Silicon Transistor General purpose amplifier High voltage applica
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2N5401
Silicon Transistor
General purpose amplifier High voltage application
Features
High collector breakdown voltage VCBO -160V, VCEO -150V collector saturation voltage VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551
Ordering Information
Type 2N5401 Marking 2N5401 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
Connections Emitter Base Collector
1.20±0.1
0.38
KST-9040-000
2N5401
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO Tstg
Ratings
-160 -150 -600 -55~150
Unit
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current current gain current gain current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)(1) VBE(sat)(1)
Test Condition
IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-160 -150 -0.2 -0.5 -100 -100
Unit
VCE(sat)(2)*
VBE(sat)(2)*
Pulse Tester Pulse Width 300µs, Duty Cycle 2.0%
KST-9040-000
2N5401
Electrical Characteristic Curves
Fig. PC-Ta Fig.
Fig.
Fig. VCE(sat), VBE(sat)
Fig.
KST-9040-000
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