Features High Speed Switching On-Resistance Secondary Breakdown D

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Features High Speed Switching On-Resistance Secondary Breakdown D

Datasheet Thumbnail

Top Searches for this datasheet

2SK2071-01L,S
Features
High Speed Switching On-Resistance Secondary Breakdown Driving Power High Voltage Guarantee Avalanche Proof
N-channel MOS-FET
600V
Outline Drawing
Applications
Switching Regulators DC-DC converters General Purpose Power Amplifier
Maximum Ratings Characteristics
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating Storage Temperature Range Symbol D(puls) Rating +150 Unit
Equivalent Circuit
Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol (BR)DSS GS(th)
DS(on) d(on) d(off)
Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1A VGS=10V ID=1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=2A VGS=10V RGS=25 Tch=25°C 100µH
Min.
Typ.
Max. 1,41
IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
0,92
Unit
Thermal Characteristics Item Thermal Resistance
Symbol th(ch-a) th(ch-c)
Test conditions channel channel case
Min.
Typ.
Max. 6,25
Unit °C/W °C/W
Collmer Semiconductor, Inc. P.O. 702708 Dallas, 75370 972-233-1589 972-233-0481 http://www.collmer.com
N-channel MOS-FET
600V
2SK2071-01L,S
Drain-Source-On-State Resistance Typical Transfer Characteristics
Characteristics
Typical Output Characteristics
RDS(ON)
[°C]
Typical
Typical Forward Transconductance
Gate Threshold Voltage
RDS(ON)
VGS(th)
[°C]
Typical Capacitance
Typical Input Charge
Forward Characteristics Reverse Diode
[nF]
[nC]
Allowable Power Dissipation
Safe operation area
Zth(ch-c) [K/W]
Transient Thermal impedance
[°C]
This specification subject change without notice!

Features High Speed Switching On-Resistance Secondary Breakdown D

Top Searches for this datasheet

Other recent searches