4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Inter

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4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Inter

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HS-302RH-T
4603.1
Radiation Hardened CMOS Dual DPST Analog Switch
Intersil's Satellite Applications Flow(SAF) devices fully tested guaranteed 100kRAD Total Dose. These Class devices processed standard flow intended meet cost shorter lead-time needs large volume satellite manufacturers, while maintaining high level reliability. HS-302RH-T analog switch monolithic device fabricated using Radiation Hardened CMOS technology Intersil dielectric isolation process latch-up free operation. Improved total dose hardness obtained layout (thin oxide tabs extending channel stop) processing (hardened gate oxide). These switches offer lowresistance switching performance analog voltages supply rails. "ON" resistance stays reasonably constant over full range operating voltage current. "ON" resistance also stays reasonably constant when exposed radiation, being typically pre-rad post 100kRAD(Si). This device provide break-before-make switching.
Features
Class MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up, Dielectrically Isolated Device Islands Compatible with Intersil HI-302 Series Analog Switches Analog Signal Range Leakage 100nA (Max, Post Rad) (Max, Post Rad) Operating Power 100µA (Max, Post Rad)
Pinouts
HS1-302RH-T (SBDIP), CDIP2-T14 VIEW
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-302RH-T contained 5962-95812. "hot-link" provided from website downloading. Intersil's Quality Management Plan Plan), listing Class screening operations, also available website.
HS9-302RH-T (FLATPACK), CDFP3-F14 VIEW
Ordering Information
ORDERING NUMBER 5962R9581201TCC 5962R9581201TXC PART NUMBER HS1-302RH-T HS9-302RH-T TEMP. RANGE (oC)
Functional Diagram
NOTE: Minimum order quantity units through distribution, units direct. TRUTH TABLE LOGIC SWITCHES
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999 Satellite Applications Flow(SAF) trademark Intersil Corporation.
HS-302RH-T Characteristics
DIMENSIONS: (2130µm 1930µm 279µm ±25.4µm) 11mils ±1mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm2 TRANSISTOR COUNT: PROCESS: Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-302RH-T
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Inter

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