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Switching Transistors Si-Epitaxial PlanarTransistors Power dissip


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2N3905, 2N3906
Switching Transistors Si-Epitaxial PlanarTransistors
Power dissipation Verlustleistung Plastic case Weight approx. Gewicht Plastic material classification 94V-0 UL94V-0 klassifiziert
Standard Pinning
TO-92 (10D3) 0.18
Standard packaging taped ammo pack Standard Lieferform gegurtet Ammo-Pack
Maximum ratings 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation Verlustleistung Collector current Kollektorstrom (dc) Peak collector current Kollektorspitzenstrom Junction temp. Sperrschichttemperatur Storage temperature Lagerungstemperatur open open open VCE0 VCE0 VEB0 Ptot
Grenzwerte 25/C) 2N3905, 2N3906 150/C 55.+ 150/C
Characteristics 25/C) Min. Collector saturation volt. Collector cutoff current Kollektorreststrom Emitter cutoff current Emitterreststrom IEBV ICEV VCEsat VCEsat VBEsat VBEsat
Kennwerte 25/C) Typ. Max.
Base saturation voltage
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden
General Purpose Transistors
2N3905, 2N3906
Characteristics 25/C) Min. current gain 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 CCB0 CEB0 toff RthA
Kennwerte 25/C) Typ. Max. 2N3903, 2N3904
Gain-Bandwidth Product Transitfrequenz
Collector-Base Capacitance Noise figure Rauschzahl 2N3905 .15.7 2N3906 Switching times Schaltzeiten turn-on time turn-off time ICon IBon IBoff Emitter-Base Capacitance
Thermal resistance junction ambient Sperrschicht umgebende Luft Recommended complementary transistors Empfohlene NPN-Transistoren
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden

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