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Order this document 2N6282/D Darlington Complementary Silicon Pow
Top Searches for this datasheetOrder this document 2N6282/D Darlington Complementary Silicon Power Transistors designed general-purpose amplifier low-frequency switching applications. High Current Gain 2400 (Typ) 2N6282, 2N6283, 2N6284 4000 (Typ) 2N6285, 2N6286, 2N6287 Collector-Emitter Sustaining Voltage VCEO(sus) (Min) 2N6282, 2N6285 VCEO(sus) (Min) 2N6283, 2N6286 VCEO(sus) (Min) 2N6284, 2N6287 Monolithic Construction with Built-In Base-Emitter Shunt Resistors *MAXIMUM RATINGS Rating 2N6282 thru 2N6284* 2N6285 thru 2N6287* *Motorola Preferred Device POWER DISSIPATION (WATTS) Symbol VCEO 2N6282 2N6285 2N6283 2N6286 2N6284 2N6287 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Device Dissipation 25_C Derate above 25_C Operating Storage Junction Temperature Range 0.915 Watts W/_C TJ,Tstg DARLINGTON AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS WATTS *THERMAL CHARACTERISTICS Characteristic CASE 1-07 TO-204AA (TO-3) Symbol Unit Thermal Resistance, Junction Case 1.09 _C/W Indicates JEDEC Registered Data. CASE TEMPERATURE (°C) Figure Power Derating Preferred devices Motorola recommended choices future best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 2N6282 thru 2N6284 2N6285 thru 2N6287 Indicates JEDEC Registered Data. Pulse test: Pulse Width Duty Cycle *ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS APPROX VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE MSD6100 USED BELOW APPROX Small-Signal Current Gain Adc, Vdc, kHz) Output Capacitance (VCB Vdc, MHz) Magnitude Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio Adc, Vdc, MHz) Base-Emitter Saturation Voltage Adc, mAdc) Base-Emitter Voltage Adc, Vdc) Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Current Gain Adc, Vdc) Adc, Vdc) Emitter Cutoff Current (VBE Vdc, Collector Cutoff Current (VCE Rated VCB, VBE(off) Vdc) (VCE Rated VCB, VBE(off) Vdc, 150_C) Collector Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc, Collector-Emitter Sustaining Voltage Adc, DUTY CYCLE 1.0% Figure Switching Times Test Circuit DISCONNECTED TEST CIRCUIT REVERSE POLARITIES Characteristic SCOPE 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 2N6282,83,84 2N6285,86,87 VBE(off) 25°C COLLECTOR CURRENT (AMP) Motorola Bipolar Power Transistor Device Data VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Figure Switching Times TIME ICEO IEBO ICEX |hfe| 2N6282/84 (NPN) 2N6285/87 (PNP) 18,000 mAdc mAdc mAdc Unit 2N6282 thru 2N6284 2N6285 thru 2N6287 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.01 0.05 0.02 RJC(t) r(t) 1.09°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) TIME PULSE WIDTH (ms) P(pk) DUTY CYCLE, t1/t2 1000 Figure Thermal Response ACTIVE-REGION SAFE OPERATING AREA COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) 0.05 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE 200°C 0.05 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE COLLECTOR CURRENT (AMP) 0.05 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE 200°C 200°C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2N6282, 2N6285 Figure 2N6283, 2N6286 Figure 2N6284, 2N6287 There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e. transistor must subjected greater dissipation than curves indicate. data Figures based TJ(pk) 200_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 200_C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 2N6282/84 (NPN) 2N6285/87 (PNP) FREQUENCY (kHz) 1000 2N6282/84 (NPN) 2N6285/87 (PNP) REVERSE VOLTAGE (VOLTS) 25°C 1000 25°C CAPACITANCE (PF) Figure Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data Figure Capacitance 2N6282 thru 2N6284 2N6285 thru 2N6287 2N6282, 2N6283, 2N6284 20,000 10,000 hFE, CURRENT GAIN hFE, CURRENT GAIN 7000 5000 3000 2000 1000 150°C 10,000 7000 5000 25°C 3000 2000 1000 55°C 30,000 20,000 2N6285, 2N6286, 2N6287 150°C 25°C 55°C COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) Figure Current Gain COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C BASE CURRENT (mA) BASE CURRENT (mA) Figure Collector Saturation Region 25°C VOLTAGE (VOLTS) VOLTAGE (VOLTS) 25°C VBE(sat) IC/IB VBE(sat) IC/IB VCE(sat) IC/IB VCE(sat) IC/IB COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) Figure "On" Voltages Motorola Bipolar Power Transistor Device Data 2N6282 thru 2N6284 2N6285 thru 2N6287 2N6282, 2N6283, 2N6284 TEMPERATURE COEFFICIENTS (mV/°C) TEMPERATURE COEFFICIENTS (mV/°C) 25°C 150°C 55°C 25°C VCE(sat) 55°C 25°C *APPLIES IC/IB 2N6285, 2N6286, 2N6287 25°C 150°C 55°C 25°C VCE(sat) *APPLIES IC/IB 25°C 150°C 25°C 150°C 55°C 25°C COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) Figure Temperature Coefficients COLLECTOR CURRENT COLLECTOR CURRENT 150°C 100°C REVERSE 25°C 10-1 FORWARD 10-1 REVERSE 10-2 10-3 25°C FORWARD 100°C 150°C VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure Collector Cut-Off Region 2N6282 2N6283 2N6284 COLLECTOR 2N6285 2N6286 2N6287 COLLECTOR BASE BASE EMITTER EMITTER Figure Darlington Schematic Motorola Bipolar Power Transistor Device Data 2N6282 thru 2N6284 2N6285 thru 2N6287 PACKAGE DIMENSIONS SEATING PLANE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) 0.13 (0.005) INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188 MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77 STYLE BASE EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer. reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298 Motorola Bipolar Power Transistor Device Data *2N6282/D* 2N6282/D Other recent searchesPS2525-1 - PS2525-1 PS2525-1 Datasheet PS2525L-1 - PS2525L-1 PS2525L-1 Datasheet LS150 - LS150 LS150 Datasheet PA579-01-01A - PA579-01-01A PA579-01-01A Datasheet LM883 - LM883 LM883 Datasheet EA40QC06-F - EA40QC06-F EA40QC06-F Datasheet CDP1851 - CDP1851 CDP1851 Datasheet CDP1851C - CDP1851C CDP1851C Datasheet B45006B107 - B45006B107 B45006B107 Datasheet 2N3739 - 2N3739 2N3739 Datasheet
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