Switching Transistors Si-Epitaxial PlanarTransistors Power dissip
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2N3903, 2N3904
Switching Transistors Si-Epitaxial PlanarTransistors
Power dissipation Verlustleistung Plastic case Weight approx. Gewicht Plastic material classification 94V-0 UL94V-0 klassifiziert
Standard Pinning
TO-92 (10D3) 0.18
Standard packaging taped ammo pack Standard Lieferform gegurtet Ammo-Pack
Maximum ratings 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation Verlustleistung Collector current Kollektorstrom (dc) Junction temp. Sperrschichttemperatur Storage temperature Lagerungstemperatur open open open VCE0 VCE0 VEB0 Ptot
Grenzwerte 25/C) 2N3903, 2N3904 150/C 55.+ 150/C
Characteristics 25/C) Min. Collector saturation volt. Collector cutoff current Kollektorreststrom Emitter cutoff current Emitterreststrom IEBV ICEV VCEsat VCEsat VBEsat VBEsat
Kennwerte 25/C) Typ. Max.
Base saturation voltage
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden
General Purpose Transistors
2N3903, 2N3904
Characteristics 25/C) Min. current gain 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 CCB0 CEB0 toff RthA
Kennwerte 25/C) Typ. Max. 2N3905, 2N3906
Gain-Bandwidth Product Transitfrequenz Noise figure Rauschzahl 2N3903 .15.7 2N3904 Switching times Schaltzeiten turn-on time turn-off time ICon IBon IBoff
Collector-Base Capacitance Emitter-Base Capacitance
Thermal resistance junction ambient Sperrschicht umgebende Luft Recommended complementary transistors Empfohlene PNP-Transistoren
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden
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