2SK3353 ORDERING INFORMATION PART NUMBER 2SK3353 2SK3353-S 2

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2SK3353 ORDERING INFORMATION PART NUMBER 2SK3353 2SK3353-S 2

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FIELD EFFECT TRANSISTOR
2SK3353
ORDERING INFORMATION
PART NUMBER 2SK3353 2SK3353-S 2SK3353-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
2SK3353 N-channel Field Effect Transistor designed high current switching applications.
FEATURES
Super on-state resistance: RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Built-in gate protection diode
Ciss: Ciss 4650 TYP.
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage Gate Source Voltage Drain Current (DC) VDSS VGSS(AC) ID(DC)
Note1
±328 +150
Drain Current (pulse)
ID(pulse) Tstg
Note2 Note2
Total Power Dissipation 25°C)
Total Power Dissipation 25°C) Channel Temperature Storage Temperature
Single Avalanche Current Single Avalanche Energy
Notes Duty cycle Starting
THERMAL RESISTANCE
Channel Case
Channel Ambient Rth(ch-C) Rth(ch-A) 1.32 83.3 °C/W °C/W
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14130EJ1V0DS00 (1st edition) Date Published June 1999 CP(K) Printed Japan
mark shows major revised points.
1999
2SK3353
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs VGS(on) TEST CONDITIONS 4650 1550 MIN. TYP. 10.5 MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14130EJ1V0DS00
2SK3353
PACKAGE DRAWING (Unit:
TO-220AB (MP-25) TO-262 (MP-25 Cut)
3.0±0.3
10.6 MAX. 10.0
MAX.
1.0±0.5
3.6±0.2
MIN.
1.3±0.2 (10)
MAX. 1.3±0.2
15.5 MAX.
MAX.
12.7 MIN.
1.3±0.2
1.3±0.2
12.7 MIN.
8.5±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
TO-220SMD (MP-25Z)
(10)
MAX. 1.3±0.2
EQUIVALENT CIRCUIT
Drain
1.0±0.5
8.5±0.2
Gate
Body Diode
1.4±0.2 1.0±0.3 2.54 TYP.
11±0.4
3.0±0.5
0.5±0.2
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
Gate Protection Diode
Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
2.8±0.2
Data Sheet D14130EJ1V0DS00
2SK3353
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

2SK3353 ORDERING INFORMATION PART NUMBER 2SK3353 2SK3353-S 2

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