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Bulletin I2115 16TTS. SERIES PHASE CONTROL Description/


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Bulletin I2115
16TTS. SERIES
PHASE CONTROL
Description/Features
16TTS. series silicon controlled rectifiers specifically designed medium power switching phase control applications. glass passivation technology used reliable operation 125° junction temperature. Typical applications input rectification (soft start) these products designed used with International Rectifier input diodes, switches output rectifiers which available identical package outlines.
<1.4V 200A
ITSM
1200V
Output Current Typical Applications Applications
Capacitive input filter 55°C,TJ 125°C, common heatsink 1°C/W
Single-phase Bridge
13.5
Three-phase Bridge Units
Major Ratings Characteristics Characteristics
IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM dv/dt di/dt 25°C 1200 V/µs A/µs Also available SMD-220 package (series 16TTS.S)
16TTS.S
Units
TO-220AC
Order
16TTS. Series
Voltage Ratings
VRRM, maximum Part Number peak reverse voltage
1200
VDRM maximum peak direct voltage
1200
IRRM/IDRM 125°C
16TTS08 16TTS12
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current IRMS Max. On-state Current ITSM Max. Peak Cycle Non-Repetitive Surge Current Max. fusing
16TTS.
Units
Conditions
duty cycle sinusoidal wave form
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, voltage reapplied V/µs A/µs rated VRRM/ VDRM 10ms, voltage reapplied 10A, 25°C 125°C
Max. fusing Max. On-state Voltage Drop On-state slope resistance
2000 24.0
VT(TO) Threshold Voltage IRM/IDM Max.Reverse Direct Leakage Current Max. Holding Current Max. Latching Current
Anode Supply Resistive load, Initial IT=1A Anode Supply Resistive load
dv/dt Max. rate rise off-state Voltage di/dt Max. rate rise turned-on Current
Order
16TTS. Series
Triggering
Parameters
Max. peak Gate Power PG(AV) Max. average Gate Power Max. paek positive Gate Current Max. paek negative Gate Voltage Max. required Gate Current trigger
16TTS.
Units
Conditions
Anode supply resistive load, 65°C Anode supply resistive load, 25°C Anode supply resistive load, 125°C Anode supply resistive load, 65°C Anode supply resistive load, 25°C Anode supply resistive load, 125°C 125°C, VDRM rated value 125°C, VDRM rated value
Max. required Gate Voltage trigger
Max. Gate Voltage trigger Max. Gate Current trigger
Switching
Parameters
Typical turn-on time Typical reverse recovery time Typical turn-off time
16TTS.
Units
25°C 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
Max. Junction Temperature Range Max. Storage Temperature Range
16TTS.
(0.07) Min. Max. (10)
Units
Conditions
RthJC Max. Thermal Resistance Junction Case RthJA Max. Thermal Resistance Junction Ambient RthCS Typ. Thermal Resistance Case Ambient Approximate Weight Mounting Torque
°C/W
operation
Mounting surface, smooth greased (oz.) Kg-cm (Ibf-in)
Case Style
TO-220AC
Order
16TTS. Series
Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C)
uction
16TTS. Series (DC)
16TTS. Series thJC (DC)
120° 180°
Conduction Period
120° 180°
Average On-state Current
Average On-state Current
Fig. Current Rating Characteristics
Maximum Average state Power Loss Maximum Average On-state Power Loss
Fig. Current Rating Characteristics
180° 120° Limit
Conduction Angle
180° 120°
Limit
Conduction Period
16TTS. 125°C
16TTS. 125°C
Average On-state Current
Average On-state Current
Fig. On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current
Rated Load Condition With Rated Applied Following Surge.
Fig. On-state Power Loss Characteristics
Peak Half Sine Wave Forward Current 16TTS. Series
Maximum Repetitive Surge Current Versus Pulse Train Duration.
Initial 125°C 0.0083 0.0100
Initial 125°C Voltage Reapplied Rated Reapplied
16TTS.Series
0.01
Number Equal Amplitude Half Cycle Current Pulses
Pulse Train Duration
Fig. Maximum Non-Repetitive Surge Current
Fig. Maximum Non-Repetitive Surge Current
Order
16TTS. Series
1000 Instantaneous On-state Current
25°C 125°C
16TTS. Series
Instantaneous On-state Voltage
Fig. On-state Voltage Drop Characteristics
Instantaneous Gate Voltage
Rectangular gate pulse a)Recommended load line rated di/dt: ohms b)Recommended load line rated di/dt: ohms
0.001 0.01
16TTS.
Frequency Limited PG(AV)
Instantaneous Gate Current
Fig. Gate Characteristics
Tran sient Thermal Impedance thJC (K/W) 0.50 0.33 0.25 0.17 0.08 Steady State Value Operation)
Single Pulse 16TTS. Series
0.0001
0.001
Square Wave Pulse Duration
Fig. Thermal Impedance ZthJC Characteristics
Order
16TTS. Series
Outline Table
10.54 (0.41)
1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 6.48 (0.25) 6.23 (0.24) 1.22 (0.05)
MAX.
15.24 (0.60) 14.84 (0.58)
2.92 (0.11) 2.54 (0.10) TERM
14.09 (0.55) 13.47 (0.53)
3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004)
1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03)
2.89 (0.11) 2.84 (0.10)
4.57 (0.18) 4.32 (0.17)
0.61 (0.02) MAX.
Dimensions millimeters (and inches)
5.08 (0.20) REF.
Ordering Information Table
Device Code
Current Rating, value Circuit Configuration Single Thyristor Package TO-220AC Type Silicon Converter Grade Voltage code: Code VRRM 800V 1200V
Order

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