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2SK3225 ORDERING INFORMATION PART NUMBER 2SK3225 2SK3225-Z P
Top Searches for this datasheetFIELD EFFECT TRANSISTOR 2SK3225 ORDERING INFORMATION PART NUMBER 2SK3225 2SK3225-Z PACKAGE TO-251 TO-252 DESCRIPTION This product N-Channel Field Effect Transistor designed high current switching applications. FEATURES On-State Resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss Ciss 2100 TYP. Built-in Gate Protection Diode TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS Drain Source Voltage Gate Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) Tstg +20, ±136 +150 Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Note Duty cycle THERMAL RESISTANCE Channel Case Channel Ambient Rth(ch-C) Rth(ch-A) 3.13 °C/W °C/W information this document subject change without notice. Before using this document, please confirm that this latest version. devices/types available every country. Please check with local representative availability additional information. Document D13798EJ1V0DS00 (1st edition) Date Published 1999 CP(K) Printed Japan 1998,1999 2SK3225 ELECTRICAL CHARACTERISTICS CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) VGS(on) di/dt A/µs 2100 0.94 MIN. TYP. MAX. UNIT TEST CIRCUIT AVALANCHE CAPABILITY D.U.T. TEST CIRCUIT SWITCHING TIME D.U.T. Wave Form VGS(on) BVDSS Duty Cycle Wave Form td(on) td(off) toff Starting TEST CIRCUIT GATE CHARGE D.U.T. Data Sheet D13798EJ1V0DS00 2SK3225 PACKAGE DRAWINGS (Unit 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 1.5-0.1 +0.2 6.5±0.2 5.0±0.2 2.3±0.2 0.5±0.1 MAX. 6.5±0.2 5.0±0.2 1.5-0.1 +0.2 2.3±0.2 0.5±0.1 1.6±0.2 5.5±0.2 13.7 MIN. MIN. 1.1±0.2 +0.2 0.5-0.1 0.5-0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) +0.2 MAX. MAX. Gate Drain Source (Drain) EQUIVALENT CIRCUIT Drain 0.75 Gate Body Diode Gate Protection Diode Source Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device. 1.1±0.2 MAX. 5.5±0.2 10.0 MAX. MIN. 1.8TYP. Data Sheet D13798EJ1V0DS00 2SK3225 information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. 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