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2N3866; 2N4427 Silicon planar epitaxial overlay transistors Produ


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2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data August 1986 File under Discrete Semiconductors, SC08a 1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
DESCRIPTION overlay transistors TO-39 metal packages with collector connected case. devices primarily intended class-A, amplifiers, frequency multiplier oscillator circuits. PINNING TO-39/1 emitter base collector
handbook, halfpage
2N3866; 2N4427
APPLICATIONS transistors intended output, driver pre-driver stages equipment.
DESCRIPTION
MBB199
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL VCER 2N3866 2N4427 VCEO collector-emitter voltage 2N3866 2N4427 VEBO emitter-base voltage 2N3866 2N4427 IC(AV) Ptot performance TYPE NUMBER 2N3866 2N4427 (MHz) (dB) collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over period open collector open base PARAMETER collector-emitter voltage CONDITIONS MIN. MAX. UNIT
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage 2N3866 2N4427 VCER collector-emitter voltage 2N3866 2N4427 VCEO collector-emitter voltage 2N3866 2N4427 VEBO emitter-base voltage 2N3866 2N4427 IC(AV) Ptot Tstg collector current (DC) average collector current collector current peak value total power dissipation storage temperature junction temperature measured over period open collector open base CONDITIONS open emitter
2N3866; 2N4427
MIN.
MAX. +200
UNIT
THERMAL CHARACTERISTICS SYMBOL j-mb mb-h PARAMETER thermal resistance from junction ambient free thermal resistance from junction mounting base thermal resistance from mounting base heatsink note note CONDITIONS VALUE UNIT
Notes Mounted with clamping washer 56218. Mounted with clamping washer 56218 boron nitride washer electrical insulation.
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
2N3866; 2N4427
MGC589
handbook, halfpage
handbook, halfpage
MGC590
Ptot
(oC)
2N4427. 2N3866.
Fig.2 SOAR.
Fig.3 Power derating curve.
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)CBO 2N3866 2N4427 V(BR)CEO collector-emitter breakdown voltage 2N3866 2N4427 V(BR)CER collector-emitter breakdown voltage 2N3866 2N4427 V(BR)EBO emitter-base breakdown voltage 2N3866 2N4427 VCEsat collector-emitter saturation voltage 2N3866 2N4427 ICEO collector leakage current 2N3866 2N4427 current gain 2N3866 2N3866 2N4427 2N4427 transition frequency collector capacitance 2N3866 2N4427 APPLICATION INFORMATION Table performance (MHz) 2N4427 (dB) open base; open base; open collector; open base; PARAMETER collector-base breakdown voltage CONDITIONS open emitter;
2N3866; 2N4427
MIN.
MAX.
UNIT
TYPE NUMBER 2N3866
(mA) <107 <107 <167
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
Ruggedness
2N3866; 2N4427
transistors capable withstanding load mismatch corresponding VSWR varied through phases, under conditions mentioned Table
handbook, full pagewidth
input
output
MGC941
Fig.4 Test circuit 2N3866 MHz.
List components (see Fig.4) COMPONENT DESCRIPTION trimmer capacitor trimmer capacitor feed-through capacitor capacitor capacitor resistor resistor turns copper wire VALUE int. diameter winding pitch 4312 36690 int. diameter int. diameter winding pitch leads DIMENSIONS CATALOGUE
Ferroxcube choke coil turns enamelled copper wire turns copper wire
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
2N3866; 2N4427
handbook, full pagewidth
input
output
MGC940
length external emitter wire
Fig.5 Test circuit 2N4427 MHz.
List components (see Fig.5) COMPONENT DESCRIPTION trimmer capacitor feed-through capacitor capacitor resistor turns copper wire int. diameter winding pitch leads 4312 36640 int. diameter winding pitch leads int. diameter winding pitch leads VALUE DIMENSIONS CATALOGUE
Ferroxcube choke coil turns copper wire turns copper wire
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
PACKAGE OUTLINE
2N3866; 2N4427
handbook, full pagewidth
0.86
5.08 12.7
MSA241
0.51
Dimensions
Fig.6 TO-39.
1995
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
2N3866; 2N4427
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

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