2SK3377 ORDERING INFORMATION PART NUMBER 2SK3377 2SK3377-Z P
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FIELD EFFECT TRANSISTOR
2SK3377
ORDERING INFORMATION
PART NUMBER 2SK3377 2SK3377-Z PACKAGE TO-251 TO-252
DESCRIPTION
2SK3377 N-Channel Field Effect Transistor designed high current switching applications.
FEATURES
On-state Resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss Ciss TYP. Built-in Gate Protection Diode TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
Note2 Note2
+150
(TO-252)
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Notes Duty cycle Starting
THERMAL RESISTANCE
Channel Case Channel Ambient Rth(ch-C) Rth(ch-A) 4.17 °C/W °C/W
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Document D14328EJ1V0DS00 (1st edition) Date Published January 2000 CP(K) Printed Japan
mark shows major revised points.
1999,2000
2SK3377
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) VGS(on) di/dt A/µs MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14328EJ1V0DS00
2SK3377
PACKAGE DRAWINGS (Unit
TO-251 (MP-3) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
1.6±0.2
5.5±0.2
13.7 MIN.
MAX.
1.1±0.2
+0.2
0.5-0.1
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode
Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
1.1±0.2
MIN.
5.5±0.2 10.0 MAX.
MIN. TYP.
Data Sheet D14328EJ1V0DS00
2SK3377
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