The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.    


Datasheet Search Engine   
 
Part # or Description: • 5V RS232 Driver • 2SC5066* • "Real Time Clock" • "USB connector" • "blue led" 5mm • 10 watt zener diode • 2N3055* motorola
 
Search Tip: Try entering the part number only. Include a wildcard (eg. lm317* or 1n4148*)

 

 

2SK3225 ORDERING INFORMATION PART NUMBER 2SK3225 2SK3225-Z P


Datasheet Thumbnail

  

Download PDF



Top Searches for this datasheet



FIELD EFFECT TRANSISTOR
2SK3225
ORDERING INFORMATION
PART NUMBER 2SK3225 2SK3225-Z PACKAGE TO-251 TO-252
DESCRIPTION
This product N-Channel Field Effect Transistor designed high current switching applications.
FEATURES
On-State Resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss Ciss 2100 TYP. Built-in Gate Protection Diode TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) Tstg
+20, ±136 +150
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Note Duty cycle
THERMAL RESISTANCE
Channel Case Channel Ambient Rth(ch-C) Rth(ch-A) 3.13 °C/W °C/W
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D13798EJ1V0DS00 (1st edition) Date Published 1999 CP(K) Printed Japan
1998,1999
2SK3225
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) VGS(on) di/dt A/µs 2100 0.94 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D13798EJ1V0DS00
2SK3225
PACKAGE DRAWINGS (Unit
1)TO-251 (MP-3) 2)TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
1.6±0.2
5.5±0.2
13.7 MIN.
MIN.
1.1±0.2
+0.2
0.5-0.1
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
1.1±0.2
MAX.
5.5±0.2 10.0 MAX.
MIN. 1.8TYP.
Data Sheet D13798EJ1V0DS00
2SK3225
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

Other recent searches


TB1254N - TB1254N   TB1254N Datasheet
RHP-250+ - RHP-250+   RHP-250+ Datasheet
PDC-10-6-75 - PDC-10-6-75   PDC-10-6-75 Datasheet
MD563X-HaM - MD563X-HaM   MD563X-HaM Datasheet
M51998P - M51998P   M51998P Datasheet
ISL88731C - ISL88731C   ISL88731C Datasheet
ICX068AKB - ICX068AKB   ICX068AKB Datasheet
74LCX14 - 74LCX14   74LCX14 Datasheet

 

Privacy Policy | Disclaimer
© 2012 Datasheet Archive