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GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE Volts Power Watt
Top Searches for this datasheet3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE Volts Power Watts FEATURES profile package Built-in strain relief Glass passivated junction inductance Excellent clamping capability Typical less than above High temperature soldering DO-15 seconds terminals Plastic package Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: JEDEC DO-15, Molded plastic over passivated junction Terminals: Solder plated, solderable MIL-STD-750, method 2026 Polarity: Color band denotes positive (cathode) Standard Packaging: 52mm tape Weight: 0.015 ounce, 0.04 gram MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Ratings ambient temperature unless otherwise specified. Peak Pulse Power Dissipation (Note Derate above Peak forward Surge Current 8.3ms single half sine-wave superimposed rated load(JEDEC Method) (Note Operating Junction Storage Temperature Range NOTES: Mounted 5.0mm2(.013mm thick) land areas. Measured 8.3ms, single half sine-wave equivalent square wave, duty cycle pulses minute maximum. SYMBOL IFSM TJ,TSTG VALUE +150 UNITS Watts Amps 3EZ11 THRU 3EZ200 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2 IF=500 types Type Nominal Zener Test (Note Voltage current Maximum Zener Impedance (Note volts (Note Ohms Ohms Leakage Current Volts Maximum Zener Current Madc Surge Current (Note 1.82 1.66 1.54 1.43 1.33 1.25 1.18 1.11 1.05 0.91 0.83 0.74 0.71 0.67 0.61 0.56 0.51 0.45 0.42 0.39 0.36 0.32 0.29 0.27 0.24 0.22 0.18 0.16 0.15 0.14 0.13 0.12 0.12 0.11 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ17 3EZ18 3EZ19 3EZ20 3EZ22 3EZ24 3EZ27 3EZ28 3EZ30 3EZ33 3EZ36 3EZ39 3EZ43 3EZ47 3EZ51 3EZ56 3EZ62 3EZ68 3EZ75 3EZ82 3EZ91 3EZ100 3EZ110 3EZ120 3EZ130 3EZ140 3EZ150 3EZ160 3EZ170 3EZ180 3EZ190 3EZ200 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 5000 6000 6500 7000 7000 8000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 10.6 11.4 12.2 13.7 14.4 15.2 16.7 18.2 20.6 22.5 25.1 27.4 29.7 32.7 35.6 38.8 42.6 47.1 51.7 62.2 69.2 83.6 91.2 98.8 106.4 121.6 130.4 136.8 144.8 NOTES: TOLERANCES Suffix indicates tolerance other tolerance will considered special device. ZENER VOLTAGE (Vz) MEASUREMENT guarantees zener voltage when measured ms±10ms from diode body, ambient temperature 3.ZENER IMPEDANCE (Zz) DERIVATION zener impedance derived from cycle voltage, which results when current having falue equal zener current (IZT IZK) superimposed IZK. SURGE CURRENT (Ir) NON-REPETITIVE rating listed electrical characteristics table maximum peak, non-repetitive, reverse surge current square wave equivalent sine wave pulse 1/120 second duration superimposed test current, IZT, JEDEC standards, however, actual device capability described Figure RATING CHARACTERISTICS CURVES 3EZ11 THRU 3EZ200 Fig. 2-TYPICAL THERMAL RESPONSE Fig. 3-MAXIMUM SURGE POWER Fig. 4-TYPICAL REVERSE LEAKAGE APPLICATION NOTE: Since actual voltage available from given zener diode temperature dependent, necessary determine junction temperature under operating conditions order calculate value. following procedure recommended: Lead Temperature, should determined from: LAPD temperature lead also measured using thermocouple placed lead close possible point. thermal mass connected point normally large enough that will significantly respond heat surges generated diode result pulsed operation once steady-state conditions achieved. Using measured value junction temperature determined increase junction temperature above lead temperature found from Figure train power pulses from Figure power. LAPD lead-to-ambient thermal resistance power dissipation. value will vary depends device mounting method. generally 30-40 various chips points common printed circuit board wiring. worst-case design, using expected limits limits extremes estimated. Changes voltage, then found from: excursions possible. Data Figure should used compute surge capability. Surge limitations given Figure They lower than would expected considering only junction temperature, current crowding effects cause temperatures extremely high small spots resulting device degradation should limits Figure exceeded. zener voltage temperature coefficient, found from Figures Under high power-pulse operation, zener voltage will vary with time also affected significantly zener resistance. best regulation, keep current RATING CHARACTERISTICS CURVES 3EZ11 THRU 3EZ200 TEMPERATURE COEFFICIENT REAGES (90% Units Ranges Indicated) Fig. 5-UNITS VOLTS Fig. 6-UNITS VOLTS Fig. 7-VZ THRU VOLTS Fig. THRU VOLTS Fig. 9-VZ THRU VOLTS Fig. 10-TYPICAL THERMAL RESISTANCE Other recent searchesZTX650 - ZTX650 ZTX650 Datasheet XZFVG129C - XZFVG129C XZFVG129C Datasheet TPC6006-H - TPC6006-H TPC6006-H Datasheet S5277B - S5277B S5277B Datasheet S5277G - S5277G S5277G Datasheet S5277J - S5277J S5277J Datasheet S5277N - S5277N S5277N Datasheet RN1967 - RN1967 RN1967 Datasheet RN1969 - RN1969 RN1969 Datasheet RN1968 - RN1968 RN1968 Datasheet CS5307 - CS5307 CS5307 Datasheet B520C - B520C B520C Datasheet B560C - B560C B560C Datasheet AD8390 - AD8390 AD8390 Datasheet 2SC4272 - 2SC4272 2SC4272 Datasheet
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