2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
2SK3367
DESCRIPTION
2SK3367 N-Channel Field Effect Transistor designed DC/DC converter application notebook computers.
FEATURES
on-resistance RDS(on)1 MAX. (VGS RDS(on)2 12.0 MAX. (VGS RDS(on)3 14.0 MAX. (VGS Ciss Ciss 2800 TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3367 2SK3367-Z PACKAGE TO-251 TO-252
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) Tstg
±144
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Note Duty cycle
THERMAL RESISTANCE
Channel case Channel ambient Rth(ch-C) Rth(ch-A) 3.13 °C/W °C/W
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14257EJ1V0DS00 (1st edition) Date Published October 1999 CP(K) Printed Japan
1999
2SK3367
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs VGS(on) TEST CONDITIONS 2800 1130 0.95 MIN. TYP. MAX. 12.0 14.0 UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet D14257EJ1V0DS00
2SK3367
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA 1000
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
ID(DC)
ID(PULSE)
Drain Current
25°C Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
Drain Current
0.01
150°C 125°C 75°C 25°C -25°C -40°C
0.001 0.0001
Gate Source Voltage
Data Sheet D14257EJ1V0DS00
2SK3367
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) °C/W
Rth(ch-C) 3.13 °C/W
0.01 0.001 25°C Single Pulse 100m 1000
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Forward Transfer Admittance
1000 0.01 0.001 0.0001 0.0001 0.001 0.01 Pulsed 1000 -40°C -25°C 25°C 75°C 125°C 150°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
1000
Drain Current
Channel Temperature
Data Sheet D14257EJ1V0DS00
2SK3367
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000
Diode Forward Current
0.01 Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 10000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
Ciss
td(off)
1000
1000 Coss Crss
td(on)
0.01
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet D14257EJ1V0DS00
2SK3367
PACKAGE DRAWINGS (Unit
TO-251 (MP-3) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
1.6±0.2
5.5±0.2
13.7 MIN.
MAX.
1.1±0.2
+0.2
0.5-0.1
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode
Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Data Sheet D14257EJ1V0DS00
1.1±0.2
MIN.
5.5±0.2 10.0 MAX.
MIN. TYP.
2SK3367
[MEMO]
Data Sheet D14257EJ1V0DS00
2SK3367
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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