Test Conditions(1) Input Rise Fall Times: (10% 90%) Input Pulse Levels: 2.4V Input Pulse Levels: 0.8V 2.0V Input Timing Reference Level: 0.8V 2.0V Output Timing Reference Level: 0.8V 2.0V
47.5
Units
52.5
must applied simultaneously before removed simultaneously after VPP. This parameter only sampled 100% tested. Output Float defined point where data longer driven- timing diagram. Program Pulse width tolerance
Atmel's 27C800 Integrated Product Identification Code
Pins Codes Manufacturer Device Type Data 1E1E F8F8
AT27C800
AT27C800
Rapid Programming Algorithm
pulse width used program. address first location. raised 6.5V BYTE/VPP raised 13.0V. Each address first programmed with pulse without verification. Then verification/ reprogramming loop executed each address. event word fails pass verification, successive pulses applied with verification after each pulse. word fails verify after pulses have been applied, part considered failed. After word verifies properly, next address selected until have been checked. then lowered 5.0V 5.0V. words read again compared with original data determine device passes fails.
Ordering Information
tACC (ns) (mA) Active Standby Ordering Code AT27C800-10DC AT27C800-10PC AT27C800-10RC AT27C800-10TC AT27C800-10DI AT27C800-10PI AT27C800-10RI AT27C800-10TI AT27C800-12DC AT27C800-12PC AT27C800-12RC AT27C800-12TC AT27C800-12DI AT27C800-12PI AT27C800-12RI AT27C800-12TI AT27C800-15DC AT27C800-15PC AT27C800-15RC AT27C800-15TC AT27C800-15DI AT27C800-15PI AT27C800-15RI AT27C800-15TI Package 42DW6 42P6 42DW6 42P6 42DW6 42P6 42DW6 42P6 42DW6 42P6 42DW6 42P6 Operation Range Commercial (0°C 70°C)
Industrial (-40°C 85°C)
Commercial (0°C 70°C)
Industrial (-40°C 85°C)
Commercial (0°C 70°C)
Industrial (-40°C 85°C)
Package Type 42DW6 42P6
Lead, 0.600" Wide, Ceramic Dual Inline Package (CDIP) Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) Lead, 0.525" Wide, Plastic Gull Wing Small Outline Package (SOIC/SOP) Lead, Plastic Thin Small Outline Package (TSOP)
AT27C800

Read Access Time Word-wide Byte-wide Configurable 8-Megabit Flash Mask

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