4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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HCS244T
4616.1
Radiation Hardened Octal Buffer/Line Driver, Three-State
Intersil`s Satellite Applications Flow(SAF) devices fully tested guaranteed 100kRAD total dose. These Class devices processed standard flow intended meet cost shorter lead-time needs large volume satellite manufacturers, while maintaining high level reliability. Intersil HCS244T Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with active-low output enables.
Features
Class MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up Free Under Conditions Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/Bit-Day (Typ) Micron Radiation Hardened CMOS Fanout (Over Temperature Range) Driver Outputs LSTTL Loads Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HCS244T contained 5962-95731. "hot-link" provided from website downloading. Intersil`s Quality Management Plan Plan), listing Class screening operations, also available website.
Pinouts
HCS244DTR (SBDIP), CDIP2-T20 VIEW
Ordering Information
ORDERING INFORMATION 5962R9573101TRC 5962R9573101TXC PART NUMBER HCS244DTR HCS244KTR TEMP. RANGE (oC)
NOTE: Minimum order quantity units through
distribution, units direct.
HCS244KTR (FLATPACK), CDFP4-F20 VIEW
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999 Satellite Applications Flow(SAF) trademark Intersil Corporation.
HCS244T Functional Diagram
TRUTH TABLE INPUTS 1OE, High Voltage Level Voltage Level Immaterial High Impedance OUTPUT
HCS244T Characteristics
DIMENSIONS: (2747µm 2693µm 533µm ±51.0µm) 21mils ±2mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased Silicon Sapphire BACKSIDE FINISH: Sapphire PASSIVATION: Type: Silox (SiO2) Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm2 TRANSISTOR COUNT: PROCESS: CMOS
Metallization Mask Layout
HCS244T
(20) (19)
(18)
(17)
(16) (15)
(14)
(10)
(11)
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(13)
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

4616.1 Radiation Hardened Octal Buffer/Line Driver, Three-State

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