COMPLEMENTARY SILICON HIGH POWER TRANSISTORS SGS-THOMSON PREFERRE

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COMPLEMENTARY SILICON HIGH POWER TRANSISTORS SGS-THOMSON PREFERRE

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2N5884 2N5886
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY DEVICES HIGH CURRENT CAPABILITY
APPLICATIONS GENERAL PURPOSE SWITCHING AMPLIFIER LINEAR SWITCHING INDUSTRIAL EQUIPMENT
TO-3
DESCRIPTION 2N5884 2N5886 complementary silicon power transistor Jedec TO-3 metal case inteded power linear amplifiers switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Dissipation Storage Temperature Max. Operating Junction Temperature Value 2N5884 2N5886
Unit
types voltage current values negative.
June 1997
2N5884 2N5886
THERMAL DATA
thj-case Thermal Resistance Junction-case 0.875
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current -1.5V) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Test Conditions rated rated rated 6.25 6.25 1KHz 1MHz 1000
Min.
Typ.
Max.
Unit
CEO(sus) Collector-Emitter Sustaining Voltage CE(sat) BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain
Small Signal Current Gain Transition frequency Collector Base Capacitance Rise Time Storage Time Fall Time
type type -IB2
Pulsed: Pulse duration duty cycle
2N5884 2N5886
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
2N5884 2N5886
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS SGS-THOMSON PREFERRE

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